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    2SJ54 Search Results

    2SJ54 Datasheets (62)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SJ54
    		Unknown Shortform Datasheet & Cross References Data Short Form PDF 80.61KB 1
    2SJ54
    		Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.93KB 1
    2SJ540
    		Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF 55.01KB 10
    2SJ540
    		Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF 55.8KB 9
    2SJ540
    		Renesas Technology Silicon P Channel MOS FET Original PDF 84.04KB 8
    2SJ540
    		Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF 77.35KB 12
    2SJ540-E
    		Renesas Technology Silicon P Channel MOS FET Original PDF 84.02KB 8
    2SJ541
    		Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF 55.07KB 10
    2SJ541
    		Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF 55.36KB 9
    2SJ541
    		Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF 77.36KB 12
    2SJ541
    		Renesas Technology Silicon P Channel MOS FET Original PDF 83.32KB 8
    2SJ541-E
    		Renesas Technology Silicon P Channel MOS FET Original PDF 83.33KB 8
    2SJ542
    		Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF 55.07KB 10
    2SJ542
    		Renesas Technology FET Transistor, Silicon P Channel MOS FET High Speed Power Switching Original PDF 75.9KB 12
    2SJ542
    		Renesas Technology Silicon P Channel MOS FET Original PDF 83.07KB 8
    2SJ542-E
    		Renesas Technology Silicon P Channel MOS FET Original PDF 83.07KB 8
    2SJ543
    		Hitachi Semiconductor Silicon P Channel MOS FET High Speed Power Switching Original PDF 55.66KB 9
    2SJ543
    		Hitachi Semiconductor Silicon P-Channel MOS FET Original PDF 55.33KB 10
    2SJ543
    		Renesas Technology Silicon P Channel MOS FET High Speed Power Switching Original PDF 77.67KB 12
    2SJ543
    		Renesas Technology Silicon P Channel MOS FET Original PDF 83.58KB 8
    SF Impression Pixel

    2SJ54 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation 2SJ542-E

    Trans MOSFET P-CH Si 60V 18A 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SJ542-E 1,523 190
    • 1 -
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    • 100 -
    • 1000 $1.64
    • 10000 $1.46
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    Rochester Electronics 2SJ542-E 1,523 1
    • 1 -
    • 10 -
    • 100 $1.58
    • 1000 $1.31
    • 10000 $1.17
    		Buy Now

    Renesas Electronics Corporation 2SJ545-E

    MOSFET P-Channel 60V 12A (Ta) TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ545-E 168 1
    • 1 -
    • 10 -
    • 100 $1.17
    • 1000 $0.97
    • 10000 $0.87
    		Buy Now

    Renesas Electronics Corporation 2SJ546-E

    Power Field-Effect Transistor, 15A I(D), 60V, 0.155ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics 2SJ546-E 87 1
    • 1 -
    • 10 -
    • 100 $1.56
    • 1000 $1.30
    • 10000 $1.16
    		Buy Now

    Renesas Electronics Corporation 2SJ542E

    SILICON P CHANNEL MOS FET Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SJ542E 911
    • 1 -
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    2SJ54 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SJ544

    Abstract: DSA003643
    Contextual Info: 2SJ544 Silicon P Channel MOS FET High Speed Power Switching ADE-208-648A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		2sj544ade-208-648a220abdsa003643 PDF

    2SJ545

    Abstract: DSA003643 Hitachi 2SJ
    Contextual Info: 2SJ545 Silicon P Channel MOS FET High Speed Power Switching ADE-208-643A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220CFM D G 1 2


    Original     		2sj545ade-208-643a220cfmdsa003643+1hitachi 2sj PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Contextual Info: 2SJ548 Silicon P Channel MOS FET High Speed Power Switching ADE-208-639A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ548 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2sj548ade-208-639ahitachi 2sjhitachi dsa002757 PDF

    Hitachi DSA002751

    Abstract: Diode 10a
    Contextual Info: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching ADE-208-652B Z 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D


    Original     		2sj543ade-208-652b220abd-85622+2hitachi dsa002751diode 10a PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Contextual Info: 2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ541 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2sj541ade-208-590bhitachi 2sjhitachi dsa002757 PDF

    2SJ540

    Abstract: Hitachi DSA00337
    Contextual Info: 2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2


    Original     		2sj540ade-208-642a220abhitachi dsa00337 PDF

    ADE-208-642A

    Contextual Info: 2SJ540 Silicon P Channel MOS FET REJ03G0887-0300 Previous: ADE-208-642A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching


    Original     		2sj540rej03g0887-0300ade-208-642aprss0004ac-a+1o-220ab PDF

    2SJ541

    Abstract: 2SJ541-E PRSS0004AC-A
    Contextual Info: 2SJ541 Silicon P Channel MOS FET REJ03G0888-0400 Previous: ADE-208-590B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		2sj541rej03g0888-0400ade-208-590bprss0004ac-a+2o-220ab2sj541-e PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Contextual Info: 2SJ545 Silicon P Channel MOS FET High Speed Power Switching ADE-208-643A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline 2SJ545 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2sj545ade-208-643ahitachi 2sjhitachi dsa002757 PDF

    Hitachi 2SJ

    Abstract: Hitachi DSA002757
    Contextual Info: 2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline 2SJ540 Absolute Maximum Ratings (Ta = 25°C)


    Original     		2sj540ade-208-642ahitachi 2sjhitachi dsa002757 PDF

    Contextual Info: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching HITACHI Features • Low on-resistance Rds oii = 0.042i2 typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline T O -2 2 0 A B 1. G ate 2. Drain (Flange) 3. S ource


    OCR Scan     		2sj543042i2ade-208-652b PDF

    2SJ543

    Abstract: Hitachi 2SJ DSA003643
    Contextual Info: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching ADE-208-652B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		2sj543ade-208-652b220abhitachi 2sj+1dsa003643 PDF

    2SJ548

    Abstract: 2SJ548-E PRSS0003AD-A
    Contextual Info: 2SJ548 Silicon P Channel MOS FET REJ03G0895-0300 Previous: ADE-208-639A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		2sj548rej03g0895-0300ade-208-639aprss0003ad-a+2o-220fm2sj548-e PDF

    2SJ544

    Abstract: DSA003784 Hitachi DSA003784
    Contextual Info: 2SJ544 Silicon P Channel MOS FET High Speed Power Switching ADE-208-648A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		2sj544ade-208-648a220abdsa003784+1hitachi dsa003784 PDF

    2SJ542

    Abstract: 2SJ542-E PRSS0004AC-A
    Contextual Info: 2SJ542 Silicon P Channel MOS FET REJ03G0889-0400 Previous: ADE-208-591B Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		2sj542rej03g0889-0400ade-208-591bprss0004ac-a+2o-220ab2sj542-e PDF

    2SJ540

    Abstract: 2SJ540-E PRSS0004AC-A
    Contextual Info: 2SJ540 Silicon P Channel MOS FET REJ03G0887-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS on = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0004AC-A


    Original     		2sj540rej03g0887-0400prss0004ac-ao-220ab+12sj540-e PDF

    2SJ546

    Abstract: 2SJ546-E PRSS0003AE-A
    Contextual Info: 2SJ546 Silicon P Channel MOS FET REJ03G0893-0300 Previous: ADE-208-638A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.


    Original     		2sj546rej03g0893-0300ade-208-638aprss0003ae-a+2o-220c2sj546-e PDF

    2SJ540

    Abstract: Hitachi 2SJ DSA003643
    Contextual Info: 2SJ540 Silicon P Channel MOS FET High Speed Power Switching ADE-208-642A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220AB D G 1 2


    Original     		2sj540ade-208-642a220abhitachi 2sj+1dsa003643 PDF

    2SJ541

    Abstract: DSA003643
    Contextual Info: 2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		2sj541ade-208-590b220abdsa003643 PDF

    2SJ541

    Abstract: Hitachi DSA00400 Hitachi DSA0040
    Contextual Info: 2SJ541 Silicon P Channel MOS FET High Speed Power Switching ADE-208-590B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		2sj541ade-208-590b220abhitachi dsa00400+1hitachi dsa0040 PDF

    2SJ543

    Abstract: Hitachi DSA00396
    Contextual Info: 2SJ543 Silicon P Channel MOS FET High Speed Power Switching ADE-208-652B Z 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		2sj543ade-208-652b220abhitachi dsa00396 PDF

    2SJ547

    Abstract: Hitachi DSA00396
    Contextual Info: 2SJ547 Silicon P Channel MOS FET High Speed Power Switching ADE-208-658A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.16 Ω typ. • 4 V gete drive devices • High speed switching Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source


    Original     		2sj547ade-208-658a220fmhitachi dsa00396 PDF

    Hitachi DSA00280

    Contextual Info: 2SJ542 Silicon P Channel MOS FET High Speed Power Switching ADE-208-591B Z 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–220AB D G 1


    Original     		2sj542ade-208-591b220abd-85622+1hitachi dsa00280 PDF

    2SJ545

    Abstract: 2SJ545-E PRSS0003AE-A
    Contextual Info: 2SJ545 Silicon P Channel MOS FET REJ03G0892-0400 Rev.4.00 Jun 05, 2006 Description High speed power switching Features • Low on-resistance RDS on = 0.11 Ω typ. • Low drive current • 4 V gate drive devices • High speed switching Outline RENESAS Package code: PRSS0003AE-A


    Original     		2sj545rej03g0892-0400prss0003ae-ao-220c+12sj545-e PDF