The Datasheet Archive

2N5640 datasheet (31)

Part Manufacturer Description Type PDF
2N5640 Central Semiconductor N CHANNEL SILICON FIELD EFFECT TRANSISTOR Original PDF
2N5640 Motorola FET Transistor, N Channel Junction Field Effect Transistor Original PDF
2N5640 On Semiconductor TRANS JFET N-CH 30V 5mA 3TO-226AA Original PDF
2N5640 Calogic N-Channel JFET Switch Scan PDF
2N5640 Central Semiconductor FET, JFET Transistor, N Channel Scan PDF
2N5640 Intersil N-channel JFET switch Scan PDF
2N5640 Intersil Shortform Data Book 1983/4 Scan PDF
2N5640 Intersil Data Book 1981 Scan PDF
2N5640 Micro Electronics Semiconductor Device Data Book Scan PDF
2N5640 Motorola European Master Selection Guide 1986 Scan PDF
2N5640 Motorola The European Selection Data Book 1976 Scan PDF
2N5640 Others Basic Transistor and Cross Reference Specification Scan PDF
2N5640 Others Shortform Transistor PDF Datasheet Scan PDF
2N5640 Others Shortform Transistor PDF Datasheet Scan PDF
2N5640 Others Shortform Datasheet & Cross References Data Scan PDF
2N5640 Others Catalog Scans - Shortform Datasheet Scan PDF
2N5640 Others Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
2N5640 Others Semiconductor Master Cross Reference Guide Scan PDF
2N5640 Others Shortform Data and Cross References (Misc Datasheets) Scan PDF
2N5640 Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF

2N5640 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2N5640

Abstract: 2N5640 MOTOROLA 2N5638 2N5653 2N5653 MOTOROLA 2N5639 2N5639+MOTOROLA
Text: | 2N5638 thru , 2N5640 CASE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M RATINGS Rating , = 100C C) -8 *0 Vdc, T a = 100°C) -6 -0 Vdc, Ta « 100°C) 2N5638 2N5639 2N5640 2N5638 2N5639 2N 5640 , 1.0 1.0 1.0 1.0 1.0 1.0 nAdc /iAdc nAdc - - - pAdc - toss 2N5638 2N5639 2N5640 VDS(on) 2N5638 2N5639 2N5640 rDS{on) 2N5638 2N5639 2N5640 - - mAdc 50 25 5.0 - _ - I I I , CHARACTERISTICS Static Drain-Source "O N " Resistance {V qs = 0, Id = 0, f - 1.0 kHz) rds(on) 2N5638 2N5639 2N5640


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PDF 0flbb54 2N5638 2N5640 O-226AA) 2N5653 2N5638 2N5639 2N5640 2N5640 MOTOROLA 2N5653 MOTOROLA 2N5639+MOTOROLA
2N5638

Abstract: 2N5640 2n6640 2N5639 2N5638-D topography
Text: 2N5639/W 2N5638/D 2N5640 2N5640 /W 2N5640 /D ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) characteristic 2n5638 2n5639 2n5640 unit test conditions min max min max min max bvgss Gate Reverse , iDlonl" 6 mA (2N5639I td Turn-OFF Delay Time 5.0 10 15 VQSIoffl = -10 V lD(onl= 3 mA ( 2N5640I tf


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PDF 2N5638-2N5640 2N5638) 5001B 2N5638 2N5638/W 2N5638/D 2N5639 2N5639/W 2N5640 2n6640 2N5638-D topography
2N5640 equivalent

Abstract: 2N6638 2N5640 2N5638 2N5639 B67A 2N5638 equivalent FC4A 2N663
Text: -92 See Section 7 Bottom Viow 2N5638 2N5639 2N5640 Unit Test Conditions Min Max Min Max Min , JUA VQS - -8 V (2N5639Í,. Vqs - -6 V ( 2N5640 ) TA-+100"C 6 I loss Saturation Drain Current 50 25 , mA (2N5638), Id - 6 mA (2N5639), Id - 3 mA ( 2N5640 ) 8 rDS(on) Static Drain-Source ON Resistance , VQS(off)= -10 V lD(on)=3 mA ( 2N5640 ) RL -3.2k SI ( 2N5640 ) 15


