9442 Search Results

IRF (10A) 55V

Abstract: IRF2805L IRF2805S 005-T-1 135AV
Contextual Info: PD - 94428 IRF2805S IRF2805L AUTOMOTIVE MOSFET Typical Applications ● ● ● ● HEXFET Power MOSFET Climate Control ABS Electronic Braking Windshield Wipers D VDSS = 55V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

irf300

Contextual Info: PD -94424 IRF3007 AUTOMOTIVE MOSFET Typical Applications ● HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Features ● ● ● ● ● Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD -94424A IRF3007 AUTOMOTIVE MOSFET Typical Applications ● HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Features ● ● ● ● ● Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

MS3452

Contextual Info: MS/Standard MS3452 box mounting receptacle Receptacle Shell, Flange Box Mount, Threaded Coupling Military No. MS3452 Amphenol/Matrix No. 9442 To complete order number see how to order, page 29. Shell Size* A ±.031 B C Dia. 8S 10S 10SL 12 12S 14 14S 16 16S

IRf2805 equivalent

Abstract: irf 5110 IRF2805
Contextual Info: PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications l D Climate Control, ABS, Electronic Braking, Windshield Wipers VDSS = 55V Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching

C-150

Abstract: IRFI840G IRGIB6B60KD PD944
Contextual Info: PD-94427C IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

9442

Contextual Info: 9442 Issue : MALE RECEPTACLE FOR P.C.B PACKAGING PER 100 Series : SMB CO CO o o c h-H a F3 1 0.291 0.114 7.4 (2.9) / ID CD O 'S — - CPERÇAGE PANNEAU) (MOUNTING HOLD . & B DIA 5 holes MM maxi Imini A 2.59 2.49 B 1.4 1.3 C 5.16 Î5 INCH maxi mini 0.10c 0.1

C-150

Abstract: IRGIB6B60KD
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

MS3452

Contextual Info: MS/Standard MS3452 box mounting receptacle Receptacle Shell, Flange Box Mount, Threaded Coupling J Coupling Thread A Typ. Military No. MS3452 Amphenol/Matrix No. 9442 Blue Color Band Polarizing Key B Typ. E Dia. Max C Dia. 4 Holes G F B Typ. D Max. L Dia.

IRF3007

Abstract: IRF300
Contextual Info: PD -94424A IRF3007 AUTOMOTIVE MOSFET Typical Applications ● HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Features ● ● ● ● ● Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRF2805L

Abstract: IRF2805S
Contextual Info: PD - 94428 IRF2805S IRF2805L AUTOMOTIVE MOSFET Typical Applications ● ● ● ● HEXFET Power MOSFET Climate Control ABS Electronic Braking Windshield Wipers D VDSS = 55V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

Contextual Info: PD-94427A IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

irf7380

Abstract: AN1001
Contextual Info: PD - 94420A IRF7380 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

MH26206

Abstract: MH17478 9485PC 9485P ASTM D-3330 kraft paper technical water dispenser 9442 9482PC UL-746C silicone
Contextual Info: 3 Adhesive Transfer Tapes with Adhesive 350 9442 • 9445 • 9482PC • 9485PC • 9485EK • 9675 Technical Data Product Description Construction September, 2002 These 3M Adhesive Transfer Tapes with 3M™ Adhesive 350 are a modified acrylic adhesive ideal for very high-bond strength to many surfaces. They have excellent

Contextual Info: PD - 94428 IRF2805S IRF2805L AUTOMOTIVE MOSFET Typical Applications ● ● ● ● HEXFET Power MOSFET Climate Control ABS Electronic Braking Windshield Wipers D VDSS = 55V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance

Contextual Info: PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications l D Climate Control, ABS, Electronic Braking, Windshield Wipers VDSS = 55V Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching

IRF2805

Abstract: IRf2805 equivalent
Contextual Info: PD - 94428 IRF2805 AUTOMOTIVE MOSFET HEXFET Power MOSFET Typical Applications l D Climate Control, ABS, Electronic Braking, Windshield Wipers VDSS = 55V Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching

AN1001

Abstract: EIA-541 F7101 IRF3000 IRF7101
Contextual Info: PD- 94423 IRF3000 SMPS MOSFET HEXFET Power MOSFET VDSS Applications High frequency DC-DC converters l Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

C-150

Abstract: IRGIB6B60KD ANSI PD-94427D
Contextual Info: PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

IRF3007

Abstract: IRF300
Contextual Info: PD -94424A IRF3007 AUTOMOTIVE MOSFET Typical Applications ● HEXFET Power MOSFET 42 Volts Automotive Electrical Systems D Features ● ● ● ● ● Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

Contextual Info: PD - 94420A IRF7380 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001

B1370 transistor

Abstract: B1370 b1370, transistor transistor b1370 r b1370 transistor b1370 e B1370 E 400
Contextual Info: PD-94427B IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

str 12006

Contextual Info: Australia Adilam Electronics Pty Ltd 3. Nicole Close P. O. Box 664 BAYSWATER 3153 Tel. 03 761 44 66 Fax 03 761 41 61 Israel Green Composant Electroniques 12 Avenue Mireille F - 94420 LE PLESSIS TREVISE Tel. 45 94 14 24 Fax 45 93 21 43 Austria Katronik Kirchgasse 17

Contextual Info: TECHNICAL DATA COAXIAL CONNECTORS FEMALE-FEMIALE ADAPTOR R127.712.001 Issu e : 9442 Page 1/ 1 S e r ie s : SMA 2.9 holes DIA 0.313 .102 PERÇAGE PANNEAU B DIA 4 holes INCH MM maxi A 6.45 B 2.7 C B. E9 (0 1 6 ) CABLES mini maxi mini 6.35 0.254 0.25 2.6 o.ioq 0.10c