2SK260 Search Results

2SK260 Datasheets (66)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SK260	Hitachi Semiconductor	Power Transistors Data Book	Scan	PDF	127.11KB	1
2SK260	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	128.51KB	1
2SK260	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	101.94KB	1
2SK260	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF	81.62KB	1
2SK260	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF	42.69KB	1
2SK2600	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
2SK2600	Toshiba		Original	PDF	44.05KB	9
2SK2601	Toshiba	SILICON N CHANNEL MOS TYPE, FIELD EFFECT TRANSISTO	Original	PDF	419.32KB	6
2SK2601	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
2SK2601	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK2601	Toshiba		Original	PDF	44.05KB	9
2SK2601	Toshiba	N-Channel Enhancement MOSFET	Scan	PDF	285.42KB	5
2SK2601(F)	Toshiba	2SK2601 - MOSFET N-CH 500V 10A 2-16C1B	Original	PDF	424.36KB	6
2SK2602	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

2SK2602	Toshiba	N-Channel MOSFET	Original	PDF	413.66KB	6
2SK2602	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SK2602	Toshiba		Original	PDF	44.05KB	9
2SK2602	Toshiba	Field Effect Transistor Silicon N Channel MOS Type	Scan	PDF	310.09KB	5
2SK2602	Toshiba	Silicon N channel field effect transistor for high speed, high voltage switching applications, switching regulator applications	Scan	PDF	278.02KB	5
2SK2602(F,T)	Toshiba	2SK2602 - MOSFET N-CH 600V 6A 2-16C1B	Original	PDF	418.29KB	6

2SK260 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SK2605 Trans MOSFET N-CH Si 800V 5A 3-Pin(3+Tab) TO-220NIS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK2605		364			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2SK2605		291			1 $14.98 10 $14.98 100 $11.65 1000 $10.66 10000 $10.66	Buy Now
ComSIT USA	2SK2605		350			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK2605(Q)
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Quest Components	2SK2605(Q)		3,039			1 $3.32 10 $3.32 100 $3.32 1000 $1.25 10000 $1.25	Buy Now
Toshiba America Electronic Components 2SK2604 5 A, 800 V, 2.2 OHM, N-CHANNEL, SI, POWER, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK2604		5			1 $16.00 10 $12.00 100 $12.00 1000 $12.00 10000 $12.00	Buy Now
ComSIT USA	2SK2604		8,268			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK2605QT SILICON N CHANNEL MOS TYPE (PI-MOSIII) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	2SK2605QT		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK2608 N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, SWITCHING REGULATOR APPLICATIONS) / Trans MOSFET N-CH Si 900V 3A 3-Pin(3+Tab) TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Win Source Electronics	2SK2608		21,598			1 - 10 - 100 $1.10 1000 $0.73 10000 $0.73	Buy Now

2SK260 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) Low leakage current	Original	2sk2605	PDF
2-10P1B Abstract: 2SK2608 Contextual Info: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)	OCR Scan	2sk2608 2-10p1b	PDF
K2608 Abstract: 2SK2608 2-10P1B Contextual Info: 2SK2608 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅢ 2SK2608 ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 3.73Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 2.6 S (標準)	Original	2sk2608 o-220ab sc-46 2-10p1b +2k2608 2002/95/ec	PDF
K2606 Abstract: 2SK2606 Contextual Info: 2SK2606 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2606 DC−DC Converter, Relay Drive and Motor Drive Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) z High forward transfer admittance	Original	2sk2606 k2606	PDF
K2602 Abstract: 2SK2602 SC-65 transistor marking 6A Contextual Info: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : Rd S (O N )~ 0.9O (Typ.)	OCR Scan	2sk2602 k2602 sc-65 transistor marking 6a	PDF
K2601 Abstract: 2SK2601 SC-65 Contextual Info: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS	OCR Scan	2sk2601 k2601 sc-65	PDF
Contextual Info: TO SHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSHI i ^ \ci a n 7 MF • ». m HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance	OCR Scan	2sk2607 20kfl	PDF
K2607 TOSHIBA Abstract: 2SK2607 K2607 toshiba K2607 SC-65 VNQ marking MOS *k2607 Contextual Info: TOSHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2607 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9MAX. Low Drain-Source ON Resistance	OCR Scan	2sk2607 k2607 toshiba k2607 toshiba k2607 +2sc-65 vnq marking mos	PDF
K2607 Abstract: toshiba K2607 K2607 TOSHIBA K2607 transistor transistor k2607 toshiba transistor k2607 2SK2607 TOSHIBA 2SK2607 SC-65 Contextual Info: 2SK2607 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2607 Chopper Regulator, DC−DC Converter and Moter Drive Applications Low drain−source ON resistance : RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance : \|Yfs\|= 7.0 S (typ.)	Original	2sk2607 k2607 toshiba k2607 k2607 toshiba +5k2607 transistor transistor k2607 toshiba transistor k2607 2sk2607 toshiba sc-65	PDF
K2604 Abstract: toshiba k2604 toshiba transistor k2604 2SK2604 Contextual Info: 2SK2604 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2604 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2sk2604 k2604 toshiba k2604 toshiba transistor k2604	PDF
K2601 Abstract: 2SK2601 SC-65 Contextual Info: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 ^ Q MAY •	OCR Scan	2sk2601 k2601 sc-65	PDF
2-10P1B Abstract: 2SK2608 Contextual Info: TOSHIBA 2SK2608 SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RßS (ON) = 3.73 ü, (Typ.) High Forward Transfer Admittance : \|Yfs\| = 2.6 S (Typ.)	OCR Scan	2sk2608 2-10p1b	PDF
toshiba K2601 Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2sk2601 toshiba k2601 k2601 toshiba transistor k2601 +2sc-65 toshiba 2-16c1b	PDF
toshiba K2601 Abstract: K2601 jeita sc-65 2SK2601 Contextual Info: 2SK2601 東芝電界効果トランジスタシリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 7.0 S (標準)	Original	2sk2601 sc-65 2-16c1b k2601 +32002/95/ec toshiba k2601 jeita sc-65	PDF

