D1380 Search Results

D1380

Abstract: 2SK3107 SC-75
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D1380

Abstract: 2SJ559 SC-75
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D1380

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _¿ ¿ P A 1 8 5 6 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The ,uPA1856 is a switching device which can be driven directly by a 2.5 V power source.

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR _ /¿PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The JUPA1815 is a switching device which can be 8 driven directly by a 2.5-V power source. 5 The JUPA1815 features a low on-state resistance and

Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3107 is a switching device which can be driven directly by a 0.3 ±0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for

UPA1856GR

Abstract: PA1856 PA1856GR-9JG
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5 V power source. The µPA1856 features a low on-state resistance and

D1380

Abstract: 2SJ559
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SJ559 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ559 has excellent switching characteristics, and is

PA1913

Abstract: UPA1913TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 • Can be driven by a 2.5 V power source • Low on-state resistance

D13806

Abstract: UPA1912TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent

D1380

Abstract: PA1900
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The µPA1900 is a switching device which can be driven 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5 V power source.

2SJ559

Abstract: SC-75
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ559 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SJ559 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1

D1380

Abstract: Nec 658
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1814 is a switching device which can be driven directly by a 4 V power source. The µPA1814 features a low on-state resistance and

D1380

Abstract: PA1912 SC-95 UPA1912TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1912 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION 0.32 +0.1 –0.05 0.65–0.15 directly by a 2.5-V power source. +0.1 The µPA1912 features a low on-state resistance and excellent

D1380

Abstract: PA1856 PA1856GR-9JG
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

D1380

Abstract: PA1815 UPA1815GR
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PA1913

Abstract: SC-95 UPA1913TE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1913 is a switching device which can be driven

PA1815

Abstract: UPA1815GR
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1815 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The µPA1815 is a switching device which can be driven directly by a 2.5-V power source. The µPA1815 features a low on-state resistance and

marking tg

Abstract: PA1900
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1900 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1900 is a switching device which can be driven 0.32 +0.1 –0.05 2.8 ±0.2 so on. 6 5 4 1 2 3 1.5 The µPA1900 features a low on-state resistance and

D1380

Abstract: PA1913 SC-95 UPA1913TE
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

UPA1856GR

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1856 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The µPA1856 is a switching device which can be driven directly by a 2.5-V power source. The µPA1856 features a low on-state resistance and