J105 Search Results

JFET J105

Contextual Info: Tem ic Sillconix _ J105/106/107 N-Channel JFETs Product Summary P a rt N um ber v GS<off Y) rnscon) M ax ( ß ) J105 -4 .5 to - 1 0 3 10 14 J106 - 2 to - 6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 toN iy p (ns) iD(off) ty P (PA) Features

J105E

Contextual Info: J105E RoHS Compliant 20.1 x 9.9 x 15.4 mm E197852 Features • • • • Switching capacity up to 10A Small size and light weight Low coil power consumption High contact load Contact Data Contact Arrangement Dimensions shown in mm. Dimensions are shown for reference purposes only.

Capacitance j107

Abstract: J107 J106 J10s J105 J105-J107
Contextual Info: onü^ioiL J 1 0 5 -J 1 0 7 N -C hannel JFET PIN CONFIGURATION TO-92 FEATURES • Low rDS on (30 MAX J105) APPLICATIONS Analog Switches, Choppers, Commutators ABSOLUTE MAXIMUM RATINGS (25 °C) Gate-Drain or G ate-Source V o lta g e .- 2 5 V

diode 2m

Abstract: etox Flash Memory flash memory circuit flash rom integrated circuit memory chip Model 2M RAM memory chip read only memory
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1317 Stacked Chip 16M x16 Flash Memory and 2M (×16) SRAM (Model No.: LRS1317) Spec No.: MFM2-J10503C Issue Date: October 12, 1998 LRS1317, Flash Memory, Flash, Non-Volatile Memory, Flash ROM, Read Only Memory, ETOX

p381

Abstract: code tq smd
Contextual Info: ＳＭＤインダクタ SMD INDUCTORS OPERATING TEMP K25 V J105C f製品自己発熱含むg K25 V J105C fIncluding self-generated heatg 特長 FEATURES YSMD inductor. YIt corresponds to High current. YSimple and original magnetic shield structure. YSMDインダクタ

J107

Abstract: J106 J105 NDSJ105
Contextual Info: J105 J106 J107 J105 S O T -2 3 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is m andatory. Sourced from Process 59. Absolute Maximum Ratings* T A = 2 5°C u nless o th e rw is e noted

J201 N-channel JFET

Abstract: MMBFJ202 BF244 J309 5486 J309-J310 4392 p-channel jfet rf MMBFJ211 MMBF4091
Contextual Info: Section 5 JFET Datasheets J105 / J106 / J107 / J105 N-Channel Switch . 5-3 J108 / J109 / J110 / MMBFJ108 N-Channel Switch . 5-7 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch . 5-11

j105 transistor

Abstract: Capacitance j107 J106 J107 diode CBVK741B019 F63TNR J105 J107 JFTJ105 PN2222N
Contextual Info: J105 / J106 / J107 / J105 J105 J106 J107 J105 G D G S SOT-223 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.

to-206ac

Abstract: NVA2CHP U290
Contextual Info: NVA N-Channel JFETs fT-Sificonix in c o rp o ra te d DEVICE TYPE PACKAGE Single TO-92 TO-226AA • J105, J106, J107 Single TO-52 (TO-206AC) • U290, U291 Single Chip • Available as NVA1CHP, NVA2CHP, NVA3CHP TYPICAL CHARACTERISTICS On-Reslstance & Drain Current

NP05DZB

Abstract: 52m01 rod ferrite inductor design
Contextual Info: ＳＭＤインダクタ SMD INDUCTORS OPERATING TEMP K25 V J105C f製品自己発熱含むg K25 V J105C fIncluding self-generated heatg 特長 FEATURES YSMD inductor. YIt corresponds to High current. YSimple and original magnetic shield structure. YSMDインダクタ

J106

Abstract: J105 J107
Contextual Info: J105 J106 J107 J106-18 J107-18 J105-18 n-channel JFETs designed f o r 3 . S ilic o n ix Perform ance C u rves N V A See Section 5 • Analog Switches B E N E F IT S • Very Low Insertion Loss ^ D S o n ^ 3 (J105) • N o Offset or Error Voltages Generated

J106

Abstract: J105 J107 Diode j106 diode j107 j105 transistor J107 diode JFTJ105
Contextual Info: J105 J106 J107 J105 G D G G TO-92 S D SOT-223 S N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

J107

Contextual Info: B iîv S o œ o ü C T Q R J105 J106 J107 J105 N-Channel Switch This device is designed for analog or digital sw itching applications where very low On Resistance is m andatory. Sourced from Process 59. Absolute Maximum Rdtinys T A = 2 5 ° C unless o th e rw ise noted

j105 transistor

Abstract: J106 J107 JFTJ105 PN2222N CBVK741B019 F63TNR J105
Contextual Info: J105 / J106 / J107 / J105 J105 J106 J107 J105 G D G S SOT-223 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.

J106

Abstract: J107 J105 N-Channel JFET Switch Capacitance j107
Contextual Info: G E S O L I D STATE 01 D E ^ 3575061 D D l l P m □ | 01E 11041 D T '- ' 3 S — 2. ir " 38750Ô1 6 E SOLID STATE J105-J107 N-Channel JFET Switch I FEATURES APPLICATIONS • Low rDS on • Analog Switches • Choppers • Commutators PIN CONFIGURATION §

Contextual Info: J105/106/107 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D

Contextual Info: J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 –4.5 to –10 3 10 14 J106 –2 to –6 6 10 14 J107 –0.5 to –4.5 8 10 14 FEATURES BENEFITS APPLICATIONS D D D D

j105

Abstract: JFET J105
Contextual Info: J105/106/107 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY v G S o ff (V) r D S (o n ) Max (£2) 'D ( o ff) Typ (pA) toN Typ (ns) J105 -4 .5 t o -1 0 3 10 14 J106 -2 to -6 6 10 14 J107 -0 .5 to -4 .5 8 10 14 FEATURES BENEFITS APPLICATIONS • • •

J105

Contextual Info: Tem ic J105/106/107 Semiconductors N-Channel JFETs Product Summary P a rt N um ber J105 J106 J107 V g S «B (V) -4.5 to -10 -2 to -6 -0.5 to -4.5 Features • • • • • Low On-Resistance: J 105 < 3 Q Fast Switching— îq n : 14 ns Low Leakage: 10 pA

j105

Abstract: JFTJ105 J106
Contextual Info: SiMICDNDUQTOH J105 J106 J107 J105 N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is m andatory. Sourced from Process 59. Absolute Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

J105

Abstract: J106 J107
Contextual Info: J105/106/107 Siliconix NĆChannel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J105 -4.5 to -10 3 10 14 J106 -2 to -6 6 10 14 J107 -0.5 to -4.5 8 10 14 Features Benefits Applications D D D D D D D D D D D D D

Contextual Info: J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. Ordering Informations Part Number Marking J105 J105 J106 J106 J107 J107

XJ107

Abstract: Capacitance j107
Contextual Info: CALOGI C CORP _ 4ÖE D • N-Channel JFET Switch _ caioqrc CORPORATION 1ÖMM322 00DG375 S m C G C -paS2S \J J105-J107 FEATURES ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified • Low rDS(on) Gate-Drain or Gate-Source Voltage . -25V

j105 transistor

Contextual Info: J105 / J106 / J107 / J105 J105 J105 J106 J107 G D G S SOT-223 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59.