IRF831 Search Results

IRF830

Abstract: GC237 IRF830FI IRF 830 IRF831 IRF831FI
Contextual Info: 7^237 00HS7Db SÜD • SGTH SCS-THOMSON G IRF830FI IRF831/FI ILlûï^MOûS ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss RDS on Id IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V < 1.5 £2 < 1.5 n 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V < 1.5 £2

IRf 334

Abstract: IRF 830 TRANSISTOR irf 830 Fi 830 application note using irf 830 diode on 832 irf ballast 831 transistor irf 832 IRF832
Contextual Info: SGS-THOMSON üLKgirœraOÊi IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS IRF830 IRF830FI 500 V 500 V IRF831 IRF831FI 450 V 450 V IRF832 IRF832FI 500 V 500 V IRF833 IRF833FI 450 V 450 V ^DS on 1.5 fi 1.5 fi

.2TY

Abstract: IRF830Fi S235N
Contextual Info: SGS-THOMSON ilLIOT «! IRF830/FI IRF831/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V Id R D S o n dss IR F 8 3 0 IR F 8 3 0 F I 500 V 500 V 1.5 1 .5 Q fi 4 .5 A 3 A IR F831 IR F 8 3 1 F I 450 V 450 V 1.5 n 1.5 4 .5 A 3 A fi . AVALANCHE RUGGEDNESS TECHNOLOGY

irp833

Abstract: JRF830 IRF830 3203 MOSFET IRF833 IRF832 IRF831 RF832 mosfet jrf830 F832
Contextual Info: - Standard Pow er M O SFETs IRF830, IRF831, IRF832, IRF833 File N u m b e r 1582 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE

LG diode 831

Abstract: 831 transistor IRF 830 IRf 334 IRF 830 TRANSISTOR irf 831 SMPS using IRF830 IRF830Fi transistor 831 Fi 830
Contextual Info: S C S -T H O M S O N ^ 7 J IIIC T » » TM IRF 830/FI-831/FI IRF 832/FI-833/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF830 IRF830FI VDSS 500 V 500 V RDS on 1.5 Ü 1.5 Q 'o ' 4.5 A 3.0 A IRF831 IRF831FI 450 V 450 V 1.5 n 1.5 n 4.5 A 3.0 A

Contextual Info: NATL N-Channel Power MOSFETs Continued IRF732 IRF733 MTP5N35 2N6761 2N6762 IRF431 IRF830 IRF831 IRF833 TO-220 (37) TO-220 (37) TO-220 (37) TO-220 (37) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) TO-2Û4AA (42) T0-204AA (42) TO-2Û4AA (42) TO-220 (37) TO-220

IRF830R

Abstract: diod 200 ampere 600 volt IRF831R IRF832R IRF833R IRF83Q
Contextual Info: _Rugged Power MOSFETs File Number 2021 IRF830R, IRF831R, IRF832R, IRF833R Avalanche Energy Rated N-Channel Power MOSFETs 4.0A and 4.5A, 450V-500V rDs on = 1,5Q and 2.00 N -C H A N N E L E N H A N C E M E N T M O D E D Features: • Single pulse avalanche energy rated

IRF830

Abstract: IRF831 IRF830FI IRF831FI
Contextual Info: IRF830/FI IRF831/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V DSS R DS on ID IRF830 IRF830FI TYPE 500 V 500 V < 1.5 Ω < 1.5 Ω 4.5 A 3A IRF831 IRF831FI 450 V 450 V < 1.5 Ω < 1.5 Ω 4.5 A 3A • ■ ■ ■ TYPICAL RDS(on) = 1.35 Ω AVALANCHE RUGGED TECHNOLOGY

Contextual Info: IRF830, IRF831, IRF832, IRF833 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

P4N70

Abstract: IRF840 irf830 ssp3n70a IRF822 SSP4N70A SSP6N60 3N70 IRF843 IRF842
Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 N-CHANNEL Continued B Vdss (V) ID(onXA) 450.00 2.20 2.50 4.00 4.50 7.00 8.00 4.00 3.00 2.00 1.50 1.10 0.85 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 500.00 2.20 2.50 4.00 4.00 3.00 2.00 IRF822 IRF820 IRF832 4.50 7.00 8.00

IRF830

Abstract: IRF 450 MOSFET IRF831 LG diode 831 transistor irf830 TRANSISTOR mosfet IRF830
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF830 IRF831 IRF832 IRF833 Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid

