IRF820 Search Results

IRF820PBF

Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements

Contextual Info: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching

D 92 M - 02 DIODE

Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements

Contextual Info: PD - 94979 IRF820PbF • Lead-Free Document Number: 91059 02/03/04 www.vishay.com 1 IRF820PbF Document Number: 91059 www.vishay.com 2 IRF820PbF Document Number: 91059 www.vishay.com 3 IRF820PbF Document Number: 91059 www.vishay.com 4 IRF820PbF Document Number: 91059

SiHF820AL

Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration

IRF820AS

Abstract: AN-994 IRF820A IRF820AL diode SS 16
Contextual Info: PD- 93774A IRF820AS IRF820AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic

IRF820

Abstract: irf-82
Contextual Info: IRF820 Data Sheet July 1999 2.5A, 500V, 3.000 Ohm, N-Channel Power MOSFET [ /Title IRF82 0 /Subject (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (2.5A, 500V, 3.000 Ohm, NChannel Power MOSFET, Intersil Corporation, TO220AB ) /Creator ()

IRF820

Contextual Info: IRF820 A d van ced Power MOSFET FEATURES B V DSS - 500 V ^D S o n = 3 .0 Ì2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology LO c\i Q II ♦ Lower Input Capacitance A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 500V

Contextual Info: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements

IRFB22

Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
Contextual Info: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E

Contextual Info: IRF820A Advanced Power MOSFET FEATURES B ^D S S - 500 V ♦ Avalanche Rugged Technology r\D cn a ♦ Lower Input Capacitance II ^D S o n = ♦ Rugged Gate Oxide Technology 3 .0 Q A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 500V

IRF820A

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

IRF820

Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821 FEATURES TO-220 ' Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: PD - 95548 IRF820SPbF • Lead-Free www.irf.com 1 7/22/04 IRF820SPbF 2 www.irf.com IRF820SPbF www.irf.com 3 IRF820SPbF 4 www.irf.com IRF820SPbF www.irf.com 5 IRF820SPbF 6 www.irf.com IRF820SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations

IRF820ASPBF

Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

IRFS820B

Abstract: IRF820B
Contextual Info: IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: IRF820S, SiHF820S, IRF820L, SiHF820L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) () VGS = 10 V 3.0 Qg (Max.) (nC) 24 Qgs (nC) 3.3 Qgd (nC) 13 Configuration Single D D2PAK (TO-263)

N-Channel mosfet 400v 25A

Abstract: IRF820S n-channel 250V power mosfet
Contextual Info: IRF820S A dvanced Power MOSFET FEATURES B V DSS — 5 0 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance 2 .5 A lD = ♦ Improved Gate Charge 3 .0 Î2 ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 500V

IRF820

Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET
Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid

IRF820S

Abstract: diode Rl 257
Contextual Info: $GYDQFHG 3RZHU 026 7 IRF820S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V

IRF820

Abstract: IRF820.821 IRF822
Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821/822/823 FEATURES • Low er R ds <on > • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

N 821 Diode

Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
Contextual Info: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822

1rf830

Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Contextual Info: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*

Contextual Info: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt