220FM Search Results
220FM Price and Stock
SERPAC Electronic Enclosures SE1220FML,BKCASE PLAS 28.310"L X 22.330"W |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SE1220FML,BK | Bulk | 3 | 1 |
|
Buy Now | |||||
|
SE1220FML,BK |
|
Get Quote | ||||||||
SERPAC Electronic Enclosures SE1220FML1220 CASE WITH FOAM AND METAL KE |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SE1220FML | Bulk | 1 |
|
Buy Now | ||||||
|
SE1220FML | Bulk | 1 |
|
Get Quote | ||||||
SERPAC Electronic Enclosures SE1220FML,GMCASE PLAS GM 28.310"L X 22.330"W |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
SE1220FML,GM | Bulk | 1 |
|
Buy Now | ||||||
OMRON Industrial Automation TL8012-S1220FMINTERLOCK SOLENOID RELEASE 5PST |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
TL8012-S1220FM | Bulk |
|
Buy Now | |||||||
Nextgen Components TO220FMD10N65FMOSFET TO-220F N 650V 10A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
|
TO220FMD10N65F | Tube | 1,000 |
|
Buy Now | ||||||
220FM Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. |
Original |
R8005ANX O-220FM R1102A | |
R6020ENXContextual Info: R6020ENX Nch 600V 20A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 0.20W ID 20A PD 50W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. |
Original |
R6020ENX O-220FM R1102A R6020ENX | |
|
Contextual Info: R6004ENX Nch 600V 4A Power MOSFET Datasheet lOutline VDSS 600V RDS on (Max.) 980mW ID 4A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. |
Original |
R6004ENX 980mW O-220FM R1102A | |
|
Contextual Info: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device |
Original |
SSM2761F O-220FM O-220CFM SSM2761 265VAC | |
|
Contextual Info: R5016ANX Nch 500V 16A Power MOSFET Datasheet l Outline VDSS 500V RDS on (Max.) 0.27Ω ID ±16A PD 50W TO-220FM l Inner circuit l Features 1) Low on-resistance. |
Original |
R5016ANX O-220FM | |
|
Contextual Info: Data Sheet 10V Drive Nch MOSFET R6010ANX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 8.0 1.2 1.3 14.0 2.5 15.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. |
Original |
R6010ANX O-220FM R6010ANX R1120A | |
R5009FNXContextual Info: Data Sheet 10V Drive Nch MOSFET R5009FNX Structure Silicon N-channel MOSFET Dimensions Unit : mm TO-220FM φ3.2 10.0 4.5 2.5 8.0 15.0 Features 1)Fast reverse recovery time (trr) 12.0 2.8 14.0 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage |
Original |
R5009FNX O-220FM R1120A R5009FNX | |
2SB1103
Abstract: 2SB1390 DSA003644
|
Original |
2SB1390 ADE-208-870 O-220FM 2SB1103 2SB1390 DSA003644 | |
2SB1391
Abstract: 2SB791 DSA003644
|
Original |
2SB1391 ADE-208-871 O-220FM 2SB1391 2SB791 DSA003644 | |
2SB1399
Abstract: 2SB955 DSA003644
|
Original |
2SB1399 ADE-208-873 O-220FM 2SB1399 2SB955 DSA003644 | |
OP103
Abstract: 2SD2106 DSA003645
|
Original |
2SD2106 ADE-208-922 O-220FM OP103 2SD2106 DSA003645 | |
|
Contextual Info: 2SK3153 Silicon N Channel MOS FET High Speed Power Switching HITACHI 2nd. Edition February 1999 Features • Low on-resistance Rds = 65 m ii typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-220FM Absolute Maximum Ratings Ta = 25 °C |
OCR Scan |
2SK3153 O-220FM | |
|
Contextual Info: 2SB1403 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 O 1 1. Base 2. Collector 3. Emitter O- C M M t- ^VW 3.0 k£2 Typ 180 £2 (Typ) Ö l' 2SB1403 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings |
OCR Scan |
2SB1403 O-220FM 2SB1106. | |
|
Contextual Info: 2SD2105 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM n 1 2 3 2 1. Base 2. Collector 3. Emitter 1^ 1^ 1.5 kQ. Typ [1 130 Q. (Typ) ¿ 3 ¡t'D 2SD2105 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Rating |
OCR Scan |
2SD2105 -220FM | |
|
|
|||
2sd2102
Abstract: 2SD1558 Hitachi DSA00164
|
Original |
2SD2102 O-220FM D-85622 2sd2102 2SD1558 Hitachi DSA00164 | |
Hitachi DSA001650Contextual Info: 2SB1401 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 55 kΩ Typ 3 2SB1401 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –300 |
Original |
2SB1401 O-220FM D-85622 Hitachi DSA001650 | |
Hitachi DSA001650Contextual Info: 2SD2113 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 4 kΩ Typ 300 Ω (Typ) 3 2SD2113 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage |
Original |
2SD2113 O-220FM D-85622 Hitachi DSA001650 | |
2SK1778
Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
|
OCR Scan |
2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK13003 2SK1665 2SK1778 27.145 2SK1296 2SJ172 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302 | |
2SD2101Contextual Info: 2SD2101 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2 Î 1 Base 2 Collector 3 Emitter 3 ki3 Typ 1 50 Í2 (Typ) ¿ 3 2SD2101 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit Collector to base voltage |
OCR Scan |
2SD2101 -220FM 2SD2101 | |
|
Contextual Info: 2SD2108 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2108 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 80 V Collector to em itter voltage V cE O 80 V Emitter to base voltage |
OCR Scan |
2SD2108 -220FM | |
|
Contextual Info: 2SD2111 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2111 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage |
OCR Scan |
2SD2111 -220FM | |
|
Contextual Info: 2SB1392 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Em itter Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit C o lle cto r to base vo lta g e ^G B O -7 0 V C o lle cto r to e m itte r vo lta g e |
OCR Scan |
2SB1392 O-220FM D-85622 | |
|
Contextual Info: 2SD2112 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2SD2112 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 120 V Collector to em itter voltage VcEO 120 V Emitter to base voltage |
OCR Scan |
2SD2112 O-220FM | |
2SD2103Contextual Info: 2SD2103 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier Outline TO -220FM 2SD2103 Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to base voltage ^C B O 60 V Collector to em itter voltage V cE O 60 V Emitter to base voltage |
OCR Scan |
2SD2103 -220FM 2SD2103 | |