U290 Search Results

IR*2905

Abstract: u290 AN-994 IRLR2905 IRLU2905 IRLZ44N 91334E
Contextual Info: PD- 91334E IRLR/U2905 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (U2905) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G ID = 42A…

VCO TX 09 H2

Contextual Info: Tem ic U2901B S e m i c o n d u c t o r s Bluetooth Single-Chip Transceiver IC Description The U2901B is a bipolar intergrated circuit manufactured using TEMIC Semiconductors’ advanced UHF process. This IC includes a transceiver for the 2.45 GHz ISM band

Contextual Info: 㲓 ⪏ⳅ㦐⧧㨡 SII集团的环境经营 ⪏ⳅ⤸⹻㝛㺨 ⿖㓧⤖⿼ ᮡᮡ㵀ⲽ⤀♋㽳㱸㦎⤇㙶㔣⒌☨⼸☠㥲ᱨ㮾⡘ 㵖 ⪏ ⳅ ☨⛏㖼 ᮡᮡSII㺤⻲㲂⵺㷝⿖ 㓧⤖⿼⫆⛑ᱨ⭊⤖⿼㖫ⓥ⼗ⶌ⿑␤㊹☨ SII⯿᮰⿖㓧⤀㩠ᮤ⿖㓧␤㊹ᮤ⿖㓧㔶⫆᮱☨㑻⿖㓧㾗㢜⫑〉⹻

Contextual Info: 㲓⪏ⳅ㦐⧧㨡 绿色产品的进步与发展～环保型产品・为环保做贡献 的产品～ 6,㮾᮰Ⰷᮤ㨏ᮤ㖛᮱☨⭒㗯⹻ㅴ㢜⫑╇ᱨ㝗⤅⪏⌏㨻⫊㢜⪏⌏㾖⤍㦇☨␤㊹ᮣ SII⿖㓧㔈㊹ ⿖㓧␤㊹plus 㝗⤅➖㢙☨⸷▙

Contextual Info: SI I ⭅㟹㖼㮟⡣ⷆ SII⭅㟹☨␤㊹㺸⹮➑✂ᱨ㱸▙⭨㗦㺌☨㑓⒋㦫➱㊹ᮢ⏷㝲⧧ⓞ㾂⒝㽈㱫☨␤㊹ᮢ㮾⭆㱫㲂⊚⤇㗌ᮢ㫼ⳑ㚱⧧⤀⒏☬☨㔤⌤ᮣ ⼹㠖ᱨ⼯⏩⮔㮜㾗㢜㩛✂␤㊹☨⤴⮒⏩➶⌧⤿➚⺉㱫ᮣ

Contextual Info: ⤇ 㸡ᮢⒷ㖯☨㋵㮟⫆⛑ ＣＳＲ ⢕⏩ろ⪹⮑☬➝㖷㚉⭅㨳㥒ᱨ㵀⭶㖼⪹㔋ⱌ㨾㯌⮑Ⰿ⪓ᱨ⹂㖯 风险管理 ㅠ⏩㟜⌔㺨⛪ 㦆 ⛶⛏㖼☨㺒㣣㺖㨾㽔ⷆ☨⭶⛟ᮣ⭶㖼⪹⫑ 〉ょ㴨⛞⪹㷽⵺ CSR㢡㴗⪹ ᱤ2012ㅰ⛪⤎㷽⵺9╴ᱥᮣ2012ㅰ⛪⤇㙶㠖⭶㖼☨⭶㖼⪹㊿ⴋ

IRLR2905

Abstract: AN-994 IRLU2905 IRLZ44N
Contextual Info: PD- 91334E IRLR/U2905 HEXFET Power MOSFET l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (U2905) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.027Ω G ID = 42A…

TO-251AA Package

Abstract: fu120
Contextual Info: IRLR/U2905 Package Outline HEXFET I-PAK TO-251AA Outline Dimensions are shown in millimeters (inches) 6 .73 ( .2 65 ) 6 .35 ( .2 50 ) 2.38 (.09 4 ) 2.19 (.08 6 ) -A - 0.58 (.02 3) 0.46 (.01 8) 1 .2 7 ( .0 50 ) 0 .8 8 ( .0 35 ) 5.46 (.21 5) 5.21 (.20 5) L E A D A S S IG N M E N TS

Contextual Info: U2903J Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V 2.0 Load Current Max. (A)70m Drop-Out Volt Max. P(D) Max. (W)1.0 Nom. Supp (V)40 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Package StyleDIP

to-206ac

Abstract: NVA2CHP U290
Contextual Info: NVA N-Channel JFETs fT-Sificonix in c o rp o ra te d DEVICE TYPE PACKAGE Single TO-92 TO-226AA • J105, J106, J107 Single TO-52 (TO-206AC) • U290, U291 Single Chip • Available as NVA1CHP, NVA2CHP, NVA3CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current

U290

Abstract: u291
Contextual Info: U290/291 Semiconductors N-Channel JFETs Product Summary Typ ruscon M a x Q ) ÏD(ofD TH» (i*A) U290 - 4 to -10 3 0.01 14 U291 -1.5 to -4.5 7 0.01 14 Vg sm o CV) tON (ns) Features Benefits Applications • • • • • • • • • • • • •

