4SS54S2 Search Results

1N3086

Abstract: 4SS54S2
Contextual Info: INTERNATIONAL RECTIFIER 5bE D • 4SS54S2 □□10b7 a 4 international Iis r I Rectifier Rectifiers, Standard Recovery 100 TO 200 AMPS Part RRM FSM (1 50Hz 60Hz 'F(AV) number (V) 1N3288A 1N3289A 1N3290A 1N3291A 1N3292B 1N3293A 1N3294A 1N3295A 1N3296A 150K5A

IGBT 500V 50A

Abstract: mosfet 600V 50A diode C435 50a rectifier circuit mosfet 500V 50A
Contextual Info: International S Rectifier Provisional Data Sheet PD-9.1151 IRGNIN050M06 "CHOPPER" IGBT INT-A-PAK Low conduction loss IGBT VŒ = 600V lc = 50A V ce ON < 2.0V .Rugged Design •Simple gate-drive .Switching-Loss Rating includes all "tail“ losses .Short circuit rated

Contextual Info: PD-9.1068 In te rn atio n al Rectifier_ 1RF740LC HEXFET Power MOSFET • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Ciss, Cos& Crss Extremely High Frequency Operation Repetitive Avalanche Rated

IRFI840GLC

Contextual Info: PD-9.1208 International i » r Rectifier IRFI840GLC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm

Contextual Info: PD-9.928 International lili] Rectifier IRGVH50F INSULATED GATE BIPOLAR TRANSISTOR Fast-Speed IGBT • • • • • • Hermetically sealed Isolated Latch-proof Simple gate drive High operating frequency Switching-loss rating includes all “tail” losses

Contextual Info: Provisional Data Sheet No. PD - 9.1393C International IGR Rectifier IRHM7264SE R E P E T IT IV E A V A LA N C H E A N D d v / d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11Q, (SEE) RAD HARD HEXFET

Contextual Info: International [îô^Rectifier HFA105NH60R H EXFRED " Ultrafast, Soft Recovery Diode PD-2.443 LUG TERMINAL CATHODE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters V r = 600V V f = 1.5V i T i Qrr* = 1200nC

Contextual Info: PD-9.1002 international io r Rectifier IRFI744G HEXFET Power MOSFET • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance V qss - 4 5 0 V ^DS on = 0.63£2