2SK2586 Search Results

Hitachi DSA001652

Contextual Info: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate

Hitachi DSA00276

Contextual Info: 2SK2586 Silicon N-Channel MOS FET ADE-208-358C Z 4th. Edition Aug. 1995 Application High speed power switching Features • • • • Low on-resistance R DS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK25

Abstract: 2SK2529 2SK2586 PE-50 Hitachi DSA00116
Contextual Info: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)

C1030

Contextual Info: 2SK2586 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance RDSK.ni = 7 m£2 lyp. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P I 1 2 Ui 3 1. Gate 2. Drain

2SK2529

Abstract: 2SK2586 Hitachi DSA00336
Contextual Info: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G

2SK2586

Abstract: 2SK2586-E PRSS0004ZE-A SC-65
Contextual Info: 2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 Previous: ADE-208-358C Rev.5.00 Sep 07, 2005 Application High speed power switching Features • Low on-resistance RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source

Contextual Info: 2SK2586 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • R ds „„ = 7 m il typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline 3. Source

2SK2586

Contextual Info: A D E - 2 0 8 - 3 5 8 C Z 2SK2586 Silicon N Channel MOS FET 4th. Edition HITACHI Application High speed power switching Features • Low on-resistance R D S (o n ) = 7 m ß t y p . • High speed switching • 4 V gate drive device can be driven from 5 V souece

Contextual Info: 2SK2586 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • Low on–resistance RDS on = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V souece S 2 1 G 1 2 3 3 1. Gate 2. Drain (Flange)

Hitachi DSA002713

Contextual Info: 2SK2586 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance RDS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1 G 2 3 1. Gate

Hitachi DSA002780

Contextual Info: 2SK2586 Silicon N-Channel MOS FET ADE-208-358 C 4th. Edition Application High speed power switching Features • • • • Low on-resistance R DS on = 7 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline TO-3P D 1

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

TO220CFM

Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
Contextual Info: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2SK2728

Abstract: 2sk2729
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SJ1334

Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Contextual Info: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9