IRFP150 Search Results

035H

Abstract: IRFPE30 50V 10A ultra fast diode
Contextual Info: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

IRFP150N

Contextual Info: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,

IRFP150

Abstract: C4023 GC527 IRFP150FI c2814 TC08 Tc03s
Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E » • TTbHma N-CHANNEL POWER MOSFETS IRFP150/1511152/153 FEATURES • • • • • • • D Q 1 2 3 Ü 4 l b 1* ■ SMGK TO-3P Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

irfp150

Contextual Info: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP150N

Abstract: IRF1310N AM 22A irf 9246 IRF 450 MOSFET 4.5V TO 100V INPUT REGULATOR
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1503 IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G

TsE 151

Abstract: transistor irfp IRFP152 IRFP150 IRFP 150fi IRFP P CHANNEL IRFP150FI IRFP151 IRFP transistors
Contextual Info: _ 30E D m 7CJ2C1537 GQS^ÖSS 2 • ^ T 7'3 0 |-|3 7 SCS-THOMSON Mmi[LEg¥[E«P g§ L 1 _ S" TH0MS0N TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Vpss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V IRFP 150/FI-151/FI IRFP 152/FI-153/FI

Contextual Info: PD - 95003 IRFP150PbF • Lead-Free 2/11/04 Document Number: 91203 www.vishay.com 1 IRFP150PbF Document Number: 91203 www.vishay.com 2 IRFP150PbF Document Number: 91203 www.vishay.com 3 IRFP150PbF Document Number: 91203 www.vishay.com 4 IRFP150PbF Document Number: 91203

mosfet IRF 3306

Abstract: IRFPI50 IRPF IRFP151 ocr31 transistor irfp 100-C IRFP150 IRFP152 IRFP153
Contextual Info: Standard Power M O S FE T s • IRFP150, IRFP151, IRFP152, IRFP153 File Number Power MOS Field-Effect Transistore N-Channel Enhancement-Mode Power Field-Effect Transistors 34 A and 40 A, 60 V - 100 V rDsioni = 0.055 Q and 0.08 fi N-CHANNEL ENHANCEMENT MODE

ST hexfet to 247

Abstract: TO-247AC Package igbt lead assignments 035H IRFPE30 irfp150npbf
Contextual Info: PD - 95002 IRFP150NPbF • Lead-Free www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches

irfp150

Abstract: mosfet ir 250p
Contextual Info: International ioR Rectifier HEXFET Power MOSFET “ l,8SS,S5 0D1SMtb D3T PD-9.441D IIN R IRFP150 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling

IRFP150N

Abstract: 65e9 65E8 AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRFP150N Data Sheet January 2002 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.030Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

IRFP150N International Rectifier

Abstract: irfp150n Mosfet IRFP150N
Contextual Info: P D - 9.1503 International IGR Rectifier IRFP150N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • V d ss = 100 V 175°C O perating Tem perature • Fast Switching • Fully Avalanche Rated R ü S o n = 0.036Í2

IRFP150

Contextual Info: Транзисторы для силовой электроники ПОЛЕВЫЕ ТРАНЗИСТОРЫ КП150 IRFP150 N-канальный МОП ПТ Uси=100 В; Rси=0.055 Ом; Iс=38 А z Высокие динамические характеристики

Contextual Info: N-CHANNEL POWER MOSFETS IRFP150/151 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

IRFP150N

Abstract: IRF1310N TO-247AC Package Mosfet IRFP150N 4.5v to 100v input regulator
Contextual Info: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

IRFP150R

Abstract: IRFP152R J50 mosfet Transistors MBI DC converter 50A 100V IRFP152 IRFP151R IRFP153R S-20 TO247 package dissipation
Contextual Info: _ Rugged Power MOSFETs File Num ber 2015 IRFP150R, IRFP151R, IRFP152R, IRFP153R Avalanche Energy Rated N-Channel Power MOSFETs 33A and 40A, 60V-100V fDs on = 0.0550 and 0.080 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

international rectifier NE 22

Contextual Info: PD - 9.1503B International IGR Rectifier IRFP150N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V R ü S o n = 0.03612

IRFP150

Abstract: TA17431 IRFP151 IRFP153 IRFP152 TB334 12V 40A motor Relay 170uH
Contextual Info: IRFP150, IRFP151, IRFP152, IRFP153 Semiconductor 34A and 40A, 60V and 100V, 0.055 and 0.08 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 34A and 40A, 60V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFP150A Advanced Power MOSEET FEATURES B V DSS - 1 00 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 4 ^ • Lower Input Capacitance lD = 4 3 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V

IRFP150

Abstract: application notes irfp150 IRFP150P
Contextual Info: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: IRFP150 Semiconductor Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of