2SK1999 Search Results

Contextual Info: 2SK1999 Silicon N-Channel MOS FET HITACHI Application V H F am plifier Features • H igh gain, high efficiency • C om pact package PG = 15 dB , r D = 65% typ f - 200 M Hz) Suitable for push - pull circuit Outline RFPAK-B 4 3 1. Drain 2. Drain 3. Source

2SK1999

Abstract: Hitachi DSA00307
Contextual Info: 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 15 dB, ηD = 65% typ f = 200 MHz • Compact package Suitable for push - pull circuit Outline 2SK1999 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

Hitachi DSA002780

Contextual Info: 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 15 dB, ηD = 65% typ f = 200 MHz • Compact package Suitable for push - pull circuit Outline RFPAK-B 3 4 5 2 1 D D G G S 1. Drain 2. Drain 3. Source

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2sk408

Abstract: 2SK2794 2sk409 2SK1999 ha22002 2SD669A 2SK2595
Contextual Info: GaAs LINEAR IC • H igh frequency linear 1C Type No. Package code MPAK-4 HA21008 5V Function & Characteristics BS tuner Amp.Vcc » 5 V, lo « 32 mA max Status * NF = 8.5 dB typ, PG « 10.5 dB typ (f = 900 MHz) MPAK-5 HA22012 LNA, VDD = 3 V, Idd = 3 mA typ, NF = 1.9 dB

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

2SK410

Contextual Info: High-Gain, High-Output RI7 Power MOS FET Series ain Uses Features • Mobile com m unication • High power, high gain, high effi­ base stations, broadcasting ciency stations, relay sta­ • Tw o-elem ent pack­ tions, wireless equip­ ages suitable for pushH ig h ga in , h i g h e f f i ­

2SK series

Abstract: 2SK1637 2SK2097 2SK2203 1018 636 transistor+2sk 2SK+series
Contextual Info: Index N-Channel 2SK Series 2SK213. 153 2SK214. 153