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PDF 2N6638) 2N5639) 2N5640) -10VDC 2N5640 equivalent 2N6638 2N5640 2N5638 2N5639 B67A 2N5638 equivalent FC4A 2N663
2N5640

Abstract: 2N5638 2N5639 2N5640 equivalent 2N5638-2N5640
Text: INFORMATION TO-92 2N5638 2N5639 2N5640 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified) Symbol Parameter Test Condition* 2N5638 2N5639 2N5640 Unit« Min Max Min Max Min Max bVqss , =15V, Vqs= -12V (2N5638), VQS= -8 VGS= -6V ( 2N5640 ) V (2N5639), 1.0 1.0 1.0 nA TA=100°C 1.0 1.0 , Voltage VGs = 0, Id= 12mA (2N5638), Id—6mA (2N5639), iD=3mA( 2N5640 ) 0.5 0.5 0.5 V fsjon) Static , Delay Time (Note 2) VOD=10V lD(0n)=12mA(2N5638) ÄI-IOV 'D(on) = 6mA(2N5639) RG = 50il lD 2N5640


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PDF 2N5638-2N5640 750fll 10sec) 3fl750Ã 10VDC 2N5640 2N5638 2N5639 2N5640 equivalent 2N5638-2N5640
2N5640

Abstract: 2N5638 2N5639 MOTOROLA 2N5639
Text: 2N5638 thru 2N5640 CASE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M R A T IN G S R ating , 2N5640 r DSlon) 2N5638 2N5639 2N5640 - - JFETs SWITCHING N-CHANNEL - DEPLETION S ym bol M in M ax U nit V (BRIGSS 'GSS 30 - Vdc - - lD loff) 2N5638 2N5639 2N5640 2N5638 2N5639 2N5640 - 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 nAdc /xAdc nAdc = = = = = = - 1 2 Vdc , 2N5640 30 60 100 10 4.0 pF pF O hm s Input Capacitance (V q s = 0, V q s = - 12 Vdc, f = 1.0 MHz


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PDF 2N5638 2N5640 O-226AA) MPF4391 2N5638 2N5639 2N5640 2N5639 MOTOROLA
2N5640 equivalent

Abstract: 2N5640 2N5638 2N5639 2N5638 equivalent 2N5638-40 J111 J111 equivalent
Text: 2N5639 2N5640 UNITS TEST CONDITIONS MIN MAX MIN MAX MIN MAX BVgss Gate Reverse Breakdown , 15V, Vgs = -12V (2N5638), Ves = -8V (2N5639), Vgs = -6V ( 2N5640 ) 1.0 1 0 1.0 yA TA = 100 , Voltage 0 5 0 5 05 V Vgs = 0, Id = 12mA (2N5638), Id = 6mA (2N5639), Id = 3mA( 2N5640 ) TDS(on) Static , 8 0 10 ns VgS(oìi) = 0 Vgs(oII) = -10V Id (on) = 6mA (2N5639) Rg = 50ÌÌ lD(on) = 3mA ( 2N5640


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PDF 2N5638-2N5640 10sec) 310mW 82mW/Â 2N5640) 16MM322 10VDC MM352 2N5640 equivalent 2N5640 2N5638 2N5639 2N5638 equivalent 2N5638-40 J111 J111 equivalent
2N5640

Abstract: 2N5640 MOTOROLA 2N5638 2N5639 2N5639 MOTOROLA motorola 2N5639
Text: 2N5638 2N5639 2N5640 q I N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS . . . depletion , Vdc) 2N5640 ~,~if:p ` $i\Jtf< `~~, , w. ,. .*:.:.$$> , k.:; ;+~ ~Adc - (VDS = , {VDS = 20 Vdc, VGS = O) 2N5639 2N5640 Drain-Source "ON" (ID = 12 mAdc, Voltaga (1D = 6.0 mAdc, VGS = O) 2N5639 (1D = 3.O mAdc, VGS = O) 2N5640 (ID= l.OmAdc, "ON" , 2N5639 - 6.0 3.0 mAdc 2N5640 - 8.0 = 12 mAdc 2N5638 - 5.0 6.0 mAdc