U290

Contextual Info: B 65 9 -9 7 U290, U291 N -C H A N N E L SILICO N JU N CTIO N FIELD-EFFECT TRANSISTO R • CHOPPERS • LOWON RESISTANCE SWITCHES Absolute maximum ratings at Ta = 25°C Rsverse Gate Source & Reverse Gats Drain Voltage Continuous Forward Gate Current — 30 V

HB-S Rectifier

Contextual Info: PD- 9.1334C International TOR Rectifier IRLR/U2905 PR E LIM IN A R Y HEXFET Power MOSFET Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (U2905) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = 55V

U290

Abstract: U290-1 U291 j105-7 jfet to 92
Contextual Info: . Performance Curves NVA See Section 5 • Analog Switches U291 designed for . H Siliconix U290 n-channel JFETs B EN EFITS ■ Commutators • Ultra-Low Insertion Loss ■ Choppers • High Off-lsolation RDS on <2-5i2(U290) 'D (o ff) < 1 nA ABSOLUTE M A X IM U M R A TIN G S (25°C)

P3100SBRP

Abstract: SMDC110 CN3-17 P3100SB-RP
Contextual Info: 5 4 3 2 N242S1 CRT BOARD REV:C P/N: 35-U29020-00C 1 L8 BLM21300S_0805 + C12 4.7u/16V CRT C13 0.1u 2 F1 SMDC110_1.1A 1 +5V D D +5V +5V R6 +5V +5V +5V +5V CN3 RED L3 BLM11P600S GREEN L4 BLM11P600S BLUE L6 BLM11P600S DDCCLK-1 L5 BLM11P600S L7 BLM11P600S 1 9 2

U290

Contextual Info: U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3 W Fast Switching—tON: 14 ns

Contextual Info: U2903N Linear ICs Battery/Power Supply Monitor Circuit status Military/High-RelN Output Voltage Nominal V 2.0 Load Current Max. (A)70m Drop-Out Volt Max. P(D) Max. (W)1.0 Nom. Supp (V)40 Minimum Operating Temp (øC)-25 Maximum Operating Temp (øC)85 Package StyleDIP

Contextual Info: IRLR/U2905 Package Outline HEXFET TO-252AA D-PAK Outline Dimensions are shown in millimeters (inches) 2 .38 (.0 9 4 ) 2 .19 (.0 8 6 ) 6 .73 (.2 6 5) 6 .35 (.2 5 0) 1.1 4 (.0 45 ) 0.8 9 (.0 35 ) -A1 .2 7 (.0 50 ) 0 .8 8 (.0 35 ) 5 .4 6 (.2 15 ) 5 .2 1 (.2 05 )

u290

Contextual Info: T e m ic N-Channel JFETs Ü290/291 Product Summary Part Number U290 U291 Vg S{oB V) -4 to -10 -1.5 to -4.5 Features • • • • • Low On-Resistance: U290 <3 Q Fast Switching—îqn : 14 ns

U3903

Abstract: UL903 U2903 U1903 C1903
Contextual Info: y ^ IN T E G R A T E D C IR C U IT B U1903 U2903 U3903 U N ITR O D E Quad Supply and Line Monitor FEATURES • Inputs for m onitoring up to four separate sup p ly voltage levels • Internal inverter for s en sin g a negative supply voltage • L in e /s w itc h e r sen se in p u t for early

Contextual Info: ⭱ 㺗☨㝗⤅ 㱒㮟㋵⪆⏩ろ ᯱ⤅㱎㔈㑍⛊ 㫼ⳑ⵺➂㔤⭜⏩ろ ᯱ㟜㱫㔤⭜ 㔶␤⭒㗯㔶␤⏩ろ ᯱ␤㊹☨≠㐩⧧≠㨲 㺬⼋⌏㺆⏩ろ 〉ᮢⰏ⫍㋜⭆␤㊹☨≠㐩㩂㵀ㅠᱨ㣄わ㮔㵀⢕⢔➝ギ㖳⤧⶝〄

9508

Abstract: IRF (10A) 55V AN-994 IRFR120 IRFU120 IRLR2905 IRLU2905 IRLZ44N U120 IRLR2905 42A, 55V
Contextual Info: PD- 95084A IRLR/U2905PbF l l l l l l l l Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (U2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.027Ω

Contextual Info: IRLR/U2905 l l l l l l l I-P a k T O -2 5 1 A A D -P a k T O -2 5 2 A A Logic-Level Gate Drive Ultra Low On-Resistance Surface Mount IRLR2905 Straight Lead (U2905) Advanced Process Technology Fast Switching Fully Avalanche Rated Description The D-PAK is designed for surface mounting

Contextual Info: 㔣⒌㺤╭ 通过创造新价值，为社会做贡献 “创造时光运用时光、丰富时光” ⳟ⏥⪹㱸㢦⹂㔣⪹☨➑㑗⧧㋵㮟☨Ⓘ㩦➂㷝ᮣSII㾗㢜㔣⪹⒱ 力求与环境相和谐 ⹻ㅴ㲓⤇㙶㨼㦣 㴗㺐㮥ᱨ㮔Ⓦ➶㑍㖰㸆㨗㦆㽔ᱨ⏌㢜⤕㻠Ⓘ㩦➂㷝☨㔣⪹ᱨ☇