IRF9541 Search Results

1RF9620

Abstract: 1RF9540 1RF9622 IRF9532 IRF9522 IRF9523 IRF9611 IRF9630 samsung IRF9613 IRF9240
Contextual Info: - W. f Ä * £ fê 13=25*0 m % tt % IRF9240 tR F 9 2 41 SAMSUNG SAMSUNG IRF9242 IRF9243 IRF9510 SAMSUNG SAMSUNG SAMSUNG 1RF9511 IRF9512 IRF9513 SAMSUNG SAMSUNG SAMSUNG 1RF9520 IRF9521 IRF9522 IRF9523 IRF953Ü IRF9531 IRF9532 IRF9533 IRF954Q IRF9541 íR F 9 542

1RF9540

Abstract: c346 diode IRF9540 complementary c343 diode IRF3542 IRF9S40 IRF9540 irf354 diode c345 f*9540
Contextual Info: HE 0 I 4flSS452 QQDââ^M 3 | Data Sheet No. PD-9.421A INTERNATIONAL R E C T IF IE R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRF9540 IRF9541 P-CHANNEL 1GOVOLT POWER MOSFETs IRF3542 IRFS543 -1 0 0 Volt, 0.2 Ohm HEXFET TO-220AB Plastic Package Product Summary

f9540

Abstract: irf9540 1RF9542
Contextual Info: h a r r IRF9540, IRF9541 IRF9542, IRF9543 i s Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package F e a tu re s T O -22 0 A B • -1 5 A and -1 9 A , -8 0 V and -1 0 0 V TOP VIEW • t q s ON “ 0 .2 0 n and 0 .3 0 H • Single Pulse A valanche Energy Rated

irf9540

Abstract: IRF9540 mosfet IRF9541 IRF9540 application MOSFET IRF9540 IRF9542 IRF9543 CI063
Contextual Info: Rugged Power MOSFETs IRF9540, IRF9541 IRF9542, IRF9543 File N u m b e r 2282 Avalanche-Energy-Rated P-Channel Power MOSFETs -15 A and -19 A, -60 V and -100 V fDsiom = 0.20 fi and 0.30 fi T E R M IN A L D IA G R A M Features: • S ingle pulse avalanche energy rated

f9540

Abstract: IRF9540 IRF9540 MOSFET
Contextual Info: HARRIS S E M I C O N D U C T O R IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20ft and 0.30ft, P-Channel Power MOSFETs January 1997 Features Description • -1 5A and -1 9A, -80V and -1 00V • High Input Im pedance

IRF9540

Abstract: IRF9542 to220ab package TA17521 IRF9541 IRF9542 IRF9543 RF1S9540 RF1S9540SM
Contextual Info: IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM Semiconductor -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and -19A, -80V and -100V These are P-Channel enhancement mode silicon gate

irf9540

Abstract: IRF9540 application IRF9541 IRF9542 data sheet IRF9540 IRF9540 mosfet irf9543 RF1S9540 RF1S9540SM
Contextual Info: IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM S E M I C O N D U C T O R -15A and -19A, -80V and -100V, 0.20Ω and 0.30Ω, P-Channel Power MOSFETs January 1997 Features Description • -15A and -19A, -80V and -100V • High Input Impedance The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and

IRF9540

Contextual Info: *f*32S IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, RF1S9540SM -15A and -19A, -80V and -100V, 0.20 and 0.30 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -15A and-19A ,-80V and-100V • High Input Impedance These are P-Channel enhancement mode silicon gate

Transistor c 4138

Abstract: TIP36 Application Note RFK25 IRF540 p channel
Contextual Info: IN T E G R A T E D C IR C U IT S y UNITRODE High Efficiency Regulator Controller FEATURES • Complete Control fo r a High Current, Low Dropout, Linear Regulator • Fixed 5V or Adjustable O utput Voltage • Accurate 2.5A C urrent L im itin g w ith Foldback

IRF9521

Abstract: IRF9612 irfbf30 9390 IRF830 International rectifier IRF9512 IRF9523 irfbe30 9351 IRFBG32
Contextual Info: PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D INTERNATIONAL. RECTIFIER MässMsa oüiassb s • IOR T - 3 ^ - 0 3 TO-220 Package N-CHANNEL Types VDS r D S 0N (max) Iq cont <0M PO T c - 2 5 °C pulsed max A W IRF840 0.85 8.0 3 2.0 125 IR F8 4 2 IRF83 0

