2SD2300 Search Results

QSMA

Abstract: 2SD2300
Contextual Info: HITACHI 2SD2300-Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM * High breakdown voltage V C BO = I 5 0 0 V • Built-in damper diode type Absolute Maximum Ratings Ta = 25°C Item Symbol Rating Unit Collector to emitter voltage

2SD2300

Contextual Info: Inchange Semiconductor Product Specification 2SD2300 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High breakdown voltage ・Built-in damper diode APPLICATIONS ・For color TV horizontal output deflection applications PINNING PIN DESCRIPTION

crt 1700

Abstract: transistor 2sk 2SC2611 transistor 2sd2300 2sc2610 2SC4747 2sc4367 2SC4896 2SC4927 2SD1094
Contextual Info: 25 HITACHI Table 17 : Power Switching Transistors Range Cont'd Typical Electrical Characteristics Absolute Maximum Ratings Package T0-3P-FM TO-3 Type Number 2SC4589 2SC4692 2SC4744 2SC4745 2SC4746 2SC4747 2SC4796 2SC4797 2SC4877 2SC4878 2SC4879 2SD2299 2SD2300

Contextual Info: 2SD2300 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCBO- 1500 V • Built-in damper diode type Outline 2SD2300 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to em itter voltage

transistor 2sd2300

Abstract: Hitachi DSA001650
Contextual Info: 2SD2300 Silicon NPN Triple Diffused Application CTV horizontal deflection output Features • High breakdown voltage VCBO = 1500 V • Built-in damper diode type Outline TO-3PFM 2 1. Base 2. Collector 3. Emitter 1 2 1 ID 3 3 2SD2300 Absolute Maximum Ratings Ta = 25°C

Contextual Info: 2SD2300 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0 = 1500 V • Built-in damper diode type Outline 2SD2300 Absolute Maximum Ratings Ta = 25 °C Item Sym bol Ratings Unit Collector to em itter voltage

Contextual Info: 2SD2300 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0= 1500 V • Built-in damper diode type Outline 2SD2300 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to em itter voltage

2SD2300

Contextual Info: SavantIC Semiconductor Product Specification 2SD2300 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFM package ·High breakdown voltage ·Built-in damper diode APPLICATIONS ·For color TV horizontal output deflection applications PINNING PIN DESCRIPTION

Contextual Info: HITACHI 2SD2300 Silicon NPN Triple Diffused CTV Horizontal Deflection Output Feature TO-3PFM High breakdown voltage VrCBO ; 1500 V • B uili-in damper diode type Absolute M axim um Ratings Ta = 25°C Item Symbol Rating Unit Collector to emitter voltage

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

2sk mosfet

Abstract: 2SJ113 2SJ120 2sj119 k312 display K312 2sc2610 2SK1197 2SK511 mosfet 2sk
Contextual Info: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

2SD2334

Abstract: 2SD2350 2SD2333 2SD2328 2SD2363 ZSD2361 2SD2312 2SD2331 2SD2323 2SD2294
Contextual Info: Ta=25'C, *Ef](iTc=25'C m z tt & 2SD2294 H i H out 2SD2295 S i H out 2SD2296 H i H out 2SD2297 H i H out 2SD2298 0i H out 2SD2299 H i H out Vc b o Vc e o (V) (V) 1500 1500 1500 p * '• (A) 800 800 800 1 Di ^ *. aBU ink) m (W) I M ^ 14 (Ta=25‘ C) [*EP(átyjH¡S3

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

BUT11APX equivalent

Abstract: BU4508DX equivalent 2SD1876 2Sd1651 equivalent BYS21-45 smd zener diode color band 2SD1878 data sheet 2SC5296 equivalent BT151-600R BUK98150 spice
Contextual Info: Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

200W MOSFET POWER AMP

Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow

2sD1555

Abstract: 2SD4391 2SM583 2SD1483 2SD1554 2SD1994A D1866 2SD1164 2SD1347 2SD2404
Contextual Info: - 252 - m tt £ T y p e No. € M a nuf. Z * SANYO He ^ TOSHIBA 2SD 1850 tfi T 2SD 1851 H. j=É 2SD 1852 = & 2SD 1 853 ^ H # 2S D 1854 H £ 2S D 1855 O — A 2SC3746 oori • ]occ <¡0 □— A □— A □— A 2SDÌ826 2SD400 2SC3666 2 S D 1857 i m NEC B

Horizontal TV block

Abstract: 2SC2611 HA11511CNT 11CNT 2SK1197 television block diagram 2sc2610 16107 2SK296 2SC4692
Contextual Info: HITACHI 5.9 Television and CRT Displays 35 Block Diagram m Video Ro— G B O . Deflection Signal Vertical H orizontal y Deflection' Coil , Vertical ' Deflection , Coil 1 Horizontal Deflection Video output "I Focus _ _ Electrocie” I Ci Vertical Output

HA11511CNT

Abstract: 2SC2611 Horizontal TV block 2SC4896 horizontal COIL vertical IC tv crt GN12015C GN12030E 2SK296 GN4530C
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES

NEC 2SD1564

Abstract: 2SC3296 2sd2394 2012 NEC 2SD1993 2sd1780 2SD1995 2SD1991R 2SC4488 2SD1558
Contextual Info: - 256 - M £ Type No. M % a Manuf. SANYO 2 TOSHIBA NEC 2SD 1986 □ —A 2SD1190 2SD686 2SD1564 2SD 1987 □—A 2SD1825 2SD1414 2SD1595 2SD 1988 □ —A ÍZ. HITACHI 2SD1558 * ± FU JITSU fé T MATSUSHITA □ —A T 2SD 1991 r fé T 2SD1991A 2SD 1992 y

2sc2899 transistor

Abstract: 2SC4739 2SD1527 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899
Contextual Info: 24 HIT ACH I/ O P T O E L E C T R O N I C S blE ]> • 44^205 0013776 TO? ■ HIT4 HITACHI 4. Power Bipolar Transistors 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.