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    Bourns Inc BRF8216-BZ-R100TD4

    RESFOIL BRF 80216 0.1R 0.1% TC50 - Boxed Product (Development Kits) (Alt: BRF8216-BZ-R100TD4)
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    Avnet Americas BRF8216-BZ-R100TD4 Box 16
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    TTI BRF8216-BZ-R100TD4 Bulk 16
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    Master Electronics BRF8216-BZ-R100TD4
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    • 100 $248.33
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    Vishay Intertechnologies IHSM5832RF821L

    IHSM-5832 820 15% RC3 - Tape and Reel (Alt: IHSM5832RF821L)
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    Avnet Americas IHSM5832RF821L Tape & Reel 17 Weeks 500
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    Newark IHSM5832RF821L Tape & Reel 500
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    Vishay Dale IHSM5832RF821L

    INDUCTOR, IHSM-5832 820 15% RC3
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    RS IHSM5832RF821L Bulk 500
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    Harris Semiconductor IRF821

    MOSFET N-Channel 450V 2.5A (Tc) TO-220-3
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    Rochester Electronics IRF821 390 1
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    National Semiconductor Corporation IRF821

    Power Field-Effect Transistor, 3A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Vyrian IRF821 7,312
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    RF821 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FET IRF 540

    Abstract: diode lt 823
    Contextual Info: • ^DES?! 0DS40b3 HARRIS 741 ■ has IRF820/821/822/823 IRF82OR/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Featu res P ack ag e T O -2 2 0 A B • 2.2 and 2.5A, 450V - 500V T O P VIEW • rDS °n = 3-oii and 4.0il • Single Pulse Avalanche Energy Rated*


    OCR Scan     		0ds40b3irf820/821/822/823irf82or/821r/822r/823rirf820+8irf821irf822irf823irf820rirf821rirf822rfet irf 540diode lt 823 PDF