2SK2726 Search Results

2SK2726

Abstract: Hitachi DSA00238
Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO–220CFM D G 1 2 S 3 1. Gate 2. Drain

Hitachi DSA002758

Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline 2SK2726 Absolute Maximum Ratings Ta = 25°C

Hitachi DSA00276

Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453B Z 3rd. Edition Sep. 1997 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline TO–220CFM D G 1 2

2SK2726

Abstract: PRSS0003AE-A
Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching REJ03G1024-0400 Previous: ADE-208-453B Rev.4.00 Sep 07, 2005 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline

Hitachi DSA002780

Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching ADE-208-453 B 3rd. Edition Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline 2SK2726 Absolute Maximum Ratings Ta = 25°C

2SK2726

Abstract: PRSS0003AE-A
Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching REJ03G1024-0400 Previous: ADE-208-453B Rev.4.00 Sep 07, 2005 Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Avalanche ratings Outline

Contextual Info: 2SK2726 Silicon N Channel MOS FET High Speed Power Switching HITACHI Features • • • • • Low on-resistance High speed switching Low drive current N o secondary breakdown Avalanche ratings Outline TO-220CFM 1. G ate 2. Drain 3. Source 1034 ADE-208-453 B

2SK3235

Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

Hitachi DSA002758

Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching ADE-208-526 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline 2SK2727 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK2726

Abstract: 2SK2727 Hitachi DSA00238
Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching ADE-208-526 A 2nd. Edition Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain Flange 3. Source 2SK2727

Hitachi DSA00276

Contextual Info: 2SK2727 Silicon N Channel MOS FET High Speed Power Switching ADE-208-526A Z 2nd. Edition Jul. 1997 Features • • • • Low on-resistance High speed switching Low drive current Avalanche ratings Outline TO–3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

2SJ1334

Abstract: 2SK3235 HSK81 Hitachi DSAUTAZ006 HA16141
Contextual Info: HA16142P/FP PFC and PWM Controller Application Note ADE-504-006 Z Rev.0 5/17/02 Hitachi, Ltd. Notice When using this document, keep the following in mind: 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

2SK2225 equivalent

Abstract: 2SK1762 equivalent 2sk2221 equivalent C2373 2SK215 equivalent 2SJ182 equivalent 2SK1317 equivalent 2SK1336 equivalent 2SK975 equivalent 2sk1058 equivalent
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 Recommended products in each power range Recommended Products in Each Power Range Type power supply Voltage Up to 10 w 10 W to 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 100 V to 132 V AC □ 2SK1151 {3.5}

2SK2726

Abstract: PRSS0003AE-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid