T160 Search Results

18FX6

Abstract: TO103 T1601 I960 Scans-0017322 general electric
Contextual Info: 18FX6 18FX6 ET-T1601 Page 1 3 -6 0 HEPTODE FOR PENTAGRID CONVERTER APPLICATIONS TUBES DESCRIPTION AND RATING The 18F X 6 is a miniature heptode designed to perform the combined func­ tions of the mixer and oscillator in line-operated superheterodyne radio

Contextual Info: EUPEC S2E » • BMGBET? 00G07QL, 314 « U P E C T160N 7 ^ 5 ' / ? Typenrelhe/Type range T 160 N Elektrische Eigenschaften Electrical properties Vdrm. Vrrm Periodische Vorwärts- und Rückwärts-S pitzensperrspannung Effektiver Ourchlaßstrom Itrmsm Dauergrenzstrom

74HC

Abstract: 74HCT
Contextual Info: P C 74H C /H C T160 MSI PR E SE TTA B LE S Y N C H R O N O U S BCD D E C A D E C O U N T E R ; A S Y N C H R O N O U S RESET TYP IC A L F E A TU R E S • • • • • • Synchronous counting and loading Tw o count enable inputs fo r n-bit cascading Positive-edge triggered clock

M5M29GB160BVP

Abstract: M5M29GT160BVP
Contextual Info: MITSUBISHI LSIs T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT /1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The M ITSUBISHI Mobile FLASH M 5M 29G B/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Mem ories with

Contextual Info: MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with

LCD 1602L

Contextual Info: HOLTEK r r H T1602L 40 Dot Matrix LCD Segment Driver Features • • • O perating voltage: 2.7V~5.5V LCD driving voltage: 3.0V~5.2V A pplicable LC D duty from 1/8 to 1/16 • • S u itab le for v ariou s LC D panel B ia s voltage ad ju stab le from external

tube 6c4

Abstract: 6c4 tube TRIODE 6C4 TL604 I960 rs tube general electric
Contextual Info: jam 6C4 6C4 ET-T1604 Page 1 3-6 0 TRIODE TUBES DESCRIPTION A N D RAT IN G 1 BASING DIAG RAM T h e 6 C 4 is a m in ia tu re , m e d iu m -m u trio d e su ita b le fo r use in a w id e v a r ie t y o f g e n e ra l-p u rp o se a p p lica tio n s. I t is e sp e c ia lly u se fu l a s a lo ca l o scilla to r in

Contextual Info: MITSUBISHI LSIs M6MGB/T160S2BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES

Contextual Info: WESTCODE An Date:- 11 July, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: MITSUBISHI LSIs p r e l im in a r y M 5 M 2 9 J B / T 1 6 0 A V P - 8 0 ,J- 1 0 Som e { 16,777,216-BIT 2,097,152-WORD BY 8-BIT /1,048,576-WORD BY16-BIT _CMOS 5.0V-ONLY. BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI M 5M 29JB/T160A

Contextual Info: High-Reliability High-Speed CMOS Logic ICs CD54HC160/3A T160/3A Burn-ln Test-Circuit Connections Static OPEN CD54HC/T160 Dynamic C D 54H C /H C T160 Use Static II for /3A burn-in and Dynamic fo r Life Test. STATIC BURN-IN 1 GROUND Vcc (6V) STATIC BURN-IN II

Thyristor t1601n

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T1601N Key Parameters enndaten VDRM / VRRM 3200V … 3600V ITAVM 1900A TC=85°C ITSM vT0 44000A 3570A (TC=55°C) 1,0V rT 0,25mΩ RthJC 9,0K/kW Clamping Force 36 … 52kN

t160s4

Contextual Info: MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES

18Fw6

Abstract: tD105 I960 ET-TT606 ET-T1606 Scans-0017322 general electric
Contextual Info: 18FW6 ET-T1606 Page 1 18FW6 3-60 PENTODE TUBES . -. - DESCRIPTION AND RATING The 18FW6 is a miniature, semi-remote-cutoff pentode designed for RF and IF amplifier service in line-operated radio receivers having 100-milliampere, series-connected heaters.

Contextual Info: MITSUBISHI LSIs p r e l im in a r y n o t a fin a i s ^ J ^ M5M29FB/T160A VP,RV-80,-10,-81 nc h a n g e . 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1 ,048,576-WORD BY16-BIT S o m e p a r a m e t r i c lim itó a r e CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

62H01

Contextual Info: MITSUBISHI LSIs Y ELIMINAR PR tion. al specifica is is not a fin change. Notice : Th e subject to ar its lim ric et m ra pa e Som M5M29FB/T160AVP,RV-80,-10,-8I 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1,048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY

Contextual Info: MITSUBISHI LSIs M6MGB/T160S4BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144WORD BY 16-BIT / 524,288-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES

6EW6

Abstract: T1605 tubes 15EW6 Scans-0017302
Contextual Info: 15EW6 ET-T1605 Page 1 15EW6 TUBES DESCRIPTION AND RATING 15EW6 Pentode. Identical to the 6EW6 except for the following ratings: Cathode—Coated Unipotential Heater Voltage, AC or D C .15.0 ± 10%

Contextual Info: SMTPowerInductors-T1608 Series The Coilcraft D T1608 Series represents the ultimate in cost-effective, miniature power inductors. The materials used in the DT Series provide natural heat sinking. This allows these parts to be used at relatively large currents.

T1600GB45G

Abstract: T1600 IC 7418 datasheet transistor polar D-68623 ixys application note igbt 3 KA transistor 1GE
Contextual Info: WESTCODE An Date:- 3 Dec, 2010 Data Sheet Issue:- 1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

Contextual Info: MITSUBISHI LSIs M6MGB/T160S2BVP 16,777,216-BIT 1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT CMOS 3.3V-ONLY FLASH MEMORY & 2,097,152-BIT (131,072-WORD BY 16-BIT / 262,144-WORD BY 8-BIT) CMOS SRAM Stacked-MCP (Multi Chip Package) DESCRIPTION FEATURES

D8000H-DFFFFH

Abstract: FE000H-FFFFFH T160A
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs Y ELIMINAR PR tion. al specifica is is not a fin change. Notice : Th e subject to ar its lim ric et m ra pa e Som M5M29JB/T160AVP-80,-10 M5M29JB/T160AVP-80,-10 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1,048,576-WORD BY16-BIT

T1600GB

Abstract: D-68623 T1600
Contextual Info: WESTCODE An Date:- 11 July, 2011 Data Sheet Issue:- A1 IXYS Company Advance Data Insulated Gate Bi-Polar Transistor Type T1600GB45G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

M5M29GB160BVP

Abstract: M5M29GT160BVP
Contextual Info: MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT 2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPTION The MITSUBISHI Mobile FLASH M5M29GB/T160BVP are 3.3V-only high speed 16,777,216-bit CMOS boot block Flash Memories with