IRF830

Abstract: IRF8331 IRF831 IRF832 IRF833 harris IRF833 TA17415 TB334
Contextual Info: IRF830, IRF831, IRF832, IRF833 S E M I C O N D U C T O R 4.0A and 4.5A, 450V and 500V, 1.5 and 2.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.0A and 4.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

irf8313pbf

Abstract: IRF8313TRPBF EIA-541 F7101 IRF7101 IRF8313TR
Contextual Info: PD - 97145 IRF8313PbF HEXFET Power MOSFET Applications l l VDSS RDS on max Qg 30V 15.5m:@VGS = 10V 6.0nC Load Switch DC/DC Conversion Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating

Contextual Info: 11/29/12 IRF831 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diode Array, Integrated Circuits an… Enter Your Part # Home Online Store IRF831 Availability Buy IR F831 at our online store ! Diode s Transistors IRF831 Information Inte grate d C ircuits

BF 331 TRANSISTORS

Abstract: ibf830 SD 336 IRf 334 MOS 3020 application note using irf 830 rf830 BF 830 transistor transistor maw CJ135
Contextual Info: 30E D rzj S • 7^237 SCS-THOMSON G s^THÖMSoF TYPE IRF830 IRF830FI IRF831 IRF831FI IRF832 IRF832FI IRF833 , IRF833FI QG2Sßl3 b ■ VDSS 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V N ^DS on 1.5 n 1.5 n 1.5 n 1.5 ß 2.0 Q 2.0 fl 2.0 Q 2.0 a - ( _

Contextual Info: HE D I MassMsa oooflstio a | Data Sheet No. PD-9.311J T-39-11 INTERNATIONAL R E C T IF IE R IN T E R N A T IO N A L R E C T IF IE R I O R I REPETITIVE AVALANCHE AND dv/dt RATED* IRF830 IRF831 IRF832 IRF833 HEXFET TRANSISTORS Q r X N -C H A N N E L 500 Volt, 1.5 Ohm HEXFET

Contextual Info: PD - 97145 IRF8313PbF HEXFET Power MOSFET Applications l l VDSS RDS on max Qg 30V 15.5m:@VGS = 10V 6.0nC Load Switch DC/DC Conversion Benefits l Low Gate Charge and Low RDS(on) l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating

IRF833

Abstract: IRF832 1RF831 30010 IRF830 IRF831 w sa 45a diode
Contextual Info: 3875081 G E SOLID STATE 01 Standard Power M O S FE T s DE 1 3Û7SQÔ1 QDlfl37‘ì S I D - - IRF830, IRF831, IRF832, IRF833 File Number 1582 Power MOS Field-Effect Transistors N -CH A NN EL EN H A N C E M E N T M ODE

C312 diode

Abstract: diode C309 diode C315 9311J AN975 power MOSFET IRF830 IRF830 IRF831 IRF833 IF83
Contextual Info: Data Sheet No. PD-9.311J IN T E R N A T IO N A L R E C T IF IE R I« R REPETITIVE AVALANCHE AND dv/dt RATED" IRF830 IRF831 IRF83S IRF833 HEXFET TRANSISTORS IM -C H A IM IM E L 500 Volt, 1.5 Ohm HEXFET TO-220AB Plastic Package Product Summary The HEXFET technology is the key to International

4N50

Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IRLML0030

Abstract: IRLB3034 IRFB4110 irfp4004 irls4030 IRFB4020PBF IRFP4568 IRFP4229 HEXFEt Power MOSFET Design Guide IRLB3036
Contextual Info: Benchmark MOSFETs | Selection Guide Product Line Overview Broad Portfolio of MOSFETS Targeting Multiple Market Segments Industrial Key Differentiators Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that

D84 TRANSISTOR

Abstract: IRF830 RF830 j01 relay
Contextual Info: IRF830,831 D84DR2,R1 FUT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­ ness and reliability. 4.5 AMPERES 500, 450 VOLTS

IRF9120

Abstract: 1rf830 1rf9530 IRF9122 IRF9513 IRF9141 IRF9512 IRF9523 IRF843 IRF9130
Contextual Info: - * sy € i± £ IR F 9522 IRF9523 IRF9530 IRF9531 IRF9532 IRF9533 »%^<n * f - 1 IR IR IR IR IR IR IR IR IR IR IR IR IR IR IR ]R IR IR IR ¡R IR IR IR IR IR IR IR IR IR IR £ is V 500 N 45 0 P -100 P -60 P -100 P -60 P -100 P -60 P -100 P -60 P -200 P -150