Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SK3107 Search Results

    2SK3107 Datasheets (3)

    NEC
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2SK3107
    NEC N-Channel MOS Field Effect Transistor for High Speed Switching Original PDF 54.22KB 8
    2SK3107-T1
    NEC Nch enhancement type MOS FET Original PDF 54.22KB 8
    2SK3107-T2
    NEC Nch enhancement type MOS FET Original PDF 54.22KB 8
    SF Impression Pixel

    2SK3107 Price and Stock

    Renesas Electronics Corporation

    Renesas Electronics Corporation 2SK3107-T1-AT

    Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3107-T1-AT 16,455 1,191
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.28
    Buy Now
    Rochester Electronics 2SK3107-T1-AT 16,455 1
    • 1 -
    • 10 -
    • 100 $0.30
    • 1000 $0.25
    • 10000 $0.22
    Buy Now

    Renesas Electronics Corporation 2SK3107-T1-A

    Trans MOSFET N-CH 30V 0.1A 3-Pin SC-75 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SK3107-T1-A 3,202 1,191
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.28
    Buy Now
    Rochester Electronics 2SK3107-T1-A 3,202 1
    • 1 -
    • 10 -
    • 100 $0.30
    • 1000 $0.25
    • 10000 $0.22
    Buy Now

    2SK3107 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: DATA S H EE T MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm The 2SK3107 is a switching device which can be driven directly by a 0.3 ±0.05 2.5-V power source. The 2SK3107 has excellent switching characteristics, and is suitable for


    OCR Scan
    2sk3107sc-7513802e PDF

    D1380

    Abstract: 2SK3107 SC-75
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING PACKAGE DRAWING Unit : mm DESCRIPTION The 2SK3107 is a switching device which can be driven directly by a 0.1 +0.1 –0.05 0.3 ± 0.05 2.5-V power source.


    Original
    2sk3107sc-75d1380 PDF

    2SK3107

    Abstract: SC-75
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3107 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1


    Original
    2sk3107sc-75 PDF

    D1380

    Abstract: 2SK3107 SC-75
    Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3107 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK3107 is a switching device which can be driven directly by a 0.3 +0.1 –0 2.5 V power source. 0.15 +0.1


    Original
    2sk3107sc-75d1380 PDF

    smd code marking NEC

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 52 10A 38w smd transistor smd mark code 38w SMD 8PIN IC MARKING CODE 251 marking code E1 SMD 5pin 6pin dip SMD mosfet MARKING code T mosfet SMD CODE PACKAGE SOT89 52 10A marking code E2 p SMD Transistor TRANSISTOR SMD MARKING CODE MP
    Contextual Info: Power Management Devices Selection Guide > Power MOSFETs > ESD Protection Diodes > Regulators August 2008 www.am.necel.com/powermanagement TABLE OF CONTENTS Contents Low-Voltage Power By Part


    Original
    g18756eu3v0sg00smd code marking nectransistor smd code package sot89 52 10a38w smd transistor+7smd mark code 38wsmd 8pin ic marking code 251marking code e1 smd 5pin6pin dip smd mosfet marking code tmosfet smd code package sot89 52 10amarking code e2 p smd transistortransistor smd marking code mp PDF

    D1380

    Abstract: 2SK3107 SC-75
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    d13802sk3107sc-75 PDF

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    c11178jjcv0if0012c11178jjcv0ifmil-hdbk-217milmil10100+11mil-hdbk-217fit2sk2500upc1037haupc648c2sk927nec 2sk2500upd5201gupa64haupd6360c2sh24n13t1 PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original
    2sk25002sk1543upd16861gsnec 2sk2500+6upa1559htransistor nec 2sk25002sc4496amc10087f12sa733aupd16861 PDF

    MPA2733GR

    Abstract: MPA2733 2sk4075 MOSFET 8PIN nec power mosfet bare die np 2SK4213 mpa602t 2SJ647M 2SKxxxx NP100P04PDG
    Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original
    o-263o-252mpa672tmpa675t+16mpa677tbmpa678tbmpa679tbm8e0710jd18669jj3v0sgd18669jj3v0sg003mpa2733grmpa27332sk4075mosfet 8pinnec power mosfet bare die np2sk4213mpa602t2sj647m2skxxxxnp100p04pdg PDF