Original
PDF 2N5638 2N5639 2N5640 N5638) N5639) N5640) 2N5640 2N5640 MOTOROLA 2N5638 2N5639 2N5639 MOTOROLA motorola 2N5639
2N5640 equivalent

Abstract: 2N5640
Text: Voltage Gate Reverse Current 2N5638 2N5639 2N5640 UNITS MIN MAX MIN MAX MIN MAX -30 -1.0 -1.0 1.0 1.0 , = 15V, Vgs » -12V (2N 5638), V gs = -8V (2N5639), Vgs = -6V ( 2N5640 ) Ta = 100°C V ds = 20V, Vgs = 0 (Note 1) Vgs = 0, Id = 12mA (2N5638), Id = 6mA (2N5639), I d = 3mA ( 2N5640 ) Id = 1mA, Vgs = 0 Vss = 0, Id = 0 V gs = '12V, Vds = 0 f = 1kHz f = 1MHz = 12mA (2N5638) = 3mA ( 2N5640 ) iD(off) Id s s


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PDF 2N5B38-2N5B40 2N5639) 300ns, 2N5638-2N5640 10VDC 2N5640 equivalent 2N5640
1997 - 2N5640 MOTOROLA

Abstract: 2N5640 2N5640 equivalent
Text: MOTOROLA Order this document by 2N5640 /D SEMICONDUCTOR TECHNICAL DATA JFETs Switching 2N5640 N­Channel - Depletion 1 DRAIN 3 GATE 1 2 2 SOURCE Rating Symbol , . 1997 1 2N5640 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued , Motorola Small­Signal Transistors, FETs and Diodes Device Data 2N5640 TYPICAL SWITCHING , 20 10 C, CAPACITANCE (pF) y fs, FORWARD TRANSFER ADMITTANCE (mmhos) 2N5640 10 7.0 5.0


Original
PDF 2N5640/D 2N5640 226AA) 2N5640 MOTOROLA 2N5640 2N5640 equivalent
2N5640 equivalent

Abstract: 2N6638 2N5640 PN4391 equivalent Siliconix Dual N-Channel JFETs B67A 2N5638 equivalent J113 equivalent 2N5639 2N5638
Text: Bottom Viow 2N5638 2N5639 2N5640 Unit Test Conditions Min Max Min Max Min Max 1 BVQSS , - -6 V ( 2N5640 ) TA-+100"C 6 I loss Saturation Drain Current 50 25 5.0 mA VDS = 20V,VGS-0 (Note 1 , ), Id - 3 mA ( 2N5640 ) 8 rDS(on) Static Drain-Source ON Resistance 30 60 100 n, lD= 1 mA, VQS - 0 9 , ) 14 V» td(off) Turn-OFF Delay Time 5.0 10 15 VQS(off)= -10 V lD(on)=3 mA ( 2N5640 ) RL -3.2k SI ( 2N5640 ) 15


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PDF 100KA, 2N5640 equivalent 2N6638 2N5640 PN4391 equivalent Siliconix Dual N-Channel JFETs B67A 2N5638 equivalent J113 equivalent 2N5639 2N5638
2N5640 equivalent

Abstract: SILICONIX 2N4391 2N5638 2N5638 equivalent Siliconix JFET Duals
Text: 2N5640 rds(ON) I d (o f f ) MAX MAX (nA) (il) 30 60 100 1 1 1 to N MAX (ns) 9 14 18 TO-92 B O T T O , A L C H A R A C T E R IST IC S 1 2N5640 M IN M A X U N IT " PARAM ETER SYM BO L ·. , G Turn-on Time Turn-off Time td(ON) tf Vqd = 10 V. V q s (ON) = 0 V P/N 2N5638 2N5639 2N5640


