TO220CFM Search Results

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ultra high frequency FETs or transistors A08 smd transistor lg tv electronic diagram SMD TRANSISTOR fet
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products December, 2000 Product Marketing Dept. Multi Purpose Semiconductor Business Division Semiconductor & Integrated Circuits, HITACHI Ltd. HITACHI HITACHI SMALL SIGNAL TRANSISTOR 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi′s or any third party′s patent, copyright,

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter

6679gi

Abstract: AP6679GI
Contextual Info: AP6679GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Lower On-resistance G BVDSS -30V RDS ON 9mΩ ID -48A S Description Advanced Power MOSFETs from APEC provide the

TO-220CFM

Abstract: TO220CFM
Contextual Info: 富鼎先進電子股份有限公司 ADVANCED POWER ELECTRONICS CORP. 產 品 尺 寸 圖 Package Outline : TO-220CFM E A Millimeters SYMBOLS c2 φ L4 MIN NOM MAX A 4.30 4.60 4.90 A1 2.30 2.65 3.00 b b1 c c2 0.50 0.70 0.90 0.95 1.20 1.50 0.45 0.65 0.80 2.30

AP05FN50I

Abstract: TO220C
Contextual Info: AP05FN50I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Fast trr Performance D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G BVDSS 500V RDS ON 1.6Ω ID 4.5A S Description AP05FN50 provide high blocking voltage to overcome voltage surge

04n70bi

Abstract: 04N70B 04N70 TO220CFM AP04N70BI-H TO-220CFM
Contextual Info: AP04N70BI-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 700V RDS ON 2.4Ω ID G 4A S Description AP04N70 series are specially designed as main switching devices for

70t03g

Abstract: 70t03 70T03GI diode marking 33a on semiconductor marking 33a on semiconductor
Contextual Info: AP70T03GI RoHS-compliant Product Advanced Power Electronics Corp. ▼ Fast Switching Performance N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Single Drive Requirement ▼ Full Isolation Package BVDSS 30V RDS ON 9mΩ ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with

a 2763i

Abstract: 2763I ap2763I ap2763 AP2763I-A AP2763IA apec TO220C A/fet 2763i
Contextual Info: AP2763I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Isolation Full Package BVDSS 750V RDS ON 1.45Ω ID ▼ Fast Switching Characteristics 8.0A G S Description AP2763 series are specially designed as main switching devices for

AP3989I

Abstract: TO220CFM
Contextual Info: AP3989I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 600V RDS ON 0.75Ω ID G 9A S Description Advanced Power MOSFETs from APEC provide the designer with the best

AP04N60

Abstract: AP04N60I
Contextual Info: AP04N60I RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 2.35Ω ID 4A G S Description G AP04N60 series are specially designed as main switching devices for

Contextual Info: SSM2761F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Repetitive avalanche rated BV D DSS 600V Fast switching R DS ON 1.0Ω Simple drive requirement I D 10A S TO-220FM(F) S TO-220CFM(I) G S Description The SSM2761 is specially designed as a main switching device

dc-dc converter hitachi

Abstract: HITACHI DIODE 2SK1404 2SK2118 DSA003639
Contextual Info: 2SK2118 Silicon N-Channel MOS FET ADE-208-1348 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator, DC-DC converter,Motor Control

2SJ545

Abstract: DSA003643 Hitachi 2SJ
Contextual Info: 2SJ545 Silicon P Channel MOS FET High Speed Power Switching ADE-208-643A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.11 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching Outline TO–220CFM D G 1 2

2SK1155

Abstract: 2SK1156 2SK2114 2SK2115 DSA003639
Contextual Info: 2SK2114, 2SK2115 Silicon N-Channel MOS FET ADE-208-1346 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator

HAT1058C

Abstract: HAT2106G HAT1068C HAT1062G Hitachi MOSFET HAT3016G H5P0201MF BB304M FU 3024 wba sot23
Contextual Info: HITACHI SMALL SIGNAL TRANSISTOR HITACHI Small Signal Transistor Products September, 2002 Product Marketing Dept. Multi Purpose Semiconductor Business Unit Semiconductor & Integrated Circuits, Hitachi, Ltd. HITACHI SMALL SIGNAL TRANSISTOR Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,

Contextual Info: AP30T10GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 55mΩ ID G 16A S Description Advanced Power MOSFETs from APEC provide the designer with the

2sj172

Abstract: Hitachi 2SJ Hitachi DSA001651
Contextual Info: 2SJ443 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V Gate drive can be driven from 5 V source Suitable for Switching regulator, DC - DC converter

Hitachi DSA001651

Contextual Info: 2SJ323 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter

Hitachi DSA001651

Contextual Info: 2SK2591 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter

2SK2206

Abstract: Hitachi DSA001652
Contextual Info: 2SK2206 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance Low drive current High speed switching 4 V gate drive device can be driven from 5 V source Suitable for DC-DC converter, Motor control

Hitachi DSA001651

Contextual Info: 2SK2426 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM

Hitachi DSA001651

Contextual Info: 2SK2423 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter. Outline TO-220CFM

2SK2390

Abstract: Hitachi DSA001651
Contextual Info: 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

2sj322

Abstract: Hitachi DSA001651
Contextual Info: 2SJ322 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter