4FLSS452 Search Results

1RF9540

Abstract: c346 diode IRF9540 complementary c343 diode IRF3542 IRF9S40 IRF9540 irf354 diode c345 f*9540
Contextual Info: HE 0 I 4flSS452 QQDââ^M 3 | Data Sheet No. PD-9.421A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRF9540 IRF9541 P-CHANNEL 1GOVOLT POWER MOSFETs IRF3542 IRFS543 -1 0 0 Volt, 0.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

4AF2

Abstract: 4af05 4af1 ir 4AF Series 21PT20 4AF2 IR 636A2 21PT40 21PT 21PT10
Contextual Info: INTERNA TIO NAL RECTIFIER 4655^52 55 INTERNATIONAL DE § 4flSS452 O D O M ' m 55C R EC TIFIER fl f D 04931 Data Sheet No. PD-2.085 INTERNATIONAL RECTIFIER IO R SiPT SERIES SO Amp Encapsulated Rectifier Diodes Major Ratings and Characteristics Units •f AV

1RF460

Abstract: 1RF450 PD5020
Contextual Info: HE D I 4flSS452 0000770 5 I „ . «. * », • ■ Preliminary Data Sheet No. PD-5.020A IN T E R N A T IO N A L R E C T IF IE R INTERNATIONAL RECTIFIER IOR T-39-27 H E X F E T Pow er M odule CPW 200-Series Power H-Brldges The CPY200 series of power modules are Hbridge full-bridge configured HEXFETs, in a

ic laf 0001

Abstract: LAF 0001 laf 0001 power IR LFN IRGTI200F06 200A 600V FET 2S0240 50PCL
Contextual Info: International n Rectifier PD-9.968B IRGTI200F06 "HALF-BRIDGE" IGBT INT-A-PAK Fast Speed IGBT VCE = 600V .R ugged Design .Sim ple gate-drive .F as t operation up to 10KHz hard switching, or 50K H z resonant .Switching-Loss Rating includes all "tail" losses

RF530

Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Contextual Info: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS

Contextual Info: PD - 9.690A bìtemational gH Rectifier IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to400 Hz See Fig. 1 forCurrentvs. Frequency curve

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

Contextual Info: International BUlRectifier IRGPC50S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT PD - 9.694A Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400Hz See Fig. 1 for Current vs. Frequency curve

Contextual Info: PD 1.025D International IQR Rectifier Series PVD33 Microelectronic Power IC Relay Single-Pole, 220mA, 0-300V DC BOSFET Photovoltaic Relay General Description PVD33 Features The Photovoltaic DC Relay PVD is a single-pole, nor­ mally open solid state replacement for electro-me­

Contextual Info: International la g R ectifier • HEXFET Power MOSFET INTERNATIO NAL R E C T IF IE R • • • • • 465545E 0Q14RflO DE7 « I N R PD-9.607A IRFBF20 Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements

200A1

Abstract: HFA45HC60C k25 rectifier transistor k31
Contextual Info: PD-2.368 International S Rectifier HEXFRED Provisional Data Sheet HFA45HC60C 600V, 45A ULTRA FAST, SOFT RECOVERY DIODE Features: Major Ratings and Characteristics Characteristics — — — — — — — — — Units Vbr per leg 600 V lF(AV) 45* A

8ohm LS

Abstract: mosfet 600V 100A ST 0q2207 irgti0100m12 68OHM 1 GBT 400 A 1200V
Contextual Info: Preliminary Data Sheet No. PD-9.924 irgtioioomi2 SË*] R ectifier "HALF-BRIDGE" INT-A-PAK MODULES Fast™ IGBT VCE = 1200V ^C DC = 1 .Rugged Design •Simple gate-drlve • Fast operation up to 10 kHz hard switching, or 50 kHz resonant • Switching-Loss Rating includes all "tail"

