2SK272 Search Results

Hitachi DSA002758

Contextual Info: 2SK2728 Silicon N Channel MOS FET High Speed Power Switching ADE-208-454 B 3rd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline 2SK2728 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings

Hitachi DSA002780

Contextual Info: 2SK2728 Silicon N Channel MOS FET High Speed Power Switching ADE-208-454 B 3rd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain Flange 3. Source 2SK2728

2SK2724

Abstract: C10535E C10943X MEI-1202
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. 10.0 ±0.3

Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching REJ03G1025-0300 Previous: ADE-208-526A Rev.3.00 Sep 07, 2005 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A

2SK2729

Abstract: 2SK2729-E PRSS0004ZE-A SC-65
Contextual Info: 2SK2729 Silicon N Channel MOS FET High Speed Power Switching REJ03G1027-0300 Previous: ADE-208-455A Rev.3.00 Sep 07, 2005 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A

2SK2726

Abstract: Hitachi DSA00238
Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain

2Sk2723

Abstract: D1062 D10623EJ2V0DS00 16 bit encoder nec 13A C10535E C10943X MEI-1202 13A45
Contextual Info: DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeter • Low On-Resistance 4 ± 0.2 RDS (on) 1 = 40mΩ Max. (VGS = 10 V, ID = 13 A) RDS (on) 2 = 60mΩ Max. (VGS = 4 V, ID = 13 A)

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeter T h is p ro d u c t is N -C h a n n e l M O S F ield E ffe ct T ra n s is to r d e s ig n e d fo r high c u rre n t s w itc h in g a p p lic a tio n s .

Contextual Info: DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeter DESCRIPTION T h is p ro d u c t is N -C h a n n e l M O S F ield E ffe ct T ra n s is to r d e s ig n e d fo r high c u rre n t s w itc h in g s p p lic a tio n s .

Hitachi DSA002758

Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching ADE-208-526 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline 2SK2727 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings

Hitachi DSA002780

Contextual Info: 2SK2725 Silicon N Channel MOS FET High Speed Power Switching ADE-208-452 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline 2SK2725 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA002758

Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline 2SK2726 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA00276

Contextual Info: 2SK2725 Silicon N Channel MOS FET High Speed Power Switching ADE-208-452B Z 3rd. Edition Sep. 1997 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO–220CFM D G 1 2

2SK2728

Abstract: Hitachi DSA00117
Contextual Info: 2SK2728 Silicon N Channel MOS FET High Speed Power Switching ADE-208-454B Z 3rd. Edition Jul. 1997 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source

2SK2726

Abstract: 2SK2727 Hitachi DSA00238
Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching ADE-208-526 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain Flange 3. Source 2SK2727

2SK2727

Abstract: PRSS0004ZE-A SC-65
Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching REJ03G1025-0300 Previous: ADE-208-526A Rev.3.00 Sep 07, 2005 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A

2SK2725

Abstract: PRSS0003AE-A V30016
Contextual Info: 2SK2725 Silicon N Channel MOS FET High Speed Power Switching REJ03G1023-0400 Previous: ADE-208-452B Rev.4.00 Sep 07, 2005 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline

Hitachi DSA00276

Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453B Z 3rd. Edition Sep. 1997 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO–220CFM D G 1 2

2SK2723

Contextual Info: DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE P A C K A G E D IM EN SIO N S in m illim eter D E S C R IP T IO N T his product is N-Channel MOS Field Effect T ransistor designed for high current switching spplications.

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SK2724 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eter T h is p ro d u ct is N -C h a n n e l M O S F ield E ffe ct T ra n s is to r d e sig n e d fo r high cu rre n t sw itch in g a p p lica tio n s.

Hitachi DSA00276

Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching ADE-208-526A Z 2nd. Edition Jul. 1997 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source

2SK2725

Abstract: PRSS0003AE-A v30016
Contextual Info: 2SK2725 Silicon N Channel MOS FET High Speed Power Switching REJ03G1023-0400 Previous: ADE-208-452B Rev.4.00 Sep 07, 2005 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline

K2728

Abstract: A1052 k 2728
Contextual Info: 2SK2728 Silicon N Channel MOS FET High Speed Power Switching HITACHI ADE-208-454 B 3rd. Edition Features • Low on-resistance • High speed switching • Low drive current • Avalanche ratings Outline T O -3P 1. Gate 2. Drain Flange 3. Source 1048 2SK2728

S-1062

Contextual Info: 2SK2729 Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO-3P 1. Gate 2. Drain Flange 3. Source 1056 ADE-208-455 A 2nd. Edition 2SK2729