APEC Search Results

Contextual Info: 3.0x1.0 mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: APECVA3010MGC Mega Green Features Description z 3.0mmx1.0mm SMT LED, 2.0mm thickness. The Mega Green source color devices are made with z Low power consumption. AlGaInP on GaAs substrate Light Emitting Diode.

APECVA3010QBC

Contextual Info: 3.0x1.0 mm SMD CHIP LED LAMP Part Number: APECVA3010QBC/D PRELIMINARY SPEC Blue ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC DISCHARGE SENSITIVE DEVICES Features Description z 3.0mmx1.0mm SMT LED, 2.0mm thickness. The Blue source color devices are made with AlGaInN on

APECVA3010P3BT

Contextual Info: 3.0x1.0 mm PHOTOTRANSISTOR Part Number: APECVA3010P3BT PRELIMINARY SPEC Description Features z 3.0mmx1.0mm SMT LED, 2.0mm thickness. Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp. z Package : 2000pcs / reel.

AP70T03GH

Abstract: AP70T03GJ 60V 60A TO-252 N-CHANNEL
Contextual Info: AP70T03GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching 30V RDS ON 9mΩ ID G ▼ RoHS Compliant BVDSS 60A S Description Advanced Power MOSFETs from APEC provide the

20n15gh

Abstract: ap20N15gh 20n15g AP20N15 TO252 rthjc TO-252 MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET to-252
Contextual Info: AP20N15GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower Gate Charge ▼ Fast Switching Characteristic BVDSS 150V RDS ON 100mΩ ID G 20A S Description G Advanced Power MOSFETs from APEC provide the

AP60T10GS

Abstract: MOSFET VDS 20V TO-220
Contextual Info: AP60T10GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 100V RDS ON 23mΩ ID G 57A S Description Advanced Power MOSFETs from APEC provide the

6679GR

Contextual Info: AP6679GR RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G BVDSS -30V RDS ON 9mΩ ID -75A S Description Advanced Power MOSFETs from APEC provide the

Contextual Info: AP4432GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D D ▼ Fast Switching Characteristic D D G S S 30V RDS ON 15mΩ ID ▼ RoHS Compliant SO-8 BVDSS 10A S Description D The Advanced Power MOSFETs from APEC provide the

AP75N07AGP

Abstract: id40ac
Contextual Info: AP75N07AGP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 75V RDS ON 11mΩ ID G 80A S Description Advanced Power MOSFETs from APEC provide the

AP60U03GH

Contextual Info: AP60U03GH RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 12mΩ ID G 40A S Description The Advanced Power MOSFETs from APEC provide the designer with

40p03gp

Abstract: 40P03G AP40P03GP 40p03 AP40P03
Contextual Info: AP40P03GP RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS -30V RDS ON 28mΩ ID G -30A S Description The Advanced Power MOSFETs from APEC provide the designer with

AP9980GM

Contextual Info: AP9980GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D2 ▼ Single Drive Requirement ▼ Surface Mount Package D1 D2 D1 BVDSS 80V RDS ON 52mΩ ID 4.6A G2 S2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the

apec

Abstract: ap431 from apec AP431
Contextual Info: Pb Free Plating Product ADJUSTABLE PRECISION SHUNT REGULATOR APEC DESCRIPTION AP431 FEATURES The AP431 is a low voltage three terminal adjustable shunt Low voltage operation 2.5V regulator with a guaranteed thermal stability over applicable Adjustable output voltage V0 =VREF to 18V

Contextual Info: AP70T03AS/P Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching BVDSS 30V RDS ON 9mΩ ID G 60A S Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

ap75n07

Abstract: id40ac
Contextual Info: AP75N07GW RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 75V RDS ON 11mΩ ID G 90A S Description Advanced Power MOSFETs from APEC provide the

09N20H

Abstract: AP09N20H AP09N20J
Contextual Info: AP09N20H/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristics D BVDSS RDS ON ID 200V 380mΩ 8.6A G S Description Advanced Power MOSFETs from APEC provide the designer with

6679gi

Abstract: AP6679GI
Contextual Info: AP6679GI RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Single Drive Requirement ▼ Lower On-resistance G BVDSS -30V RDS ON 9mΩ ID -48A S Description Advanced Power MOSFETs from APEC provide the

AP9435GK

Contextual Info: AP9435GK RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Low Gate Charge ▼ Fast Switching G -30V RDS ON 50mΩ ID S SOT-223 BVDSS -6A D Description D The Advanced Power MOSFETs from APEC provide the

AP99T06GP

Abstract: APEC
Contextual Info: AP99T06GP RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 60V RDS ON 4.2mΩ ID G 80A S Description Advanced Power MOSFETs from APEC provide the

95T06GP

Abstract: AP95T06GS AP95T06GP 95T06GS marking codes transistors SSs
Contextual Info: AP95T06GS/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ Fast Switching Characteristic BVDSS 60V RDS ON 8.5mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide the designer with

AP2315GEN

Abstract: A2 SOT-23 mosfet
Contextual Info: AP2315GEN RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Package Outline ▼ Surface Mount Device BVDSS -30V RDS ON 1.25Ω ID - 840mA S SOT-23 Description G Advanced Power MOSFETs from APEC provide the designer

90t03g

Abstract: 90t03gr AP90T03GR 90t03 AP90T03g
Contextual Info: AP90T03GR RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower On- resistance D ▼ Simple Drive Requirement ▼ Fast Switching Characteristic BVDSS 30V RDS ON 4mΩ ID G 75A S Description Advanced Power MOSFETs from APEC provide thede signer with

AP70T03GP

Abstract: AP70T03GS
Contextual Info: AP70T03GS/P RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Low Gate Charge ▼ Fast Switching Speed BVDSS 30V RDS ON 9mΩ ID G 60A S Description Advanced Power MOSFETs from APEC provide the

9977GH

Abstract: AP9977GJ 9977GH transistor 9977GJ ap9977GH marking code E2 and gate marking codes transistors SSs
Contextual Info: AP9977GH/J-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 60V ▼ Single Drive Requirement RDS ON 100mΩ ▼ Surface Mount Package ID ▼ Low Gate Charge D 11A G ▼ RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the