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    2SK3379

    Abstract: Hitachi DSA002730
    Contextual Info: 2SK3379 L , 2SK3379(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-939 (Z) 1st. Edition Mar. 2001 Features • Low on-resistance R DS(on) = 3.8 m typ. • 4 V gate drive device • High speed switching Outline LDPAK 4 4 D 1 1 G S 2 3 2 3 1. Gate


    Original     		2sk3379ade-208-939d-85622hitachi dsa002730 PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Contextual Info: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		hat2038r/hat2038rjade-208-666chat2038rhat2038rj+12pdf\7420ehat1044mhat1053m2sk32352sk3379hitachi dsa00276hat1040t2sj5172sk1835to220cfm2sk3421hat1053 PDF

    TO220CFM

    Abstract: TO220FM HAT1053M 2sk3148 2SK2978 hat2070 TO-220aB rr Hitachi DSA00276 2SK2096 HAT1040T
    Contextual Info: HAT1024R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-476G Z 8th. Edition Jun. 1997 Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP–8 8 5 7 6 3 1 2 4 5 6 D D


    Original     		hat1024rade-208-476gpdf\7420ehat1044m+12hat1053mhat2053mhat2054mto220cfmto220fm2sk31482sk2978hat2070to-220ab rrhitachi dsa002762sk2096hat1040t PDF