    NEC 10F triac

    Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
    Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2


    Original
    g10748ejdv0sg00nec 10f triac10f triac necscr 5p4m+72p4m pin diagramthyristor battery charger 2p4m3s4m scrringing choke converterequivalent scr 2p4m3s4m thyristor2sk1272 PDF

    R2A20134

    Abstract: RKS160AKU diode 1n4007 toshiba triac BT 130 grm188b31h104k EKY-500ELL101MHB5D EE16c SR732ATTDR GRM188B31H473K R2A20134SP
    Contextual Info: APPLICATION NOTE R2A20134SP R03AN0004EJ0100 Rev.1.00 Sep 16, 2011 Application Note 1. General Description R2A20134SP is a control IC for LED lighting. It has two operation modes, Critical Conduction mode CRM and fixed switching frequency mode. User can choose one suitable mode for their purpose.


    Original
    r2a20134spr03an0004ej0100r2a20134rks160aku+7diode 1n4007 toshibatriac bt 130grm188b31h104keky-500ell101mhb5dee16csr732attdrgrm188b31h473k PDF

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    mil-hdbk-217c11178ejcv0iftransistor nec 2sk2500nec 2sk2500+82sk2500n13t12sk2500 equivalentupc1037haupc648c2sh252sk2500 transistor2sh24 PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    mc10087f1

    Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059
    Contextual Info: 1/89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.


    Original
    ir260/ws260/hs350ir260/hs350mc10087f1mc-10041+8mc-10043mc-10087f1-xxxmc-10044mc-10051bf12sc56642sc5292upc1701cmc-10059 PDF

    TP4506

    Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
    Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4


    Original
    tp4698tp4699tp4700tp4701+16tp4702tp4703tp4658tp4659tp4660tp4661tp4506tp5000ar803tp6244thermistor sck d54tp5056r767tp5310tp6311tp4765 PDF

    2SC5664

    Abstract: 2sc5292 NPN transistor SST 117 D1859 2sK4075 TRANSISTOR 2sc945 2SK4075 PC78L05J 2SK3918 2sk3326
    Contextual Info: Process Trend On-Resistance Reduction with UMOS Technology 1.0 1.0 RDS on (UMOS1 = 1.0) Upper value : Nch 30 V class Lower value : Nch 60 V class 0.8 0.8 1st Generation 0.58 0.64 (Trench) 2nd Generation UMOS 1 Lower On-Resistance 0.46 0.53 3rd Generation


    Original
    d18597ej1v0sg2sc56642sc5292npn transistor sst 117+7d18592sk4075 transistor2sc9452sk4075pc78l05j2sk39182sk3326 PDF

    transistor k2541

    Abstract: K1398 J411 fet k1482 K1484 K679A k2541 k1272 transistor k1272 K1274
    Contextual Info: SMALL-SIGNAL MOS FET SERIES Signal MOS FET A wide line-up from small-signal interface applications to semi-power switching applications Small-signal MOS FETs have been increasingly employed mainly in portable systems as highperformance switching elements that supersede the existing bipolar transistors.


    Original
    d11050ej4v0pf00transistor k2541k1398j411 fet+7k1482k1484k679ak2541k1272transistor k1272k1274 PDF

    C27-C36

    Abstract: TP5000 M1535 a1 RS200M TP4506 TP5056 TP4721 TP5860 J5027 TP4456
    Contextual Info: 1 2 3 4 12 3 4 5 6 7 8 9 6 . M 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 DBI# 0:3 K2 K4 L6 K1 L3 M6 L2 M3 M4 N1 M1 N2 N4 N5 T1 R2 P3 P4 R3 T2 U1 P6 U3 T4 V2 R6 W1 T5 U4 V3 W2 Y1 AB1 1 2 3 4 4 12 4 12 B H_ADS# H_BNR# H_BPRI# L5 ADSTB0#


    Original
    page45page476870bec27-c36+9tp5000m1535 a1rs200mtp4506tp5056tp4721tp5860j5027tp4456 PDF