IRFD1Z3 Search Results

k 3525 MOSFET

Abstract: IRFD1ZO irfd1z3
Contextual Info: HE 0 I MâSS4SH 0000300 b | Data Sheet No. PD-9.380G T-35-25 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER TO R HEXFET TRANSISTORS IRFD1 ZO IM-CHANNEL HEXDIP IRFD1Z3 1-WÄTT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PAGKAGE 100 Volt, 2.4 Ohm, 1-Watt HEXDIP

IRF0110

Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123

IRFD1Z0

Contextual Info: -File Number Standard Power MOSFETs IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 2313 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 0.4 A and 0.5 A, 60 V - 100 V

irfd1z3

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFD1Z0 IRFD1Z3 Advance Information S m all-S ig n al T M O S Field E ffe c t T ran sisto r 1 W ATT N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP T M O S FETs r D S o n = 0-8 O H M 6 0 V O LTS T h e s e T M O S FETs a re d e s ig n e d fo r lo w v o lta g e ,

Contextual Info: IRFD1Z3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)400m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)3.2# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ

IRFD1Z3

Abstract: IRFD1Z0 TA17451 TB334
Contextual Info: IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate

irfd1z3

Abstract: TA17451
Contextual Info: tyvvys S IRFD1Z0, IRFD1Z1, IRFD1Z2, IRFD1Z3 Semiconductor y y 0.4A and 0.5A, 60V and 100V, 2.4 and 3.2 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.4A and 0.5A, 60V and 100V • Nanosecond Switching Speeds These are N-Channel enhancement mode silicon gate

MO-001

Abstract: TO-251 Outline TO-251AA
Contextual Info: International j«»|Rectifier HEXFET Power M O SFE T s Plastic Insertable Package HEXDIP N-Channel Part Number Vos Draln Source Voltage Volts IRFD015 IRFD014 IRFD025 IRFD024 60 IRFD1Z3 IRFD113 IRFD123 80 IRFD1Z0 IRFD110 IRFD120 100 IRFD213 IRF0223 IRFD210

IRFD1ZO

Abstract: IRFD1Z1 D-1-Z
Contextual Info: H a r r is IRFD1Z0, IRFD1Z1 IRFD1Z2, IRFD1Z3 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package Features 4 -P IN D IP • 0.4A and 0.5A, 60V - 100V T O P VIEW • rDS on = 2 .4 0 and 3 .2 0 • SOA is Power-Dissipation Limited □

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

4311 mosfet transistor

Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Contextual Info: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRFD110

Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5

IRF8C30

Abstract: MFE9200 1RFBC40 1RFZ40 IRFD9010 IRFZ30 IRFAF50 IRFAF52 IRFAG50 IRFBC32
Contextual Info: 257 - f M « tt fi ± £ Vd s or € t h fë Ta=25t3 Vg s * /CH Vd g (V) Id (V) (A) m m 1GSS Pt> V g s th) 1DSS (nA) (W) (MA) Vd s (V) (V) (V) '14 (Ta=25°C) Ciss Vd s = Vg s * /CH Vg s (V) ft Id (mA) Coss Crss Vg s -O (max) *typ V g s ( 0 ) (V) Id (A) *typ

1rf740

Abstract: 1RF840 1rf730 IRF810 1RF640 1RFD110 IRF9613 irf9620 IRF9640 IRFI13
Contextual Info: - 254 - f M £ tt ft X Vd s or € £ Vg s < T a = 2 5 cC Id Pd ÏI Ig s s Id s s Vg s th) % Vi>s= ft Ta=25‘ C) I d (on) D s(o n ) g fs Ciss Coss Crss (*typ) (* typ) (*typ) * /CH min Vg s m m ax Vd s (max) 1D (nA) (max) (max) (max) (pF) (pF) (pF) $1-

irf0014

Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
Contextual Info: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

1rf730

Abstract: IRF9120 1rf9530 1RF640 1rf830 1RF840 IRF9512 IRF9141 IRF9523 IRF843
Contextual Info: - * sy i± € A Vds or £ * Vd g % V £ Vg s is Id Pd m m (Ta=25"C) less VG S th) I dss Vds= ft i# 14 b(on) Ds(on) g fs Ciss Coss Crss (*typ) (*typ) (*typ) (V) (A) * /CH (nA) m Vg s (V) ( M A) Vd s (V) min ma x (V) (V) (max) Id (mA) (max) (max) (max) (pF)

1RFD110

Abstract: 1RF840 IRFA1Z0 IRFP120 IRFP230 1RF740 1RF9641 1RF640 IRFP150 IRF641
Contextual Info: - 275 f m ± t £ tt £ Vd s or Ta=25<C Vg s • f Vd g h (V) (V) ee. 1GSS Pd Id * /CH * /CH (A) m V g s th) 1DSS Vg s (V) (HA) Vd s (V) (V) t± (Ta=25°C) Id (mA) fv) urss Coss Ciss Vd s = Vg s max (nA) ft ii l ft & m % V g s =0 (max) *typ (0) *typ (A)

IRF9120

Abstract: 1rf740 1rf730 IRF9223 1RF840 IRF9122 IRF9121 LM3661TL-1.25 IRF713 l 9143
Contextual Info: - 25 4 - f M tt £ ft Vd s or € X £ Vg s V Id Pd * /CH Vd g % fé <Ta=25cC ) (V) (A) ÏI Ig s s Vg s th) Id s s * /CH min (nA) m Vg s (V) ( HA ) Vd s (V) (V) Vi>s= Vg s max (V) % 1D (nA) ft (Ta=25‘ C) Id (on) Ds(on) g fs Ciss Coss Crss Vg s =0 (max)

IRF510

Abstract: irf540
Contextual Info: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5

1RF640

Abstract: 1rf740 irf810 1RF540 1RF840 IRFAE50 1RF630 IRF612 irf9620 IRF530
Contextual Info: - 253 f m * V Vd s £> tt £ £ Vg s Id Igss Pd V g s th loss or € * Vdg Hr V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) F Ds(on) Vd s = Vg s Id (mA) 14 ft eg. tS (Ta=25*0) (Ta=25T3) lo(on) Ciss g fs Coss ft & 11 m Vg s =0 (max)