2SK2596 Search Results

2sk2596

Abstract: Hitachi DSA00307
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. f = 836.5MHz • Compact package capable of surface mounting Outline This Device is sensitive to Elector Static Discharge.

2SK2596

Abstract: pd4555
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier HITACHI 1st. Edition Features • High power output, High gain. High efficiency PG = 12.2dB, Pout = 30.2dBm , -qD = 45 %min. f = 836.5M H z • Compact package capable o f surface mounting Outline UPAK

2SK2596

Abstract: 2SK2596BXTL-E
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting

2SK2596

Abstract: Hitachi DSA0076 ADE-208-1367
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1367 Z 1st. Edition Mar. 2001 Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. (f = 836.5MHz) • Compact package capable of surface mounting

Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0200Z Previous ADE-208-1367(Z Rev.2.00 Apr.20.2004 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting

2SK2596

Abstract: Hitachi DSA002781
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier 1st. Edition Features • High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, ηD = 45 %min. f = 836.5MHz • Compact package capable of surface mounting Outline UPAK 2 1 3 D 4

2SK2596

Abstract: 2SK2596BX REJ03G0207-0300 ADE-208-1367
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 Previous ADE-208-1367(Z Rev.3.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting

2SK2596BXTL-E

Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

2sk408

Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Contextual Info: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SK2596BXTL-E

Abstract: 2SK2596
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Contextual Info: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153