IRF822 Search Results

IRFB22

Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
Contextual Info: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E

N 821 Diode

Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
Contextual Info: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822

irf 44 n

Abstract: irf 44 ns IRF820 IRF 1040 IRF822FI IRF820FI IRF822 irf 460 IRF 820 IRF822/FI
Contextual Info: IRF820/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS on ID IRF820 IRF820FI TYPE 500 V 500 V < 3Ω < 3Ω 3A 2.2 A IRF822 IRF822FI 500 V 500 V < 4Ω < 4Ω 2.8 A 1.9 A • ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY

IRF822

Abstract: IRF820 IRF823 IRF821 Diode IRF820
Contextual Info: Standard Power M O SFETs- IRF820, IRF821, IRF822, IRF823 F ile N u m b e r 1581 Power MOS Fîeld-Effect Transistors N -CHANNEL ENHANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V

irc820

Abstract: irf transistors IRF 820 i821
Contextual Info: SGS-THOMSON ¡L IOT iOûS IRF820/FI-821/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF820 IRF820FI V dss I 500 500 R DS(on Id 3 Q 3 a 3 A 2.2 A 3 1) 3 a 3 A 2.2 A 4 n 4 il 2 .8 A V V IRF821 IRF821FI 450 V 450 V IRF822 IRF822FI 500

T1IG

Abstract: IAF820 IRF822 1RF822 IRF820 IRF821 IRF823 t 319 sti 5510
Contextual Info: Dl 3875081 G E SOLID 3Ö7SGÖ1 QQ1Ô374 b S T AT E 01E 18 374 - D T-3.9t 11 öianaara Kower M O SFET s IRF820, IRF821, IRF822, IRF823 File N um ber 1581 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode

D 823 transistor

Abstract: transistor IRF 450 821 transistor irf transistors irf821 IRF820 IRF820FI IRF821FI IRF822 IRF822FI
Contextual Info: 30E D M 7cj5ci237 OQETflQ? 0 • ¿ Z T SGS-THOMSON ^7# RiöD [S IiIL[l©¥ S®Rflö©i S 6 S-THOMSON TYPE IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI Voss 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V ^DS(on 3.0 n 3.0 fi 3.0 fi

IRF822

Abstract: irf820
Contextual Info: IRF820, IRF821, IRF822, IRF823 HARRIS S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2 A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

D 823 transistor

Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
Contextual Info: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI

irf820

Contextual Info: w vys S IRF820, IRF821, IRF822, IRF823 S e m ico n d ucto r y y 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF822FI

Abstract: IRF820FI IRF822 irf 460 IRF 820 ATI 216 irf822f IRF820 GC522 0G145
Contextual Info: 7^ 2^ 5 3 7 0 G M 5 7 0 0 0^2 • SGTH _ SGS-THOMSON IRF820FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IRF820 IRF820FI 500 V 500 V <3ß < 3 fì 3 A 2.2 A IRF822 IRF822FI 500 V 500 V <4Ü <4 n 2.8 A

Contextual Info: 7^2^537 0GM5700 0^2 • SGTH _ SGS-THOMSON IRF820FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IRF820 IRF820FI 500 V 500 V < 3 n < 3 n 3 A IRF822 IRF822FI 500 V 500 V <4Q < 4 n ■ ■ ■ ■

CA111

Abstract: IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722 MTP7N18 MTP7N20
Contextual Info: This Type No. IRF621 IRF622 IRF623 By MTP7N18 Its MTP7N20 IRF721 MTP3N35 MTP3N40 IRF820 IRF822 IRF823 MTP2N45 MTP2N50 T0-220 37 TO-220 (37) T 0 22 0 (37) T0-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) T 0 22 0 (37) TO-220 (37) T0-220 (37) 70-220 (37) TO-220

P4N70

Abstract: IRF840 irf830 ssp3n70a IRF822 SSP4N70A SSP6N60 3N70 IRF843 IRF842
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 N-CHANNEL Continued B Vdss (V) ID(onXA) 450.00 2.20 2.50 4.00 4.50 7.00 8.00 4.00 3.00 2.00 1.50 1.10 0.85 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 500.00 2.20 2.50 4.00 4.00 3.00 2.00 IRF822 IRF820 IRF832 4.50 7.00 8.00

IRF822

Abstract: IRF820 IRF821 IRF823 TB334 IRF823 harris
Contextual Info: IRF820, IRF821, IRF822, IRF823 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150

MTP2P45

Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5

DATA SHEET IRF331

Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i

1RF820

Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220

VN64GA

Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90

MTP3N80

Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
Contextual Info: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5

sony 2sj54

Abstract: IRF822 equivalent irf820 equivalent VN64GA 2SJ54 2SK173 VN0108N2 VN64GA equivalent 2sk173 IRF232 IRF522
Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 T O -2 2 Q A B Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100