Contextual Info: International B Rectifier HEXFRED Provisional Data Sheet PD-2.361 HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M ajor Ratings and Characteristics per Leg Characteristics Units Vr 1200 V 8 .0 A V rrm I f AV) trr (typ) 28 ns Q rr (typ) 140 nC I rrm (typ)

Contextual Info: PD - 9.1117 International ¿ r Rectifier IRGPH40FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features Fast CoPack IGBT V CES = 1200V • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes

Contextual Info: PD - 9.1257C International l R Rectifier IR L M L 2 4 0 2 HEXFET Power MOSFET • • • • • • • Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1 mm Available in Tape and Reel Fast Switching

IRFR9010

Abstract: irfu9010 IRFR9012 IRFU9012 IRFR9010TR HMSC
Contextual Info: he d | Nass4sa ooaaBoa i | Data Sheet No. PD-9.516A I N T ERNATIONAL R E C T IFIER INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFRSOIO IRFRS01S IRFU9010 IRFU9Q1S P -C H A N N E L Product Summary - 5 0 Volt, 0.50 Ohm HEXFET

Contextual Info: STE D • 4Ô55452 ÜD12SEG IN T E R N A T IO N A L 144 ■ IN R PD-2.267 R E C T IF IE R International [ior] Rectifier 32CTQ030 SCHOTTKY RECTIFIER 30 Amp Description/Features Major Ratings and Characteristics 32CTQ030 Units Characteristics lF AV Rectangular

1RFAF40

Abstract: irfaf42 dts110
Contextual Info: HE D I 4Ö554S2 GQDci 57 G 4 | Data Sheet No. PD-9.581A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-13 REPETITIVE AVALANCHE AND dv/dt RATED IRFAF4Q IRFAF4S HEXFET TRANSISTORS N-CHANNEL Product Summary 900 Volt, 2.5 Ohm HEXFET TO-204AA TO-3 Hermetic Package

0D3G2

Contextual Info: Bulletin 127141 rev. C 09/97 International IOR Rectifier IRK.91 SERIES STANDARD DIODES NEWADD-A-pak Power Modules F e a tu re s • E lectrica lly isolated : D B C b a s e p late ■ 3 5 0 0 V RMS Isolating v o lta g e ■ S ta n d a rd J E D E C p ac kag e

TO218AB package

Abstract: 28CPQ 28CPQ030 28CPQ040 28CPQ050 28CPQ060 pee1010 2068-A
Contextual Info: SS INTERNATIONAL RECTIFIER 4855452 dF | 4 B S S 4 S 5 0DDSQÖ3 7 55C 0 5 0 8 3 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.068A ~T~ 1 INTERNATIONAL RECTIFIER 3 ~ Ô 7 IOR S8CPQ SERIES 5 8 A m p Dual Sc h o ttk y Center Tap Rectifiers Major Ratings and Characteristics

hfa120fa60

Contextual Info: PD -5.531 International I R Rectifier HFA120FA60, HFA120EA60 HEXFRED" Ultrafast, Soft Recovery Diode V R = 6 0 0 V V F ty p . * = 1 .4 V If(a v ) = 6 0 A Q rr ( t y p . ) = 2 7 0 n C lR R M ( ty p .) = 7 . 0 A trr(ty p -) = 6 5 n s di(rec)M/dt ( ty p .)*

Contextual Info: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET

Contextual Info: MflSSHSS QülHfl'îü □'IS m i m International Rectifier _IRF9630 INTERNATIONAL RECTIFIER HEXFET Pow er M O S F E T • • • • • • PD-9.352F Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Simple Drive Requirements

Contextual Info: Bulletin 125196/A International 1 r]Rectifier su 200c.k s e r ie s PHASE CONTROL THYRISTORS Hockey Puk Version Features C e n t e r a m p lify in g g a te M e t a l c a s e w ith c e r a m ic in s u la to r In t e r n a tio n a l s ta n d a r d c a s e A - 2 4 K - P U K