Equivalent IRF 44
Abstract: irf630 vn0106n5 VN46 VN0108N2 BUZ44 IRF232 IRF240 IRF422 IRF522
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170
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o-220vn1000dirf522vn1000a+12irf540irf632irf640equivalent irf 44irf630vn0106n5vn46vn0108n2buz44irf232irf240irf422
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Equivalent IRF 44
Abstract: sony 2sj54 VN0109N3 irf 80 n BUZ44 VN0104N5 2SJ54 irf 44 n VN0108N2 VN0104N1
Contextual Info: Siliconix 1-1? f l CO CO COCO Ol o LL. U . t t ù i • ■ N M C O M «M O LL. U . IRF230 ■ IRF231 - IRF232 ■ IRF233 IRF630 ■ IRF631 - IRF632 ■ IRF633 200VMOSPOWER These power FETs are designed especially for switching regulators, power converters,
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o-220vn1000dirf522vn1000a+13irf540irf632irf640equivalent irf 44sony 2sj54vn0109n3irf 80 nbuz44vn0104n52sj54irf 44 nvn0108n2vn0104n1
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irf630 equivalent
Abstract: irf630 irf640 irf630 mtm5n35 MTM5N40 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF
Contextual Info: 1-17 MOSPOWER Cross Reference List c « g s s <0J= P fi c i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r ' s ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i
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ivn6100tnuivn6200cndo-220vn0401d+10ivn6200cnet0-220irf533ivn6200cnfvn0801dirf630 equivalentirf630 irf640irf630mtm5n35mtm5n40
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1rf630
Abstract: rf630 IRF632R IRF630 HARRIS
Contextual Info: 3 ] H A R R I S IR F 6 3 0 /6 3 1 /6 3 2 /6 3 3 IR F 6 3 0 R /6 3 1 R /6 3 2 R /6 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s T O -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150V - 2 0 0V • i"DS °n = and 0 .6 fi
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irf630irf631irf632irf633+7irf630rirf631rirf632rirf633r1rf630rf630irf630 harris
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irf630 equivalent
Abstract: MTM5N40 IVN6100TNU VN2410L "cross reference" MTM3N55 IRF533 IVN6200CND IVN6200CNE irf 150 equivalent IVN6200CNH
Contextual Info: 1-17 MOSPOWER Cross Reference List c « s s <0J= g i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o | I O O I I I P I I I | I I j j CO00 COCO j j ' I I I I OOOO ' ' I I o o r i mm | ioom m I L -^ ^ l ' < O Ò ' ' ' lO ' ' ' ' '
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ivn6100tnuivn6200cndo-220vn0401d+11ivn6200cnet0-220irf533ivn6200cnfvn0801dirf630 equivalentmtm5n40vn2410l "cross referencemtm3n55irf 150 equivalentivn6200cnh
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irf 630
Abstract: ALL IRF 3.335t irf630 IRF620 IRF622 IRF631 IRF632 vn89af IRF640
Contextual Info: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 1 1 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150
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irf640irf642irf630irf632+10irf620irf622vn1706dirf641irf643irf631irf 630all irf3.335tvn89af
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ic 957B
Abstract: 957b 1ay transistor AN957B tektronix 576 curve tracer 957b ic SEC irf630 1rf630 IRF630 HEXFET TRANSISTORS transistor f630
Contextual Info: A P PLIC ATIO N NOTE 957B Measuring HEXFET Characteristics H E X F E T is the tradem ark for International Rectifier Pow er M O S F E T s by R. P E A R C E , S. B R O W N , D. G R A N T Summary Curve tracers have generally been designed lor making measurements
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an-957bic 957b957b1ay transistor+7an957btektronix 576 curve tracer957b icsec irf6301rf630irf630 hexfet transistorstransistor f630
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irf 630
Abstract: AAIJ IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350
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irf450irf452irf440irf442+9vnp002avn5001airf430vn5002airf432irf420irf 630aaijirf422
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1RF630
Abstract: USSR DIODE IRF630 IRF630 p diode oa 90 M300CL ScansUX1016
Contextual Info: International K Rectifier PD-9.3091 IRF630 HEXFET® P o w e r M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Sim ple Drive Requirements V DSS = 200V R DS on = 0 -4 0 Í2 ID = 9.0A Description
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irf630o-2201rf630ussr diode+4irf630 pdiode oa 90m300clscansux1016
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1RF630
Contextual Info: 43 0 2 2 7 1 0054053 0L.5 • HAS HARRIS ÈRF630/631/632/633 IR F630R /631R /632R /633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -22 0A B TOP VIEW • 8.0A and 9.0A, 150V - 200V • n a s io n = and ° - 6 fi • Single Pulse Avalanche Energy Rated*
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rf630/631/632/633f630r/631r/632r+7/633rirf630irf631irf632irf633irf630r1rf630
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