K2603 Contextual Info: 2SK2603 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2603 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.6 S (typ.)	Original	2sk2603 k2603	PDF
K2605 Abstract: K2605 transistor 2SK2605 K2605 TOSHIBA Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 3.8 S (typ.) z Low leakage current	Original	2sk2605 k2605 k2605 transistor k2605 toshiba	PDF
toshiba K2601 Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65 Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 7.0 S (typ.)	Original	2sk2601 toshiba k2601 toshiba transistor k2601 k2601 +1sc-65	PDF
2-10P1B Abstract: 2SK2608 Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) l High forward transfer admittance : \|Yfs\|= 2.6 S (typ.) l Low leakage current	Original	2sk2608 2-10p1b	PDF
k2605 Abstract: K2605 transistor K2605 TOSHIBA 2SK2605 transistor k2605 Contextual Info: 2SK2605 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2605 Switching Regulator Applications z Unit: mm Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.) : \|Yfs\| = 3.8 S (typ.) z High forward transfer admittance z Low leakage current	Original	2sk2605 k2605 k2605 transistor k2605 toshiba +1transistor k2605	PDF
2SK2602 Abstract: SC-65 Contextual Info: TOSHIBA 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd S(ON)“ 0.9O (Typ.)	OCR Scan	2sk2602 sc-65	PDF
2SK2602 Abstract: SC-65 Contextual Info: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) l High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) l Low leakage current	Original	2sk2602 sc-65	PDF
transistor 2sk2605 Abstract: 2sk2605 j3d marking Contextual Info: T O SH IB A 2SK2605 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2605 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rßg (ON)= 1-9^ (Typ.) tt: j.x ig_ln tti_	OCR Scan	2sk2605 s100//s j--25 --90v +3--27mh transistor 2sk2605 j3d marking	PDF
K2602 Abstract: transistor k2602 2SK2602 SC-65 Contextual Info: 2SK2602 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2602 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 0.9 Ω (typ.) High forward transfer admittance : \|Yfs\| = 5.5 S (typ.) Low leakage current	Original	2sk2602 k2602 transistor k2602 sc-65	PDF
K2602 Abstract: jeita sc-65 2SK2602 K2602 toshiba 2SK2602(F,T) Contextual Info: 2SK2602 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSⅤ 2SK2602 ○ スイッチングレギュレータ用単位: mm z オン抵抗が低い。 : RDS (ON) = 0.9Ω (標準) z 順方向伝達アドミタンスが高い。 : \|Yfs\| = 5.5S (標準)	Original	2sk2602 10vid sc-65 2-16c1b +5k2602 2002/95/ec jeita sc-65 k2602 toshiba 2sk2602(f,t	PDF

2SK260 Search Results

2SK260 Datasheets (66)

2SK260 Price and Stock

Toshiba America Electronic Components 2SK2605

Toshiba America Electronic Components 2SK2605(Q)

Toshiba America Electronic Components 2SK2604

Toshiba America Electronic Components 2SK2605QT

Toshiba America Electronic Components 2SK2608

2SK260 Datasheets Context Search

2-10P1B

K2608

K2606

K2602

K2601

K2607 TOSHIBA

K2607

K2604

K2601

2-10P1B

toshiba K2601

toshiba K2601

K2603

K2605

toshiba K2601

2-10P1B

k2605

2SK2602

2SK2602

transistor 2sk2605

K2602

K2602