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PDF 2N5638 2N5639 2N5640 2N5640 equivalent SILICONIX 2N4391 2N5638 equivalent Siliconix JFET Duals
2N5640

Abstract: 2N564
Text: Current 2N5638 2N5639 2N5640 UNITS MIN MAX MIN MAX MIN MAX -30 -1.0 -1.0 10 1.0 I dss V d S (on) TDS(on , = 15V, Vgs = -12V (2N5638), Vgs = -8V (2N5639), Vgs = -6V ( 2N5640 ) Ta = 100°C Vos = 20V, V gs = 0 (Note 1) Vgs = 0, Id = 12mA (2N5638), Id = 6mA (2N5639), I d = 3mA ( 2N5640 ) Id = 1mA, Vgs = 0 Vgs = 0


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PDF 2N5638-2N5B40 2N5638) GGDDT30 2N5B38-2N5640 10VDC 2N5640 2N564
Not Available

Abstract: No abstract text available
Text: REV 1 4 -1 3 0 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5640 , 2N5640 TYPICAL SWITCHING CHARACTERISTICS 1000 1000 500 ~^GS(off) = 12 V : _ w Ï 500 £ 1 9 , . 4-132 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5640 3 er O 0.5 0.7


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PDF
1D TRANSISTOR

Abstract: 2N5639 2N5640 2N5638
Text: Cfr?if«si saftficofiiJtfeteif Cerp. Central™ semiconductor corp. 145 Adams Avenue Hauppauge, New York 1 1 788 ♦I 2N5638 2N5639 2N5640 N CHANNEL SILICON FIELD EFFECT TRANSISTOR JEDEC TO-92 CASE (DSG) DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5638 series types are silicon N channel field effect transistors designed for switching applications. MAXIMUM RATINGS (Ta=25°C unless otherwise noted , , 1D(ON)=3•OmA, RG=50fi - - 2N5640 MIN MAX 1 .0 1.0 5.0 30 1 .0 1 .0 0.5 100 100 10 4.0


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PDF 2N5638 2N5639 2N5640 2N5639 2N5640 1D TRANSISTOR
adjustable current limiter

Abstract: in4001 2N5640 OM1326NTM OM1326STM
Text: < 1 A > D, IN4001 D2IN4001 2N5640 <5 Vas' T-58-11-23 MPS2222 W\-< TTL 1 ^ Control Minimum VÂ


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PDF OM1326NTM OM1326STM T-58-TT-23 OM1326STM adjustable current limiter in4001 2N5640
Not Available

Abstract: No abstract text available
Text: 10 20 25 20 50 40 100 2N4861A 2N5555 2N5638 2N5639 2N5640 TO-18 TO-92DD TO


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PDF 2N3966 O-92DD O-72DH 2N4861A 2N5555 2N5638 2N5639 2N5640
lm350

Abstract: No abstract text available
Text: voltage to 0 V. Ri v out ► 1N4001 2N5640 T Figure 21. 5.0 V Electronic Shutdown , 1N4001 1.0k 2N5640 R 2< ^ toss Ri = Minimum Vout = 1.25 V Vret o Vss1 IOmax + lDSS


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PDF LM350 LM350 1N4001 2N5640
LM3171

Abstract: pin diagram ic lm317 IC LM317 motorola LM317 diode 1n4001 specification lm317 diodes IN4001 LM317 vw LM317 applications diodes IN4001 SYMBOL
Text: output voltage to 0 V. Dg protects both LM317s during an input short circuit. Q2 2N5640 IN4001 , below-1.25 V. 100 TH 2N5640 1 OK ^ Control Vref 'DDS R ,= Vref Minimum Vout -1.2 5 V °


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PDF LM317 1N4001 MPS2222 2N5640 LM317 LM3171 pin diagram ic lm317 IC LM317 motorola LM317 diode 1n4001 specification diodes IN4001 LM317 vw LM317 applications diodes IN4001 SYMBOL
2N4393 MOTOROLA

