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    IRF821 Search Results

    IRF821 Datasheets (31)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRF821
    		Fairchild Semiconductor N-Channel Power MOSFETs, 3.0 A, 450 V/500 V Scan PDF 161.39KB 5
    IRF821
    		FCI POWER MOSFETs Scan PDF 204.39KB 4
    IRF821
    		Frederick Components Power MOSFET Selection Guide Scan PDF 204.39KB 4
    IRF821
    		General Electric Power Transistor Data Book 1985 Scan PDF 129.87KB 2
    IRF821
    		General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A. Scan PDF 168.15KB 5
    IRF821
    		Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 179.22KB 5
    IRF821
    		International Rectifier TO-220 HEXFET Power MOSFET Scan PDF 41.94KB 1
    IRF821
    		International Rectifier N-Channel Power MOSFETs Scan PDF 34.17KB 1
    IRF821
    		Motorola European Master Selection Guide 1986 Scan PDF 35.49KB 1
    IRF821
    		Motorola N-CHANNEL Enhancement-Mode Silicon Gate TMOS Scan PDF 143.74KB 2
    IRF821
    		Motorola Switchmode Datasheet Scan PDF 57.06KB 1
    IRF821
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 46.83KB 1
    IRF821
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 46.83KB 1
    IRF821
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.47KB 1
    IRF821
    		Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 112.74KB 1
    IRF821
    		Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF 40.4KB 1
    IRF821
    		Unknown FET Data Book Scan PDF 214.89KB 4
    IRF821
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 85.5KB 1
    IRF821
    		National Semiconductor N-Channel Power MOSFETs Scan PDF 31.41KB 1
    IRF821
    		Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF 330.32KB 6
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    IRF821 Price and Stock

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    Harris Semiconductor IRF821

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF821 120
    • 1 $2.24
    • 10 $2.24
    • 100 $1.23
    • 1000 $1.23
    • 10000 $1.23
    		Buy Now
    Rochester Electronics IRF821 390 1
    • 1 -
    • 10 -
    • 100 $0.68
    • 1000 $0.56
    • 10000 $0.50
    		Buy Now

    Samsung Electro-Mechanics IRF821

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRF821 78
    • 1 $2.24
    • 10 $2.24
    • 100 $1.23
    • 1000 $1.23
    • 10000 $1.23
    		Buy Now

    National Semiconductor Corporation IRF821

    Power Field-Effect Transistor, 3A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IRF821 7,312
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    IRF821 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IRFB22

    Abstract: IIRF823R IRF820R IRF821R IRF822FI IRF822R IRF823R thermal impedance GI 312 diode
    Contextual Info: Rugged P ow er M O S F E T s _ IRF820R, IRF821R, IRF822R, IRF823R F ile N u m b e r 2020 Avalanche Energy Rated N-Channel Power MOSFETs 2.0A an d 2.5A, 45 0 V -5 0 0 V rDs on = 3 .0 0 an d 4 .0 fi N-C H AN N EL E N H A N C E M E N T M O D E


    OCR Scan     		irf820rirf821rirf822rirf823r+750v-500virf822fiiirf823rsf822rirfb22thermal impedancegi 312 diode PDF

    IRF820

    Abstract: P Channel Power MOSFET IRF IRF 511 MOSfet IRF P CHANNEL MOSFET IRF821 R 823 motorola IRF n CHANNEL MOSFET
    Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode S ilico n G ate TM O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as sw itching regulators, converters, solenoid


    OCR Scan     		irf820irf821irf823gate-sourcf821+5p channel power mosfet irfirf 511 mosfetirf p channel mosfetr 823 motorolairf n channel mosfet PDF

    N 821 Diode

    Abstract: transistor IRF 450 821 transistor ON 823 D 823 transistor transistor D 822 irf transistor 822FI SC-0241 tr 821
    Contextual Info: rz 7 A 7#. SCS-THOMSON IRF 820/FI-821/FI mnmglliigmiBiMnigi_ IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS RdS OI1 IRF820 IRF820FI 500 V 500 V 3.0 ß 3.0 ß IRF821 IRF821FI 450 V 450 V 3.0 ß 3.0 n 2.5 A 2.0 A IRF822


