IRFP142 Search Results

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

IRFP140R

Abstract: IRFP142R IRFP143R CI 6264 IRFP142 IRFP141R f 6267 9l 15a
Contextual Info: Rugged Power M _ IRFP140R, IRFP141R, IRFP142R, IRFP143R File Num ber 2086 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0 .0 8 5 0 and 0.110 N-CHANNEL ENHANCEMENT MODE

Contextual Info: 4305271 D o s m a s STB • H a r r is HAS IRFP140R, IRFP141R IRFP142R, IRFP143R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 27A and 31 A, 80V - 100V • ros on = 0.0770 and 0.099ÎÎ DRAIN (TAB) • Single Pulse Avalanche Energy Rated

Contextual Info: i H A R R IRFP140, IRFP141, IRFP142, IRFP143 i s s e m i c o n d u c t o r 27 A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

irfp140

Abstract: IRFP141 IRFP142 IRFP143
Contextual Info: i h a ” r r IRFP140, IRFP141, IRFP142, IRFP143 i s " I O O N ° “ C T ° " 27A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V These are N-Channel enhancement mode silicon gate

IRFP140

Abstract: IRFP141 IRFP143 IRFP142 IRFp1401
Contextual Info: HE D I MäSS4Sa 000Ö7E0 4 | Data Sheet No. PD-9.442B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I O R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED' HEXFET TRANSISTORS IRFP140 IRFP141 IRFP142 :r N-CHANNEL IRFP143 100 Volt, 0.077 Ohm HEXFET TO-247AC TO-3P) Plastic Package

IRFP140R

Abstract: st3pf 142R
Contextual Info: HARRIS IRFP140R, IRFP141R IRFP142R, IRFP143R N-Channel Power MOSFETs Avalanche Energy Rated A u g u s t 1991 Features Package TO-247 TOP VIEW • 2 7 A and 31 A, 80 V - 1 0 0V • rDS on = 0 .0 7 7 ÎÏ and 0 .0 9 9 f i • Single Pulse A valanche Energy Rated

Contextual Info: IRFP142 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)26 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)

irfp140

Abstract: IRFp1401 160UH IRFP141 IRFP142 IRFP143
Contextual Info: IRFP140, IRFP141, IRFP142, IRFP143 S E M I C O N D U C T O R 27A and 31A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRFP040

Abstract: IRFP141 IRFP142 IRFP143 IRF9613 irfp245 IRF9620 IRF9632 IRF9643
Contextual Info: HEXFET Power MOSFETs International S Rectifier Plastic Insertable Package TO-220 P-Channel s Drain Source Voltage Volts Vq Part Number RDS(on) On-Siate Resistance (Ohms) I q Continuous Drain Current 25°C Case (Amps) 'D M Pu'*« Drain Current (Amps) P q Max

IRF9610

Abstract: IRFP143 IRF9612 IRFP240 THOMSON DISTRIBUTOR 58e d IRFP142 IRFP141 IRFP243 THOMSON 58E THOMSON 58E CASE OUTLINE
Contextual Info: SflE D THOMSON/ DI STR IBUTOR • TnEhfl?3 0005003 ■ TCSK International SR ecB fier HEXFET Power MOSFETs Plastic Insertable Package TO-220 P-Channel Part Number Vos Drain Source Voltage Volts IRF9512 IRF9510 IRF9522 IRF9520 IRF9532 IRF9530 IRF9542 IRF9540

1rfp240

Abstract: 1RFP340 1RFP360 IRFP310 IRFP232 1rfp254 IRFP240 IRFP141 IRFP321 IRFP151
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V ) fë 1 (T a= 2 5 °C ) Id Pd * /CH * /CH (A ) (W) Ig ss (n A ) Vg s I d ss Vg s (V ) th ) m in max (V ) (V ) ma) (V ) (n A ) fè F D s (o n ) Vd s = Vg s Id Vd s ( ft % g fs Io (o n ) C is s Coss C rss

