J106 Search Results

JFET J105

Contextual Info: Tem ic Sillconix _ J105/106/107 N-Channel JFETs Product Summary P a rt N um ber v GS<off Y) rnscon) M ax ( ß ) J105 -4 .5 to - 1 0 3 10 14 J106 - 2 to - 6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 toN iy p (ns) iD(off) ty P (PA) Features

J107

Abstract: J106 J105 NDSJ105
Contextual Info: J105 J106 J107 NDSJ105 S O T -2 3 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is m andatory. Sourced from Process 59. Absolute Maximum Ratings* T A = 2 5°C u nless o th e rw is e noted

J201 N-channel JFET

Abstract: MMBFJ202 BF244 J309 5486 J309-J310 4392 p-channel jfet rf MMBFJ211 MMBF4091
Contextual Info: Section 5 JFET Datasheets J105 / J106 / J107 / JFTJ105 N-Channel Switch . 5-3 J108 / J109 / J110 / MMBFJ108 N-Channel Switch . 5-7 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch . 5-11

j105 transistor

Abstract: Capacitance j107 J106 J107 diode CBVK741B019 F63TNR J105 J107 JFTJ105 PN2222N
Contextual Info: J105 / J106 / J107 / JFTJ105 J105 J106 J107 JFTJ105 G D G S SOT-223 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.

to-206ac

Abstract: NVA2CHP U290
Contextual Info: NVA N-Channel JFETs fT-Sificonix in c o rp o ra te d DEVICE TYPE PACKAGE Single TO-92 TO-226AA • J105, J106, J107 Single TO-52 (TO-206AC) • U290, U291 Single Chip • Available as NVA1CHP, NVA2CHP, NVA3CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current

integrated circuit

Abstract: sram LRS1322
Contextual Info: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1322 Stacked Chip 16M x16 Flash Memory and 2M (×16) SRAM (Model No.: LRS1322) Spec No.: MFM2-J10604A Issue Date: October 12, 1998 LRS1322, Flash Memory, Flash, Non-Volatile Memory, Flash, E2ROM, Flash ROM, Read Only Memory, ETOX

J106

Abstract: J105 J107
Contextual Info: J105 J106 J107 J106-18 J107-18 J105-18 n-channel JFETs designed f o r 3 . S ilic o n ix Perform ance C u rves N V A See Section 5 • Analog Switches B E N E F IT S • Very Low Insertion Loss ^ D S o n ^ 3 (J105) • N o Offset or Error Voltages Generated

J106

Abstract: J105 J107 Diode j106 diode j107 j105 transistor J107 diode JFTJ105
Contextual Info: J105 J106 J107 JFTJ105 G D G G TO-92 S D SOT-223 S N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

J107

Contextual Info: B iîv S o œ o ü C T Q R J105 J106 J107 JFTJ105 N-Channel Switch This device is designed for analog or digital sw itching applications where very low On Resistance is m andatory. Sourced from Process 59. Absolute Maximum Rdtinys T A = 2 5 ° C unless o th e rw ise noted

j105 transistor

Abstract: J106 J107 JFTJ105 PN2222N CBVK741B019 F63TNR J105
Contextual Info: J105 / J106 / J107 / JFTJ105 J105 J106 J107 JFTJ105 G D G S SOT-223 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.

j105

Abstract: PW 1.5 Siliconix JFET N-Channel JFET Vgs(off) Siliconix N-Channel JFETs J106 J107 diode pa 4010 J107
Contextual Info: J105/106/107 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D

Contextual Info: J105/106/107 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D

Stanag-3909

Contextual Info: A d v a n c e d R e l e a s e FEATURES MODEL NO. 100D9109 500 - 2000 MHz Amplitude / Phase Tracking 0.7 dB Insertion Loss 80 dB Isolation D38999/25NB35PN DC, CONNECTOR Combiner 6.50 1.00 J101 J102 J108 J109 J110 GREEN J111 J107 BLUE 2.00 J106 YELLOW NAMEPLATE

Contextual Info: J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 FEATURES BENEFITS APPLICATIONS D D D D

J105

Contextual Info: Tem ic J105/106/107 Semiconductors N-Channel JFETs Product Summary P a rt N um ber J105 J106 J107 V g S «B (V) -4.5 to -10 -2 to -6 -0.5 to -4.5 Features • • • • • Low On-Resistance: J 105 < 3 Q Fast Switching— îq n : 14 ns Low Leakage: 10 pA

j105

Abstract: JFTJ105 J106
Contextual Info: SiMICDNDUQTOH J105 J106 J107 JFTJ105 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is m andatory. Sourced from Process 59. Absolute Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

J105

Abstract: J106 J107
Contextual Info: J105/106/107 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 -4.5 to -10 3 10 14 J106 -2 to -6 6 10 14 J107 -0.5 to -4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D D

Contextual Info: J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. Ordering Informations Part Number Marking J105 J105 J106 J106 J107 J107

E101 FET

Abstract: c681 FET FET C681 50P3P U320 FET 2SK160 NEC u320 motorola KE4859 Z3M g BFS21A
Contextual Info: JUNCTION FET Item Number Part Number Manufacturer V BR GSS loss Uta VaS(Off) lass elsa Max (Vl (AJ Min (S) Max Max (V) Max (F) (A) Po Max (W) Derate at Toper (wre) tOe) Package Max Style N-Channel JFETs, (Cont'd) 5 10 2N5432 J106 J106-18 J106-18 J106-18 J106

Contextual Info: Tem ic Semiconductors # SOT23 TO 18 2 lead T018 (3 lead) ^ TOS2 T072 TO92 (2 lead) ^ T092(31ead) JFETs - N-Channel JFET Analog Switches Break­ down Voltage Mm i \ i “ VS i f .5 » . ¡ i f * , • fe ’ (Q> Min \b x Min J 105 3 ^ .5 -10 500 -20 J106

BUJ106A

Abstract: NPN Transistor VCEO 1000V T0220AB buj106a NPN Transistor
Contextual Info: Product specification Philips Sem iconductors Silicon Diffused Pow er Tran sistor B U J106A G ENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220A B envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

j105 transistor

Contextual Info: J105 / J106 / J107 / JFTJ105 JFTJ105 J105 J106 J107 G D G S SOT-223 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.

Diode j106

Abstract: J106 Capacitance j107 j105 transistor J107 diode j107 j105 J107 diode NDSJ105
Contextual Info: J105 J106 J107 NDSJ105 G D G S TO-92 S SOT-23 D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

U290

Abstract: J105 J106 J107 U290-1 U2901
Contextual Info: J105 J106 J107 J106-18 J107-18 J105-18 n-channel JFETs designed f o r 3 . S ilico n ix Performance Curves NVA See Section 5 • Analog Switches BEN EFITS • Very Low Insertion Loss ^DS on ^ 3 (J105) • No Offset or Error Voltages Generated by Closed Switch