2SK1197
Contextual Info: 2SK1197 SILICON N-CHANNEL ENHANCEMENT MOS FET m m & ^ C “ 2 00p F • • r - h • v - x r i 500V typ. • y u j > •y - x m lOOOVmin., 1500V typ. • JiIÍSÜT K ì f V X ó<± ë i,>0 1. Source 2. Drain 3. G ate (Dim ensions in mm) I ÿ/s I = 1 5 0 m S typ.
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2sk1197150ms7c-25o-126+1ta-25
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2SH14
Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Contextual Info: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>
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2sk11972sj1602sj1612sj162+122sj3512sj3522sk10562sk10872sk10582sk22202sh142sh212sh112sh196am134ak19
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2sk1197
Abstract: Hitachi DSA00493
Contextual Info: 2SK1197 Silicon N-Channel enhanced MOS FET Application High frequency amplifier Features • High endurance capability against static electrical breakdown C = 200pF — Between Gate from Source : 500 V Typ — Between Drain from Source : 1000 V Min, 1500 V Typ
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2sk1197200pfo-126d-85622+1hitachi dsa00493
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Contextual Info: 2SK1197 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)9 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.0 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20 Minimum Operating Temp (øC)
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2sk1197 |
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2sk mosfet
Abstract: 2SJ113 2SJ120 2sj119 k312 display K312 2sc2610 2SK1197 2SK511 mosfet 2sk
Contextual Info: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output
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2sc26102sc26112sc48282sc26u+102sk2962sk mosfet2sj1132sj1202sj119k312 displayk3122sk11972sk511mosfet 2sk
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2sk1197
Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
Contextual Info: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)
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2sk11532sk11542sk11552sk1156+112sk11572sk11722sk117350nstyp2sk11942sk11952sk11972501lnec 2501l2sk11582sk1159
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9
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d-856222sk 42072sk1762sk975 equivalent+72sj1772sj318pm45502c2sk22252sk1058 2sj162pwm 100w audio amplifier2sk1336 equivalent
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ade-40850502capc ups es 500 circuit diagramsk 100 gale 065 tf+82sk1058 mosfet application notesapc ups circuit diagram es 725general instrument data book2sk2264esi 252 impedance metertransistor bf 175pf01442sk212
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Contextual Info: blE 2 S K D • MMTtiEQS 001325b OTM « H i m 1 1 9 7 H I TACHI/ OPTOELECTRONICS SILICON N-CHANNEL ENHANCEMENT MOS FET lo it r HIGH FREQUENCY AMPLIFIER ■ FEATURES • High Electro-static Destruction Voltage {C — 200 PF> — Gate to Source Voltage 500 V typ.
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001325bo-1262sk1197 |
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2sk122
Abstract: HA11511CNT HA17384 2SC2611 HRP100 2sc2610 ha17385 2SC4927 1ss81 HA16666
Contextual Info: 30 HITACHI 5.5 Power Conversion 1 Switching Power Supply Control ICs range Type,No Vcc (V) max ICC imA) max F (kHz) max HA16654A 40 13 HA16664A 40 HA16666 Introduction lo (mA) max Topr fC ) 500 100 -20 to +85 Suitable for DP-18 FP-14 forward method 7 200
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ha16654adp-18hai66s4afp-14+13ha16666dp-16fp-16ha161072sk122ha11511cntha173842sc2611hrp1002sc2610ha173852sc49271ss81
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crt 1700
Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300
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2sc45892sc46922sc47442sc4745+152sc47462sc47472sc47962sc47972sc48772sc4878crt 1700transistor 2sk2sc2611transistor 2sd23002sc26102sc43672sc48962sc49272sd1094
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2SK975 equivalent
Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC
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2sk11512sk11522sk18622sk1863+162sk11552sk11572sk13132sk13142sk15402sk15412sk975 equivalentk2796equivalent transistor 2skpower mos fet 2sj 2skmodel 2sk216transistor 2sk 1180sk16262sk215 equivalentdrum driver2sj44
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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o220fsp-10sp-12sp-12ta+111560d2sk1058 equivalentmbm300bs6hitachi mosfet2sk1270transistor 2sk 122sk16452sk975 equivalentequivalent transistor 2sk2sk1058 mosfet application notes2sc297
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2SK2225
Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.