57-3215

Abstract: MAX635XCPA MAX635XCSA MAX635XEJA MAX635XEPA MAX635XMJA MAX637E toroid iron power core reference table MAX636 equivalent
Contextual Info: 19-0918; Rev 0; 5/91 y i/ iy jx iy i/ i P reset/A djustable O utput CMOS in vertin g S w itch ing R egulators _ F e a tu re s ♦ Preset -5V, -12V, -15V Output Voltages Low power applications require only a diode, output filter capacitor, and a low-cost inductor. An additional

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

Contextual Info: yviyixiyi/1 P reset/A d ju s ta b le O u tp u t CM OS In v e rtin g S w itc h in g R eg u lato rs _ Features ♦ Preset -5V, -12V, -15V Output Voltages Low power applications require only a diode, output filter ca p a citor, and a low -cost inductor. An a d ditional

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

irf9540

Abstract: l 9143 irfp9140 IRFP9143 IRF9540 mosfet IRF9541 9142 ha 9141 9143 15a 50v p-channel mosfet
Contextual Info: SAMSUNG ELSTC^ONTCS IN C h4 E D WÊ 7 T b m M 2 IK I-y ö 4 Ü /»ö4 1 /y ö 4 2 /9 5 4 3 IRFP9140/914179142/9143 FEATURES • • • • • • • □□122bG GG E • SI1GK P-CHANNEL POWER MOSFETS TO-220 Lower Rds ON Improved inductive ruggedness Fast switching times

SSP6N60

Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
Contextual Info: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125

1RF9540

Abstract: l 9143 irf 409 IRF 9540 L 9141 IRF95XX IRF high current p-channel IRF9140 IRF9140 TO 220 IRF9540
Contextual Info: 7964142 SAMSUNG S E M I C O N D U C T O R INC Hfl DE 1 7 ^ 4 1 4 5 IRF9140/9141/9142/9143 IRFP9140/9141 /9142/9143 “ IRF9540/9541Z9542/9543_ ^ " D0GS40Ö t- P-CHANNEL POWER MOSFETS Preliminary Specifications - 1 0 0 Volt, 0.2 Ohm SFET PRODUCT SUMMARY

F954

Abstract: ST l 9143 F9540 IRF954 IRF9540 l 9143 fp 9141 irfp9140 9143
Contextual Info: IRF9540/9541 /9542/9543 IRFP9140/9141 /9142/9143 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 L ow e r R d s ON Im p ro ve d in d u ctive r u g g e d n e s s F a st s w itc h in g tim e s R u g g e d p o iy silic o n g a te cell stru ctu re

Contextual Info: y IN T E G R A T E D C IR C U IT B UNITRODE High Efficiency Regulator Controller DESCRIPTION The U C 1 8 3 5 /6 fa m ilie s of linear controllers, packaged in 8-pin m ini-dips, are optim ized fo r the design of low cost, low dropout, linear regulators. U sing an external pass elem ent,

Contextual Info: y i/iy jx iy n Preset/Adjustable Output CMOS Inverting Switching Regulators G eneral Description The MAX635/MAX636/MAX637 inverting switching regu­ lators are designed for minimum component DC-DC conversion in the 5mW to 500mW range. Low power applications require only a diode, output filter

siemens toroidal core

Abstract: T0451S100A 1mh inductor 1mh inductor design Siemens Ferrite B64290 MAX635 MAX635XCPA MAX635XCSA MAX635XEPA MAX636
Contextual Info: w iy jx iy i/i 19-0918; Rev 0; 5/91 P reset/A djustable O utput CMOS In vertin g S w itching R egulators General Description Features ♦ Preset -5V, -12V, -15V Output Voltages The MAX635/MAX636/MAX637 inverting switching regu­ lators are designed for minimum component DC-DC

1RF9540

Abstract: IRF9141 IRF9142 IRF9510 IRF9523 IRF9612 IRF9613 IRF9540 IRF9541 IRF9620
Contextual Info: - 25 6 - m a tt f m ± t Vg s t Vd s or Vd g % V (V) « Æ n fê (Ta=25^) Ig s s Pd Id * /CH * /CH (A) (W) V g s th) Id s s min (nA) Vg s (V) (UA) Vd s (V) (V) max (V) % Id (nA) Í# F Ds(on) Vd s = Vg s te (Ta=25t) b(Qn) Ciss g fs Coss Crss ft JE m m V g s =0

1RF630

Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Contextual Info: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)

1rf730

Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Contextual Info: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5