2SJ55 Search Results

2SJ555

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 3 1.5 • Can be driven by a 4 V power source • Low on-state resistance RDS(on)1 = 155 mΩ MAX. (VGS = –10 V, ID = –1.0 A)

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ551 L , 2SJ551(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.050Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ551(L),2SJ551(S)

Hitachi DSA002757

Contextual Info: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S 2

D1380

Abstract: 2SJ559
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.4 +0.1 –0.05 +0.1 0.65–0.15 0.16+0.1 –0.06 3 1.5 2.8±0.2 The 2SJ557A is a switching device which can be driven directly

2SJ550

Abstract: Hitachi 2SJ Hitachi DSA00315
Contextual Info: 2SJ550 L , 2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK

2SJ559

Abstract: SC-75
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SJ559 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1

2SJ553

Abstract: 2SJ553L-E PRSS0004AE-A
Contextual Info: 2SJ553 L , 2SJ553(S) Silicon P Channel MOS FET REJ03G0900-0400 (Previous: ADE-208-650B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.028 Ω typ. • Low drive current. • 4 V gate drive devices.

2SJ551

Abstract: 2SJ551L-E PRSS0004AE-A
Contextual Info: 2SJ551 L , 2SJ551(S) Silicon P Channel MOS FET REJ03G0898-0400 (Previous: ADE-208-647B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.050 Ω typ. • Low drive current. • 4 V gate drive devices.

2SJ557A

Abstract: marking xs
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm FEATURES 0.4 +0.1 –0.05 +0.1 0.65–0.15 1.5 0 to 0.1 1 • 4 V drive available • Low on-state resistance RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −1.0 A)

HITACHI 2SJ56

Abstract: 2SJ56 2SJ56 2sk176 2Sk176 HITACHI 2SJ56 HITACHI 2SJ55 2Sj55 HITACHI 2SK176 2Sk175 HITACHI Hitachi 2sk176 2sj56
Contextual Info: blE D • 4MTbEDS DGlEfi^fl 2SJ55,2SJ56 &Z3 MHIT4 HITACHI/ OPTOELECTRONICS SILICON P-CHANNEL MOS FET LOW FREQU EN CY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.

651b

Abstract: 2SJ552 Hitachi DSA00236
Contextual Info: 2SJ552 L ,2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK

2SJ554

Abstract: Hitachi 2SJ DSA003643
Contextual Info: 2SJ554 Silicon P Channel MOS FET High Speed Power Switching ADE-208-628B Z 3rd. Edition Jun. 1998 Features • Low on-resistance R DS(on) = 0.028Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S

2SJ552

Abstract: S07-5 Hitachi 2SJ
Contextual Info: 2SJ552 L , 2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jul. 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK

2SJ550

Abstract: 2SJ550L-E PRSS0004AE-A
Contextual Info: 2SJ550 L , 2SJ550(S) Silicon P Channel MOS FET REJ03G0897-0300 (Previous: ADE-208-633A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.075 Ω typ. • Low drive current. • 4 V gate drive devices.

651b

Abstract: 2SJ552 2SJ552L-E PRSS0004AE-A 2SJ552STL 2SJ552L
Contextual Info: 2SJ552 L , 2SJ552(S) Silicon P Channel MOS FET REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices.

2SJ56 2sk176

Abstract: HITACHI 2SJ56 2SJ56 2SK176 2Sk175 HITACHI 2SK175 DIODE T25 4 lo 2SJ55 2Sk176 HITACHI 2SJ56 HITACHI
Contextual Info: blE D • MMTbEOS DDlEflTfl ATT ■ H I T M 7 ^ 3 * ? 2SJ55,2SJ56~ &2 S H I T A C H I / O P T O E L E C T R O N I C S SILICON P-CHANNEL MOS F ET LOW FREQUENCY POWER AMPLIFIER Complementary Pair with 2SK175, 2SK176 ■ FEATURES • High Power Gain. • Excellent Frequency Response.

2SJ557

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ557 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.4 +0.1 –0.05 • Can be driven by a 4 V power source • Low on-state resistance

Hitachi 2SJ

Abstract: Hitachi DSA002757
Contextual Info: 2SJ550 L , 2SJ550(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-633A (Z) 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.075Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 2SJ550(L),2SJ550(S)

Hitachi DSA002751

Abstract: ear 3000
Contextual Info: 2SJ552 L , 2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition June 1, 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline

2SK176

Abstract: 2Sk176 HITACHI 2Sk175 HITACHI HITACHI 2Sk176 2SJ56 2sk176 2SK175 2SJ56 HITACHI 2SJ56 2SJ56 HITACHI Hitachi 2sk176 2sj56
Contextual Info: ' bl E D • 4 4 cJb2DS dOlBOH ñ ü l IHIT4 2SK17S,2SK176 HITACHI/* OPTOELECTRONICS SILICON N-CHANNEL MOS FET LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ55, 2SJ56 ■ FEATURES • High Power Gain. • • Excellent Frequency Response. High Speed Switching.

2SJ555

Abstract: Hitachi 2SJ Hitachi DSA00395
Contextual Info: 2SJ555 Silicon P Channel MOS FET High Speed Power Switching ADE-208-634A Z 2nd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.017Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline TO–3P D G 1 S 2

2SJ555

Abstract: 2SJ555-E PRSS0004ZE-A SC-65
Contextual Info: 2SJ555 Silicon P Channel MOS FET REJ03G0902-0300 Previous: ADE-208-634A Rev.3.00 Sep 07, 2005 Description High speed power switching Features • Low on-resistance RDS (on) = 0.017 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching.