2SK1835 Search Results

Hitachi DSA002748

Contextual Info: 2SK1835 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500V High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline and Equivalent Circuit

2SK1835

Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

2SK1835

Abstract: 2SK1835-E PRSS0004ZE-A SC-65
Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SK1835

Contextual Info: 2SK1835 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • H igh breakdow n voltage V DSS = 1500V • H igh speed sw itching • Low drive current • No secondary breakdow n • Suitable for sw itchirigregulator Outline and Equivalent Circuit

2SK1835

Abstract: Hitachi DSA00395
Contextual Info: 2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500V High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit

Contextual Info: 2SK1835 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.5k V(BR)GSS (V)20 I(D) Max. (A)4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)10 @Pulse Width (s) (Condition)10u Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

1500v 2a power fet

Abstract: 2SK1835 Vdss 1500V DSA003639
Contextual Info: 2SK1835 Silicon N-Channel MOS FET ADE-208-1325 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500V) High speed switching Low drive current No secondary breakdown Suitable for switchingregulator

Contextual Info: 2SK1835 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • High breakdown voltage VDSS= 1500V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator

Hitachi DSA002779

Contextual Info: 2SK1835 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500V High speed switching Low drive current No secondary breakdown Suitable for switchingregulator Outline and Equivalent Circuit

2SK1835

Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SK1835

Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0300 Previous: ADE-208-1325 Rev.3.00 Apr 27, 2006 Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No secondary breakdown

Contextual Info: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator

2SK1835

Contextual Info: 2SK1835 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • • High breakdown voltage VDSS = 1500V High speed switching Low drive current No secondary breakdown Suitable for switchingregulator 1 2 3 D 1. Gate

2SK1796

Abstract: 2SK1804 2SK1713 2SK1784 2SK1794 2SK1772 2SK1773 2SK1774 2SK1775 2SK1785
Contextual Info: - 122 - f m £ tt ffl £ æ m i \ V * * K V js * m * Se 3 Vg s * X I* X P d /P c h (V) * * (A) a * (W) I gss (max) (A) Vg s (V) Ä (min) (max) Vd s (A) (V) (A) ft ft ä t ff) (max) V d s (V) (V) (V) (Ta=25tî) 1 Í S m (min) (S) Id (A) Vd s % ? (V) Id

k312 display

Abstract: 2SJ120 2SJ113 121A-4 2SJ117 2SK311 2SK399 2SK416 2SK429 2SK430
Contextual Info: 6 HITACHI 1.5 D-Series Evolution : Switching MOSFETs 1.5.1 Di-Series Hitachi switching MOSFETs use the vertical structure described on page 4 and known generically as the D-Series. This structure is better suited to switching applications. Power MOSFET technology has much in

2sk mosfet

Abstract: 2SJ113 2SJ120 2sj119 k312 display K312 2sc2610 2SK1197 2SK511 mosfet 2sk
Contextual Info: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2sk122

Abstract: HA11511CNT HA17384 2SC2611 HRP100 2sc2610 ha17385 2SC4927 1ss81 HA16666
Contextual Info: 30 HITACHI 5.5 Power Conversion 1 Switching Power Supply Control ICs range Type,No Vcc (V) max ICC imA) max F (kHz) max HA16654A 40 13 HA16664A 40 HA16666 Introduction lo (mA) max Topr fC ) 500 100 -20 to +85 Suitable for DP-18 FP-14 forward method 7 200

crt 1700

Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23