0D3G2 Search Results

C1000B

Abstract: 3020C
Contextual Info: KM416C1000BT ELECTRONICS CMOS DRAM 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: Bulletin 12036 08/94 International i « r Rectifier s d 8500C.r s e r i e s STANDARD RECOVERY DIODES Hockey Puk Version Features 9570A • W ide current range ■ High voltage ratings up to 6 0 0 V ■ High surge current capabilities ■ D iffused junction

0D3G2

Contextual Info: Bulletin 127141 rev. C 09/97 International IOR Rectifier IRK.91 SERIES STANDARD DIODES NEWADD-A-pak Power Modules F e a tu re s • E lectrica lly isolated : D B C b a s e p late ■ 3 5 0 0 V RMS Isolating v o lta g e ■ S ta n d a rd J E D E C p ac kag e

C4368

Contextual Info: F# CYPRESS CY7C43626 CY7C43636/CY7C43646 CY7C43666/CY7C43686 PRELIM INARY 2 5 6 /5 1 2 / 1 K / 4 K / 1 6 K Features x 3 6 / x 1 8 x 2 T ri B u s F IF O Fully asynchronous and simultaneous read and write operation permitted Mailbox bypass register for each FIFO

Contextual Info: Bulletin 12122 rev. A 07/97 International IS R Rectifier SAFE/R Series 60EPS. INPUT RECTIFIER DIODE VF < 1V @ 30A * 'fsm = 950A VR RM800 to 1600V RRM Description/Features The 60EPS. rectifier SAFE/Rsexies has been optimized for very low forward voltage drop, with moderate leakage.

thyristor t23

Contextual Info: Bulletin 127130 rev. C 09/97 International IQ R Rectifier IRK.26 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR NEWADD-A-pak Power Modules Features DBC base 27 A • E le ctrica lly isolated: ■ 3 5 0 0 V RMS Isolating vo ltag e plate ■ S ta n d ard JE D E C package

6N0 953 235

Contextual Info: Preliminary Data Sheet microelectronics group Lucent Technologies Bell Labs Innovations ORCA OR3Cxx 5 V and OR3Txxx (3.3 V) Series Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 nm 4-level metal technology, with a migration plan to 0.25 urn

thyristor diode module IRK E78996

Abstract: IRK E78996 IRKT27 E78996 A2JS HALF WAVE RECTIFIER CIRCUITS high speed IRK THYRISTOR THYRISTOR MODULE
Contextual Info: Bulletin 127130 rev. C 09/97 International IQ R Rectifier IRK.26 SERIES THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR NEWADD-A-pak Power Modules Features • ■ ■ ■ ■ ■ Electrically isolated: DBC base plate 3 5 0 0 V RMS isola tin g vo ltag e S ta n d ard JE D E C package