220CFM Search Results

TO-220CFM

Abstract: TO220CFM
Contextual Info: 富鼎先進電子股份有限公司 ADVANCED POWER ELECTRONICS CORP. 產 品 尺 寸 圖 Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 φ L4 MIN NOM MAX A 4.30 4.60 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30

Contextual Info: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device

Hitachi DSA001651

Contextual Info: 2SK2426 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM

Hitachi DSA001651

Contextual Info: 2SK2423 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM

Contextual Info: 2SJ321 Silicon P C h a n n e l M O S F E T Application T0-220CFM High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC —DC

Hitachi DSA002749

Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM

DG12

Abstract: Hitachi DSA002748
Contextual Info: 2SK2529 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D 12 3 1. Gate

Hitachi DSA002780

Contextual Info: 2SK2425 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

Hitachi DSA002781

Contextual Info: 2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

TO220CFM

Abstract: TO-220CFM to 220cfm PRSS0003AE-A
Contextual Info: Previous Code TO-220CFM / TO-220CFMV 1.0 ± 0.2 1.15 ± 0.2 0.6 ± 0.1 2.54 φ 3.2 ± 0.2 2.54 4.5 ± 0.3 2.7 ± 0.2 15.0 ± 0.3 10.0 ± 0.3 MASS[Typ.] 1.9g 2.5 ± 0.2 13.6 ± 1.0 RENESAS Code PRSS0003AE-A 12.0 ± 0.3 JEITA Package Code ⎯ 4.1 ± 0.3 Package Name

02n60i

Contextual Info: AP02N60I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test BVDSS D Fast Switching Characteristic Simple Drive Requirement G 650V RDS ON 8 ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power

2sk1153

Abstract: dc-dc converter hitachi HITACHI DIODE 2SK1862 2SK2431 Hitachi DSA00396 HITACHI 2SK* TO-3
Contextual Info: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

Contextual Info: AP18P10GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower On-resistance BVDSS Simple Drive Requirement RDS ON -100V 160m ID Fast Switching Characteristic G D S -12A TO-220CFM(I) Description D Advanced Power MOSFETs from APEC provide the designer

AP9575GI

Contextual Info: AP9575GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge BVDSS -60V ▼ Simple Drive Requirement RDS ON 70mΩ ▼ Fast Switching Characteristic ID G D S -16A TO-220CFM(I) Description D

AP02N60I

Abstract: to 220cfm
Contextual Info: AP02N60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching ▼ Simple Drive Requirement G BVDSS 600V RDS ON 8Ω ID 2A S Description The TO-220CFM package is widely preferred for all commercialindustrial applications. The device is suited for switch mode power

Hitachi DSA002749

Contextual Info: 2SK2116, 2SK2117 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM

Hitachi DSA002780

Contextual Info: 2SK2431 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

Hitachi DSA002781

Contextual Info: 2SK2426 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

2SK1157

Abstract: 2SK1158 2SK2116 2SK2117 Hitachi DSA003755
Contextual Info: 2SK2116, 2SK2117 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate

Hitachi DSA001651

Contextual Info: 2SK2425 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM

HITACHI DIODE

Abstract: 2SK1159 2SK2423 Hitachi DSA00388
Contextual Info: 2SK2423 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM D 12

2SK1155

Abstract: 2SK1156 2SK2114 2SK2115 Hitachi DSA00395
Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D 12 3 1. Gate

h7n0308cf

Abstract: Hitachi DSA00280
Contextual Info: H7N0308CF Silicon N Channel MOS FET High Speed Power Switching ADE-208-1570A Z 2nd. Edition Aug. 2002 Features • Low on-resistance • RDS(on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220CFM

2SK2529

Abstract: DSA0037440
Contextual Info: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM