IRFP220
Abstract: IRFP222 IN 414b B diode IRFP223
Contextual Info: 7964142 -•••• . SAMSUNG SEMICONDUCTOR I 7 ^ 4 1 4 5 DOGSI b IRFP220/221/222/223 DE i IN C □ 9 8 D 0 5169 | D7 ^ 39- / / N-CHANNEL POWER MOSFETS FEATURES Low RoS on Improved inductive riiggedness Fast switching times Rugged polysilicon gate cell structure
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OCR Scan
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irfp220/221/222/223irfp220irfp221irfp222+3irfp22300gs435in 414b b diode
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1RF9640
Abstract: IRFP120 IRFP123 IRFP143 IRFA1Z0 IRFP220 IRFP230 IRFP142 TO-3P IRFP121
Contextual Info: - 298 - f m % *± € i m ± £ f é T a - 2 5 ^ ft V Vd s Vg s or Vdg Id Pd ♦ /CH (V) (A) I g ss Vg s th ) I dss * /CH (nA) Vg s (V) ( ma) Vd s (V) min max (V) (V) % Id (mA) (T a = 2 5 ^ ) (ft RD s(on) Vd s= Vg s Io (o n ) C is s g fs Coss C rss 5* B
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OCR Scan
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ta-251rf9632o-2201rf9633+12t0-2201rf96401rf9641irfp120irfp123irfp143irfa1z0irfp220irfp230irfp142to-3pirfp121
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1rfp360
Abstract: IRFP143 1rfp254 IRFP240 irfa1z0 IRFP230 IRFP141 IRFP151 IRFP153 IRFP241
Contextual Info: - M tt % f ft ± ï Vd s or i Vd g k V £ £ Vg s (V) fë 1 (Ta=25°C) Id Pd * /CH * /CH (A) (W) Ig ss (nA) V g s th) Id ss Vg s (V) min max (V) (V) a ) (V) (nA) fè FD s ( o n ) Vd s = Vg s Id Vd s (m ft % g fs Io(on) Ciss Coss Crss * B m % Vg s =0 (max)
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OCR Scan
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o-247acirfp141irfp14t0-247ac+13irfpi41irfp142irfp143irfp150irfp1521rfp3601rfp254irfp240irfa1z0irfp230irfp151irfp153irfp241
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1RFD110
Abstract: 1RF840 IRFA1Z0 IRFP120 IRFP230 1RF740 1RF9641 1RF640 IRFP150 IRF641
Contextual Info: - 275 f m ± t £ tt £ Vd s or Ta=25<C Vg s • f Vd g h (V) (V) ee. 1GSS Pd Id * /CH * /CH (A) m V g s th) 1DSS Vg s (V) (HA) Vd s (V) (V) t± (Ta=25°C) Id (mA) fv) urss Coss Ciss Vd s = Vg s max (nA) ft ii l ft & m % V g s =0 (max) *typ (0) *typ (A)
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OCR Scan
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taz25cc1rf640o-220abirf641+121rf642irfpi41irfp142irfp1431rfd1101rf840irfa1z0irfp120irfp2301rf7401rf9641irfp150
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