IRF150 To220 package

Abstract: irf150 to220 IRFP240 xg32 ULTRA FAST RECOVERY RECTIFIERS to-220 irf64d to-3p 1500V IRF122 IRF123 IRF131
Contextual Info: FREDERICK COMPONENTS MIE 3> • 37n4ñS Q0D01b3 5 M F C I A CORTON CO M PA N Y C POWER MOSFETs P ART-N O IRF120 IRF122 IRF123 IRF130 IRF131 IRF132 IRF133 IRF140 IRF141 IRF142 IRF143 IRF150 IRF151 IRF152 IRF153 IRF220 IRF221 IRF222 IRF223 IRF230 IRF231 IRF232

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

MTM13N50E

Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”

1RF9640

Abstract: IRFP120 IRFP123 IRFP143 IRFA1Z0 IRFP220 IRFP230 IRFP142 TO-3P IRFP121
Contextual Info: - 298 - f m % *± € i m ± £ f é T a - 2 5 ^ ft V Vd s Vg s or Vdg Id Pd ♦ /CH (V) (A) I g ss Vg s th ) I dss * /CH (nA) Vg s (V) ( ma) Vd s (V) min max (V) (V) % Id (mA) (T a = 2 5 ^ ) (ft RD s(on) Vd s= Vg s Io (o n ) C is s g fs Coss C rss 5* B

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

1rfp360

Abstract: IRFP143 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP141 IRFP151 IRFP153 IRFP241
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V) fë 1 (Ta=25°C) Id Pd * /CH * /CH (A) (W) Ig ss (nA) V g s th) Id ss Vg s (V) min max (V) (V) a ) (V) (nA) fè FD s ( o n ) Vd s = Vg s Id Vd s (m ft % g fs Io(on) Ciss Coss Crss * B m % Vg s =0 (max)

SSH60N06

Abstract: IRFP141 IRFP142 IRFP143 Irfp250 irfp254 IRFP230 IRFP242 IRFP130 IRFP333 SSH40N15A
Contextual Info: POWER MOSFETs FUNCTION GUIDE TO-3P N-CHANNEL BVdss V ID(onXA) RDS(onXG) Part Number 60.00 60.00 60.00 0.03 0.025 SSH60N06 SSH60N06A 80.00 12.00 14.00 25.00 28.00 34.00 40.00 0.23 0.16 0.10 0.077 0.080 0.055 IRFP133 IRFP131 IRFP143 IRFP141 IRFP153 IRFP151

IRF540

Abstract: IRFP140 IRF540-3 IRFp1401 IRF541 IRFP141 IRF540 n-channel MOSFET IRF542 IRFP14U IRFP140-3
Contextual Info: IRF540/541/542/543 IRFP140/141/142/143 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 L o w e r R ds ON Im p ro v e d in d u c tiv e ru g g e d n e s s F a s t s w itc h in g tim e s R u g g e d p o ly s ilic o n g a te c e ll s tr u c tu r e

1RFD110

Abstract: 1RF840 IRFA1Z0 IRFP120 IRFP230 1RF740 1RF9641 1RF640 IRFP150 IRF641
Contextual Info: - 275 f m ± t £ tt £ Vd s or Ta=25<C Vg s • f Vd g h (V) (V) ee. 1GSS Pd Id * /CH * /CH (A) m V g s th) 1DSS Vg s (V) (HA) Vd s (V) (V) t± (Ta=25°C) Id (mA) fv) urss Coss Ciss Vd s = Vg s max (nA) ft ii l ft & m % V g s =0 (max) *typ (0) *typ (A)

IRF540

Abstract: irfp140
Contextual Info: S A MS UN G E L E C T R O N I C S INC b4E ]> • 7^4142 IRF540/541/542/543 IRFP140/141 /142/143 «sriGK N-CHANNEL POWER MOSFETS FEATURES • • • • • • • 00121b3 TO-220 Lower R ds o n Improved inductive ru gge d n e ss Fast sw itching tim es