    OCR Scan     		irf820irf820fiirf821irf821fi+16irf822irf822fiirf823irf823fi820/fi-821/fi822/fi-823/fin 821 diodetransistor irf 450821 transistoron 823d 823 transistortransistor d 822irf transistor822fisc-0241tr 821 PDF

    IRF 450 MOSFET

    Abstract: IRF820 IRF821 IRF823 IRF820..821 72SM MTP3N45 IRF820.821 transistor IRF 450 4570 821
    Contextual Info: MOTOROLA SC X S T R S /R F 11E D I h3b7ESM 0GÔTP05 {, | MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA IRF820 IRF821 IRF823 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode S ilicon G ate TM O S These T M O S Power FETs are designed for high


    OCR Scan     		irf820irf821irf823221a-04+8tq-220abirf 450 mosfetirf820..82172smmtp3n45irf820.821transistor irf 4504570 821 PDF

    IRF822

    Abstract: IRF820 IRF823 IRF821 Diode IRF820
    Contextual Info: Standard Power M O SFETs- IRF820, IRF821, IRF822, IRF823 F ile N u m b e r 1581 Power MOS Fîeld-Effect Transistors N -CHANNEL ENHANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V


    OCR Scan     		irf820irf821irf822irf823+250v-500vdiode irf820 PDF

    irc820

    Abstract: irf transistors IRF 820 i821
    Contextual Info: SGS-THOMSON ¡L IOT iOûS IRF820/FI-821/FI IRF822/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF820 IRF820FI V dss I 500 500 R DS(on Id 3 Q 3 a 3 A 2.2 A 3 1) 3 a 3 A 2.2 A 4 n 4 il 2 .8 A V V IRF821 IRF821FI 450 V 450 V IRF822 IRF822FI 500


    OCR Scan     		irf820/fi-821/fiirf822/fiirf820irf820fi+10irf821irf821fiirf822irf822fio-220isowatt220irc820irf transistorsirf 820i821 PDF

    T1IG

    Abstract: IAF820 IRF822 1RF822 IRF820 IRF821 IRF823 t 319 sti 5510
    Contextual Info: Dl 3875081 G E SOLID 3Ö7SGÖ1 QQ1Ô374 b S T AT E 01E 18 374 - D T-3.9t 11 öianaara Kower M O SFET s IRF820, IRF821, IRF822, IRF823 File N um ber 1581 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C EM EN T M ODE N-Channel Enhancement-Mode


    OCR Scan     		irf820irf821irf822irf823+750v-500v1rf823t1igiaf8201rf822t 319sti 5510 PDF

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor irf transistors irf821 IRF820 IRF820FI IRF821FI IRF822 IRF822FI
    Contextual Info: 30E D M 7cj5ci237 OQETflQ? 0 • ¿ Z T SGS-THOMSON ^7# RiöD [S IiIL[l©¥ S®Rflö©i S 6 S-THOMSON TYPE IRF820 IRF820FI IRF821 IRF821FI IRF822 IRF822FI IRF823 IRF823FI Voss 500 V 500 V 450 V 450 V 500 V 500 V 450 V 450 V ^DS(on 3.0 n 3.0 fi 3.0 fi


    OCR Scan     		820/fi-821/fi822/fi-823/fiirf820irf820fi+10irf821irf821fiirf822irf822fiirf823irf823fid 823 transistortransistor irf 450821 transistorirf transistors PDF

    IRF822

    Abstract: irf820
    Contextual Info: IRF820, IRF821, IRF822, IRF823 HARRIS S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2 A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		irf820irf821irf822irf823+3ta17405rf822rf823 PDF

    D 823 transistor

    Abstract: transistor IRF 450 821 transistor transistor D 822 P irf transistors transistor irf 500 transistor D 822 ON 823 823FI irf822f
    Contextual Info: rz7 SGS-THOMSON [ÜD g»iIL[l RDD(gi IRF 820/FI-821/FI IRF 822/FI-823/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRF820 IRF820FI 500 V 500 V 3.0 3.0 IRF821 IRF821FI 450 V 450 V 3.0 3.0 IRF822 IRF822FI 500 V 500 V 4.0 4.0 IRF823 IRF823FI


    OCR Scan     		820/fi-821/fi822/fi-823/fiirf820irf820fi+16irf821irf821fiirf822irf822fiirf823irf823fid 823 transistortransistor irf 450821 transistortransistor d 822 pirf transistorstransistor irf 500transistor d 822on 823823fiirf822f PDF

    irf820

    Contextual Info: w vys S IRF820, IRF821, IRF822, IRF823 S e m ico n d ucto r y y 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		irf820irf821irf822irf823+1thirf823 PDF

    P4N70

    Abstract: IRF840 irf830 ssp3n70a IRF822 SSP4N70A SSP6N60 3N70 IRF843 IRF842
    Contextual Info: FUNCTION GUIDE POWER MOSFETs TO-220 N-CHANNEL Continued B Vdss (V) ID(onXA) 450.00 2.20 2.50 4.00 4.50 7.00 8.00 4.00 3.00 2.00 1.50 1.10 0.85 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 500.00 2.20 2.50 4.00 4.00 3.00 2.00 IRF822 IRF820 IRF832 4.50 7.00 8.00


    OCR Scan     		o-220irf823irf821irf833+14irf831irf843irf841irf822irf820irf832p4n70irf840irf830ssp3n70assp4n70assp6n603n70irf842 PDF

    IRF822

    Abstract: IRF820 IRF821 IRF823 TB334 IRF823 harris
    Contextual Info: IRF820, IRF821, IRF822, IRF823 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		irf820irf821irf822irf823+2tb334irf823 harris PDF

    IN5248B

    Abstract: G5LE-114P-PS toko rcl circuit inter CV 203 TK84819 Toko inductor RCL znr 14k ECK-D2H152KBE Beckman Industrial spw transformer 602
    Contextual Info: rSTOKO TK84819 POWER FACTOR CONTROLLER PWM COMBO P^EUMOGMmf 0MF AT0©[N] FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Reduced Overall Current Consumption Reduced Start-Up Current Slow Start Following Current Limit Shutdown


    OCR Scan     		ml4819tk84819iec-555ic-112-tk84819+9in5248bg5le-114p-pstoko rclcircuit inter cv 203toko inductor rclznr 14keck-d2h152kbebeckman industrialspw transformer 602 PDF

    MTP2P45

    Abstract: MTP4N90 MTP6N6 MTP8N45 IRF840 SELECTION GUIDE MTP3N80 MTH8P20 MTP3N6 MTP1N95 MTP2N85
    Contextual Info: POWER TRANSISTORS — TMOS continued V b R(DSS) (V olt*) M in (Ohms) M ax (Amp) 500 6 3 D S (o n ) @ >D Device 450 MTM2P50 >D(Contl (Amp) M ax PD @ TC = 25-C (W atts) M ax Package 2 75 204AA MTP2P50 220AB MTM2P45 204AA 220A8 MTP2P45 200 0.7 4 MTM8P20 1 2.5


    OCR Scan     		o-218o-22qabmtm2p50204aa+13mtp2p50220abmtm2p45mtp2p45mtp4n90mtp6n6mtp8n45irf840 selection guidemtp3n80mth8p20mtp3n6mtp1n95mtp2n85 PDF

    DATA SHEET IRF331

    Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH
    Contextual Info: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm | ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i


    OCR Scan     		ivn6100tnuivn6200cndo-220vn0401d+10ivn6200cnet0-220irf533ivn6200cnfvn0801ddata sheet irf331irf540irf44vn2410mivn6200cnh PDF

    IRF740 smd

    Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
    Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36


    OCR Scan     		irf523irf523fiirf521irf521fi+16irf533irf533fiirf531irf531fiirf543irf543fiirf740 smdtsd4m350vtsd4m250vsgsp363irf740 mosfetirf540sgsp461tsd4m250irf823sgs100ma010d1 PDF

    1RF820

    Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840
    Contextual Info: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220


    OCR Scan     		o-220o-237o-202irf450+12irf840irf440vn5001d/irf830vnp002airf820vn5001a/irf4301rf820vn64gavn2410mirf340irf350irf740 PDF

    N9301

    Abstract: beckman sp 101 TK84
    Contextual Info: r& TO K O TK84819 POWER FACTOR CONTROLLER PWM COMBO FEATURES APPLICATIONS • Reduced Overall Current Consumption ■ Switching Power Supplies with PFC ■ Reduced Start-Up Current ■ Computers ■ Slow Start Following Current Limit Shutdown ■ Workstations


    OCR Scan     		tk84819iec-555ml4819ic-112-tk84819+3n9301beckman sp 101tk84 PDF

    IRF820

    Contextual Info: N-CHANNEL POWER MOSFETS IRF820/821 FEATURES TO-220 ' Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		irf820/821o-220irf820irf821 PDF

    d83-004k

    Abstract: D83-004 d83004 SPWM 555 B64290-K45 nam .22K 630V
    Contextual Info: Ju ly 1992 A D V A N C E IN FO R M A TIO N % M k r o L in e a r ML4819 Power Factor and PWM Controller "Combo" GENERAL DESCRIPTION T h e ML4819 is a co m p lete boost m od e P o w e r Factor C o n tro l P FC | w h ich also co n tain s a P W M con tro ller.


    OCR Scan     		ml4819l4s1215awgirf840+112n2222irf8211n414af41206-tcb64290-k45-x27d83-004kd83-004d83004spwm 555b64290-k45nam .22k 630v PDF

    VN64GA

    Abstract: IRF733 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140 IRF142 IRF150
    Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100 100 100 100 100 100 90 90


    OCR Scan     		irf150irf152irf140irf142+9vn1000airf130vn1001airf132irf120irf122vn64gairf7332n6658 PDF

    MTP3N80

    Abstract: MTP1N60 MTM2N45 MTM1N100 mtm2n50 MTM7N50 mtp2n50 MTP2P45 IRF450 MTM6N60
    Contextual Info: \P W \? W®Di]©0©Ü oF© •=■W ® ® Plastic TMOS Power MOSFETs — TO-22QAB TO-220AB CASE 221A-02 ’D(Cont (Amp) Max PD @ TC = 25°C (W atts) Max MTP1N100 1 75 MTP3N100 3 rDS(on) @ to V BR(DSS) (Volts) Min (Ohms) Max (Amp) 10CI0 10 0.5 7 1.5 10 0.5


    OCR Scan     		t0-220abo-220ab21a-02mtp1n100+16mtp3n100mtp1n95mtp3n95mtp2n90mtp4n90mtp2n85mtp3n80mtp1n60mtm2n45mtm1n100mtm2n50mtm7n50mtp2n50mtp2p45irf450mtm6n60 PDF

    sony 2sj54

    Abstract: IRF822 equivalent irf820 equivalent VN64GA 2SJ54 2SK173 VN0108N2 VN64GA equivalent 2sk173 IRF232 IRF522
    Contextual Info: Siliconix 1-1? f l MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 T O -2 2 Q A B Breakdown Voltage (Volts) rDS(on) (Ohms) >d Continuous (Amps) Power Dissipation (Watts) 100 100 100 100 100


    OCR Scan     		o-220vn1000dirf522vn1000a+12irf540irf632irf640sony 2sj54irf822 equivalentirf820 equivalentvn64ga2sj54 2sk173vn0108n2vn64ga equivalent2sk173irf232 PDF