Abstract: 2N3970 2N4393 2n4093 motorola MPF820 MPF-4391 Motorola 2N4393 MPF4392
Text: MOTOROLA SC -CDIODES/OPTOÏ 34 D F |t.3 b 7 2 S 5 003ÛD34 ñ 6 3 6 7 2 5 5 M O T O R O L A SC 2N5640 2NS653 2N5654 MFE2004 MFE2005 MFE2006


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PDF DFM140 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4392 2N4393 2N4856 2N4393 MOTOROLA 2n4093 motorola MPF820 MPF-4391 Motorola 2N4393 MPF4392
2N4092

Abstract: NF510
Text: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING TYPE NO. J ill J112 J113 NF510 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A 2N4859 2N4859A 2N4860 2N4860A 2N4861 2N4861A 2N5555 2N5638 2N5639 2N5640 2N5653 2N5654 CASE TO-92DD TO-92DD TO-92DD TO-18 TO-72DH TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-92DD TO-92DD TO-92DD TO-92DD TO


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PDF NF510 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392
Not Available

Abstract: No abstract text available
Text: D 1 Adjust 1 —j q2 2N5640 Output Range: 0 £ Vo £ 25 V O S I q î 1.5A 1N4001 , to a n voltage below -1.25 V. p < D 1 R2 1N4001 100 D2 1N4001 1.0k 2N5640


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PDF LM350 LM350 1N4001 2N5640
U1897E

Abstract: U1899E uc251 2N4978 U1898E uc250 fn91 UC130 UC110 UC714E
Text: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number (TO) (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A 2N4859 2N4859A 2N4860 2N4860A 2N4861 2N4861A 2N4977 2N4978 2N4979 2N5555 2N5638 2N5639 2N5640 2N5653 2N5654 J109 KK3970 KK3971 KK3972 KK4091 3.0 1.5 6.0 6.0 6.0 5.0 5.0 5.0


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PDF 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 U1897E U1899E uc251 2N4978 U1898E uc250 fn91 UC130 UC110 UC714E
2N5640 MOTOROLA

Abstract: Motorola 2n4393 2N4393 motorola 2N4092 MPF970 2N4352 2N5640 2N5639 MOTOROLA 2N4391 MOTOROLA 2N4352 FET
Text: 2N 5639 2N5640 MPF970 MPF971 MPF4391 MPF4392 MPF4393 OUTLINE DIMENSIONS The TO-18 and TO


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PDF 2N3993 2N3994 2N4091 2N4092 2N4093 2N4351 2N4352 2N4391 2N4392 2N4393 2N5640 MOTOROLA Motorola 2n4393 2N4393 motorola 2N4092 MPF970 2N4352 2N5640 2N5639 MOTOROLA 2N4391 MOTOROLA 2N4352 FET
motorola LM317

Abstract: LM317T pin configuration Transistor LM317t IC LM317 LM317 lm 317 pcb layout for LM317 adjustable LM317BT diodes IN4001 SYMBOL lm317t
Text: q2 IN4001 2N5640 -10 V f Figure 21. Adjustable Current Lim iter +25 V LM317 Vin , -1.2 5 V. MPS2222 2N5640 10k TTL Control R1 = - ^ -'Ornax + *DSS R2 < ^ 'DDS


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PDF LM317 IN4001 2N5640 LM317 MPS2222 motorola LM317 LM317T pin configuration Transistor LM317t IC LM317 lm 317 pcb layout for LM317 adjustable LM317BT diodes IN4001 SYMBOL lm317t
NF510

Abstract: 2N4393 2N4092 2N3971 2N4860A 2N4091 2N3972 2N3970 2N3966 J113
Text: -92DD 310 30 50 - - 150 10 4 9 15 2N5639 TO-92DD 310 30 25 60 10 4 14 30 2N5640 TO-92DD 310 30 5 _ â


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PDF O-92DD NF510 2N3966 O-72DH 2N3970 2N3971 2N3972 2N4091 2N4393 2N4092 2N4860A J113
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