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pm50150k31max2sk22252sj150+82sk10582sk215 equivalent2sk135 application note2sk975 equivalent2sk24162sk135 audio application2sk135 audio amplifier2sk2225 equivalent
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200W MOSFET POWER AMP
Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30w0-50w0-100w00-200w+152sk5792sk5802sk11512sk11522sk11532sk1154200w mosfet power ampha11511cnt2sk mosfet2sc26102sk13272sk12252sk2962sk13422sk1635
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Horizontal TV block
Abstract: 2SC2611 HA11511CNT 11CNT 2SK1197 television block diagram 2sc2610 16107 2SK296 2SC4692
Contextual Info: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output
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2sc26102sc26112sc48282sc26u+82sk296horizontal tv blockha11511cnt11cnt2sk1197television block diagram161072sc4692
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HA11511CNT
Abstract: 2SC2611 Horizontal TV block 2SC4896 horizontal COIL vertical IC tv crt GN12015C GN12030E 2SK296 GN4530C
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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gn4530cgn6010agn6015agn6020c+13gn6030cgn6050egn6075egn9060egn12015cgn12030eha11511cnt2sc2611horizontal tv block2sc4896horizontal coilvertical ic tv crt2sk296
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hitachi j50
Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9
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d-85622hitachi j502sk1168ha16116 "cross reference+7transistor marking yb 826ade-408gg 84marking code n-channel mos field effect transistor2sk1058 2sj1622sj1772sj182 equivalent
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2SK1197
Contextual Info: LIE D 2 S K 1197 • 4 4 ^ 2 0 5 001325b 0T4 ■ H IT 4 H IT A C H I/ O P T O E L E C T R O N IC S SILICON N-CHANNEL ENHANCEMENT MOS FET rrrtT HIGH FREQUENCY AMPLIFIER ■ FEATURES • High Electro-static Destruction Voltage {C — 200 pF) — Gate to Source Voltage 500 V typ.
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2SK2225 equivalent
Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}
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2sk11512sk11522sk18622sk1863+162sk11552sk11562sk13132sk13142sk15402sk15412sk2225 equivalent2sk1762 equivalent2sk2221 equivalentc23732sk215 equivalent2sj182 equivalent2sk1317 equivalent2sk1336 equivalent2sk975 equivalent2sk1058 equivalent
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hitachi mosfet audio
Abstract: D4L DIODE 2SK2830 2SK2225 2SJ214LS 2SK1919LS 2sk2829 Hitachi MOSFET 2SK1058 transistors 2SK1317
Contextual Info: Power MOSFET Quick Reference Literature Order Number Revision Number Hitachi Semiconductor Author Name When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole
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o-220haf2001500pcsxno-92mod+16o-126modo-126fmo-220abo-220fmo-220csp-10hitachi mosfet audiod4l diode2sk28302sk22252sj214ls2sk1919ls2sk2829hitachi mosfet2sk1058transistors 2sk1317
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2SJ56 2sk176
Abstract: 2SK176 2sk1058 2SJ162 HITACHI 2Sk176 2SJ75 2sk133 2Sj48 2sJ50 mosfet 2sj56 2SK1058 MOSFET APPLICATION NOTES 2sk135 application
Contextual Info: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G H orizon tal y D eflection' Coil , Vertical ' Deflection , Coil 1 I Horizontal Deflection Video output - "I Focus _ _ Electrocie” B O . Deflection Signal m Vertical Ci Vertical
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2sc26102sc26112sc48282sc26u+112sk2962sj56 2sk1762sk1762sk1058 2sj162hitachi 2sk1762sj752sk133 2sj482sj50 mosfet2sj562sk1058 mosfet application notes2sk135 application
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2SC4927
Abstract: 2SK1269 2sc2610 transistor 2sd2300 transistor 2sk 2SC2611 2SC4896 TO-22OAB 2SB566 2SB566A
Contextual Info: 24 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment. 4.2 Planar Process Technology
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2sc26u2sc48282sc26112sk296+102sd22992sc49272sk12692sc2610transistor 2sd2300transistor 2sk2sc4896to-22oab2sb5662sb566a
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2SJ127
Abstract: 2SK1275 2SK1202 HA11511CNT 2SK557 2sc2610 2SK551 2SK296 2SC4927 2SC4692
Contextual Info: HITACHI 35 5.9 Television and CRT Displays B lo ck D ia g ra m Video R o— G "I Focus _ _ Electrocie” - B O H o riz o n ta l y D eflection' Coil , Vertical ' Deflection , Coil 1 I H orizontal Deflection Video outp u t . Deflection Signal m Vertical
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2sc26102sc26112sc48282sc26u+92sk2962sj1272sk12752sk1202ha11511cnt2sk5572sk5512sc49272sc4692
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