2N5555 Search Results

2n5248

Abstract: PF5101 2N5248 equivalent 2N5247 PN4857 PN4858 U1897 2N5245 PF5301-2 2N5460
Contextual Info: Discrete POWER & Signal Technologies N-Channel JFETs Switches / Choppers BVGSS BVGDO V @ IG µA) Min (µ IGSS *IDGO (nA) @ VDG Max (V) ID(off) V (nA) @ V DS GS Max (V) (V) VP ID (V) @ VDS (nA) Min Max (V) Device No. Case Style 2N5555 2N5638 2N5639 2N5640

2n5555

Abstract: 2N5555-D
Contextual Info: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10

2N5555

Abstract: 2N5555 equivalent S129 S219 S229 OPF-L 2N55551
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by 2N55551D DATA JFET Switching N-Channel — Depletion 2N5555 1 DRAIN I 3 GATE @ i 2 SOURCE MHIMUM 1 RATINGS Rating Drain–Source Drain–Gate Symbol Value Unit VDS 25 Vdc Voltage Voltage VDG 25 Vdc Voltage

Diode Gfg 6f

Abstract: 2N5555 2N5555 equivalent
Contextual Info: MOTOROLA Order this document by 2N5555/D SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage

2N5555

Abstract: 2n5555 Vgs(off)
Contextual Info: 2N5555 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted

2n5555 Vgs(off)

Abstract: 2N5555 CS 150 10v
Contextual Info: 2N5555 ♦I N-CHANNEL FET JEDEC TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5555 type is an Silicon N Channel Junction FET designed for switching, RF amplifier and mixer applications where low capacitance is desired. MAXIMUM RA T I N G S Tfl=25°C unless otherwise noted

2N5555

Abstract: 2n5555 datasheet 2n5555 Vgs(off)
Contextual Info: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10

Contextual Info: 2N5555 N-Channel RF Amplifier • This device is designed primarily for electronic switching applications such as low on resistance analog switching. • Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25°C unless otherwise noted

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N–Channel — Depletion 2N5555 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Drain – Gate Voltage VDG 25 Vdc Gate – Source Voltage VGS 25 Vdc

2n5555

Contextual Info: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10

2N5555

Abstract: 2N5555 equivalent 2N555
Contextual Info: MOTOROLA Order this document by 2N5555/D SEMICONDUCTOR TECHNICAL DATA JFET S w itching N-Channel — Depletion 1 DRAIN MAXIMUM RATINGS Rating Drain-Source Voltage Symbol Value Unit Vd S 25 Vdc Drain-Gate Voltage VdG 25 Vdc Gate-Source Voltage VGS 25 Vdc Forward Gate Current

2N5555

Contextual Info: ON Semiconductort 1 DRAIN JFET Switching 2N5555 3 GATE N–Channel — Depletion 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Drain–Gate Voltage VDG 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

PN4858

Abstract: 2N4392 NATIONAL SEMICONDUCTOR 2N4393 PN4856 TIS75 2N3971 2N4393, NATIONAL pn4093 PN4857 TIS74
Contextual Info: DDBTDIM CM CM CM CM CM O O O O O CM CM CM CM CM o O O O O CM CM CM CM CM 0 * 0 O O O CM CM CM h * r o o o o o K IO O 1 - T - T­ IO 40 i o IO IO ^ ^ in m i n lo Jo i n i n in in -r- t— t— CO CO in in in m w 00 O r in m m m in © © oo CM cm m issss

MPF102

Abstract: J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112
Contextual Info: 2N3966 s n-channel JFET S ilico n ix Performance Curves NH See Section 5 designed fo r . . . • Analog Switches ■ Choppers ■ Commutators B EN EF IT S Low Insertion Loss, No Offset Voltage R DS on < 220 n Short Switching Aperture Times Crss < 1-5 pF t ( o n ) + tfoff) < 50 n s Typical

transistor mosfet buv18a

Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
Contextual Info: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9

BC337 BC547

Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Contextual Info: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2N4092

Abstract: PN4092 2N4856 2N5116 2N4091 2N4093 2N4391 2N4392 2N4393 2N4856A
Contextual Info: Junction FETs* Continued Switches / Choppers N-Channel CASE TYPE NO. 7018 rDS(on) V g S(o H) >DSS (Ohm) 00 (mA) MAX MIN MAX V(BR)GSS c iss TO’92 c rss ton (ns) w (pF) <PF) (ns) toff PIN OUT MIN MAX MIN MAX MAX MAX MAX 30 . 40 16 5.0 25 40 SDG 15 .

mps2112

Abstract: UC3842 smps design with TL431 MPS2111 dc motor speed control tl494 TRANSISTOR MPS2112 ic equivalent book ncp1203 mosfet triggering circuit USING TL494 smps with uc3842 and tl431 SG3526 tip122 tip127 mosfet audio amp
Contextual Info: SG388/D Rev. 4, May-2002 Master Components Selector Guide Master Components Selector Guide ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2N5551

Abstract: 2N5550 2N5550G 2N55551 2N5551G 2N55551ZL1G 2N5551 TO92 2N5550RLRPG 2N5551RL1G 2N5551RLRAG
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO Vdc 140 160 2N5550 2N5551 Collector − Base Voltage VCBO Vdc VEBO