2SK2121 Search Results

c9012

Abstract: C90-12 2SK2121
Contextual Info: 2SK2121 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter

2SK2121

Contextual Info: 2SK2121 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC

2SK2121

Abstract: Hitachi DSA001652
Contextual Info: 2SK2121 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK2121 Si li con N Ch a nn el MOS FET Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC

Contextual Info: 2SK2203 Silicon N C h a n n e l M O S F E T Application High speed power switching Features • • • • Low on—resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC - DC

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK2121

Abstract: 2SK2203
Contextual Info: 2SK2203 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V cource • Suitable for Switching regulator, DC – DC

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SK2728

Abstract: 2sk2729
Contextual Info: Replacements for Power MOS FET We recommend that you consider replacing your current Power MOS FET when you develop a new product because the following product types will become obsolete. Current type Replacement 2SK741 2SK1667 2SK970 2SK2927 2SK971 2SK2928, 2SK2929

Hitachi DSA001652

Contextual Info: 2SK2203 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter

Contextual Info: 2SK2203 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC-DC converter