2SK2529 Search Results

DG12

Abstract: Hitachi DSA002748
Contextual Info: 2SK2529 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D 12 3 1. Gate

Hitachi DSA00276

Contextual Info: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F Z 7th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline

K2529

Contextual Info: 2SK2529 Silicon N-Channel MOS FET HITACHI ADE-208-356F 7th. Edition Application H ig h sp eed p o w e r sw itc h in g Features • L o w o n -re sista n c e • R d s «, = 7 m£2 typ. • H ig h sp e e d sw itc h in g • 4 V g ate d riv e d e v ic e can b e d riv e n fro m 5 V so u rce

2SK2529

Abstract: DSA0037440
Contextual Info: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM

2SK2529

Abstract: Hitachi Scans-001
Contextual Info: 2SK2529 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • • R ds „„ = 7 m il typ. High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO -220CFM

Contextual Info: A D E - 2 0 8 - 3 5 6 F Z 2SK2529 Silicon N Channel MOS FET 7th. Edi ti on HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V source

Hitachi DSA001652

Contextual Info: 2SK2529 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM D 12 3 1. Gate

Contextual Info: 2SK2529 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed pow er switching Features • Low on-resistance • R ds „„ = 7 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 2SK2529 Absolute Maximum Ratings (Ta = 25 °C)

2SK2529

Abstract: Hitachi DSA00116
Contextual Info: 2SK2529 Silicon N Channel MOS FET Application TO–220CFM High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece 2 1 1 2 3 3 1. Gate 2. Drain 3. Source

Hitachi DSA002781

Contextual Info: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-220CFM

Hitachi DSA00279

Contextual Info: 2SK2529 Silicon N-Channel MOS FET ADE-208-356F 7th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline 2SK2529 Absolute Maximum Ratings (Ta = 25°C)

2SK2529

Abstract: 2SK2529-E PRSS0003AE-A
Contextual Info: 2SK2529 Silicon N Channel MOS FET REJ03G1014-0800 Previous: ADE-208-356F Rev.8.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance RDS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source

Hitachi DSA001652

Contextual Info: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

2SK2529

Abstract: 2SK2553
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Hitachi DSA00279

Contextual Info: 2SK2553 L , 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-357H (Z) 9th. Edition January 1999 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source

Hitachi DSA002749

Contextual Info: 2SK2553 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 1 2 1 2 3 3 D

2SK2529

Abstract: 2SK2553 2SK25 Hitachi DSA00116
Contextual Info: 2SK2553 Silicon N Channel MOS FET Application LDPAK High speed power switching 4 Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece 2 1 1 1 4 2 3 2 3 1. Gate 2. Drain 3. Source

2SK25

Abstract: 2SK2529 2SK2586 PE-50 Hitachi DSA00116
Contextual Info: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK2529

Abstract: 2SK2529-E PRSS0003AE-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid