IRF533 Search Results

IRF530

Abstract: IRF532 irf531 IRF533 1RF533 t5d 58 reliability irf530 irf-530
Contextual Info: ZETEX S EMI CONDUCT ORS W D T=] 70S7f i DDDSSSb 1 95D 0 5 5 5 6 IRF530 IRF531 IRF532 IRF533 N-channel enhancement mode vertical DMOS PET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

2CS-42724

Abstract: RRF530 S33R IRF530R IRF531R IRF532R IRF533R TC. 12A MOSFET Drivers
Contextual Info: _ Rugged Power MOSFETs File Number 1993 IRF530R, IRF531R, IRF532R, IRF533R Avalanche Energy Rated N-Channel Power MOSFETs 12A and 14A, 60V-100V rDs on = 0.18CÎ and 0 .2 5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

RF530

Abstract: 1RF530 irf532 IRF530 HEXFET TRANSISTORS irf531 IR IRF532 1RF531 TYN 058 IRF530 LIRF530
Contextual Info: he o | qassqss 0000450 1 | Data Sheet No. PD-9.307N T-39-11 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE IRF530 IRF531 IRF532 IRF533Î HEXFET TRANSISTORS

MTP20N10

Abstract: 1RF531
Contextual Info: NATL N-Channel Power MOSFETs Continued 2N67S5 2N6756 IRF130 IRF132 IRF133 IRF530 S 1-6 IRF532 IRF533 MTP20N10 2N6757 IRF230 IRF231 lD @ TC = 25 'C (A) •rD Tc = 100-C (A) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-204AA (42) TO-2Û4AA (42) TO-204AA

IRF530

Abstract: irf531 VN1200A IRF130 IRF532 VN0801D 100VI vn1200d IRF131 IRF132
Contextual Info: • IRF133 ■ IRF131 s?UL IRF130 IRF530 ■ IRF531 ■ IRF132 C4 ■ IRF131 ■ s ■ UL ■ OC ■ ■ IRF130 « OC ■ IRF132 ■ IRF133 ■ IRF532 ■ IRF533 S Siliconix 100VMOSPOWER N-Channel Enhancement Mode CO IO These power FETs are designed especially for audio amplifiers,

IRF530

Abstract: IRF532 L10M IRF531 IRF533 J56-1 IRF530 mosfet
Contextual Info: Standard Power MOSFETs- IRF530, IRF531, IRF532, IRF533 File Num ber 1575 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 12A and 14A, 60V-100V

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

IRF530

Abstract: IR IRF532 IRF531 OF IRF530 TA17411 f531 RF1S540 RF1S540SM9A irf532 rf1s530sm
Contextual Info: P *3 3 S IRF530, IRF531, IRF532, IRF533, RF1S530, RF1S530SM 12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs juiy 1998 Features Description • 12A and 14A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

diode U3j

Abstract: IRf 447 MOSFET 1RF530 1rf5305 a7x transistor IRF532 MOSFET IRF 531 motorola diode u3j aaBO ON U3J
Contextual Info: MOTOROLA SC MOTOROLA XST RS/R F IM E D I b3b?aSM O OÔ ÎbôS 4 IRF530 1RF531 IRF532 IRF533 •I SEM ICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM OS POWER FIELD EFFECT TRANSISTOR These T M O S Pow er FETs are d esign ed for low voltage, high

Contextual Info: IRF533 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)80 V(BR)GSS (V)20 I(D) Max. (A)12# I(DM) Max. (A) Pulsed I(D)8.3 @Temp (øC)100 IDM Max (@25øC Amb)48# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)79# Minimum Operating Temp (øC)-55õ

1RF620

Abstract: 1RF540 1RF630 1RF640 1RF530 1RF520 IRF625 RF543 BS250F BS107PT
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

IRF530

Abstract: IR IRF532 IRF531 1RF531 IRF532 ic l00a IRF530 mosfet IRF533
Contextual Info: DE 1 3 a ? S ü f l l D01Û33T 4 01 3875081 G E SOLID STATE 01E Standard Power MOSFETs _ 18339 IRF530, IRF531, IRF532, IRF533 O T '3 7 *// File Number 1575 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF413

Abstract: 1RF530 IRF449 IRF460 RF543 samsung irf540 1RF540 1RF620 irf362 IRF448
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

IRF530

Abstract: IRF532.533
Contextual Info: MICRO ELE CT RONICS-CO RP 1TE » bQTlTôfl QQQ07Ö1 1 »REUMINARY B l° |- ü IRF530 IRF531 IRF532 IRF533 I HIGH POWER MOSFETs PartNunfaw IRFS3Q IRF531 IRF532 IRFS33 APPLICATIONS l AI• .SWITCHING REGULATORS • I I I I • CONVERTERS VDS ^OS on 100V man

chopper transformer winding for 24v battery charging

Abstract: hp laptop charging CIRCUIT diagram p50n05 43a Hall effect pin out 2N2219 transistor substitute PURE SINE WAVE inverter schematic diagram 2n3906 npn magnetic amplifier saturable core P50N05E pe-61592
Contextual Info: Application Note 29 October 1988 Some Thoughts on DC/DC Converters Jim Williams and Brian Huffman INTRODUCTION Many systems require that the primary source of DC power be converted to other voltages. Battery driven circuitry is an obvious candidate. The 6V or 12V cell in a laptop computer must be converted to different potentials needed for

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

VN88AF

Abstract: VN89AF VN66AD VN67AD VN88AF SILICONIX VN46AF VN66AF 2N6657 VN0401D IRF622
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

mospower cross vn66af

Abstract: VN88AF CROSS REFERENCE VN99AB OLS 049 2SJ54 sony IRF542 2N6658 CROSS REFERENCE 2n6661 VN0209N2 VN88
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

irf540 TTL

Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150

IRF740 smd

Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36

Equivalent IRF 44

Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

VN99AB

Abstract: VN66AF 2N6658 VN46AF IRF620 IRF622 IRF630 IRF631 IRF632 IRF633
Contextual Info: Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150 150