2SK2596BX Search Results

2SK2596BX Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK2596BX		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier	Original	PDF	58.77KB	5
2SK2596BXTL-E		Renesas Technology	Silicon N-Channel MOS FET UHF Power Amplifier	Original	PDF	142.54KB	10

2SK2596BX Price and Stock

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Rochester Electronics LLC 2SK2596BXTL-E MOSFET N-CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK2596BXTL-E	Bulk			167	1 - 10 - 100 - 1000 $1.80 10000 $1.80	Buy Now
Renesas Electronics Corporation 2SK2596BXTL-E 2SK2596BXTL-E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	2SK2596BXTL-E		6,900		183	1 - 10 - 100 - 1000 $1.84 10000 $1.73	Buy Now
Rochester Electronics	2SK2596BXTL-E		6,900		1	1 - 10 - 100 $1.64 1000 $1.47 10000 $1.38	Buy Now

2SK2596BX Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK2596 Abstract: 2SK2596BXTL-E Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596 2SK2596BXTL-E	PDF
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0200Z Previous ADE-208-1367(Z Rev.2.00 Apr.20.2004 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0200Z ADE-208-1367	PDF
2SK2596BXTL-E Abstract: 2SK2596 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
2SK2596 Abstract: 2SK2596BX REJ03G0207-0300 ADE-208-1367 Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 Previous ADE-208-1367(Z Rev.3.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0300 ADE-208-1367 PLZZ0004CA-A Unit2607 2SK2596 2SK2596BX REJ03G0207-0300	PDF
2SK2596BXTL-E Contextual Info: 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%min. f = 836.5 MHz • Compact package capable of surface mounting	Original	2SK2596 REJ03G0207-0400 PLZZ0004CA-A 2SK2596BXTL-E	PDF