2SK2608 Search Results

2-10P1B

Abstract: 2SK2608
Contextual Info: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • Low Drain-Sorce ON Resistance : Rd S (ON)“ 3.730 (Typ.)

K2608

Abstract: 2SK2608 2-10P1B
Contextual Info: 2SK2608 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅢ 2SK2608 ○ スイッチングレギュレータ用 単位: mm z オン抵抗が低い。 : RDS (ON) = 3.73Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 2.6 S (標準)

2-10P1B

Abstract: 2SK2608
Contextual Info: TOSHIBA 2SK2608 SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS Low Drain-Sorce ON Resistance : RßS (ON) = 3.73 ü, (Typ.) High Forward Transfer Admittance : |Yfs| = 2.6 S (Typ.)

2-10P1B

Abstract: 2SK2608
Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) l High forward transfer admittance : |Yfs|= 2.6 S (typ.) l Low leakage current

ED 3730

Contextual Info: TOSHIBA 2SK2608 SILICON N C H A N N E L M O S TYPE tt-M O S III SW ITCH IN G REGULATOR APPLICATIO NS INDUSTRIAL APPLICATIONS Unit in mm 03.6 + 0.2 • • • • * *1 Low Drain-Sorce ON Resistance : RDS (ON)= 3-730 (Typ.) High Forward Transfer Admittance : |Yfs| = 2.6S(Typ.)

2SK2608

Abstract: 2-10P1B
Contextual Info: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. • • • • 0 3 .6 1 0 . 2 Low Drain-Sorce O N Resistance : RdS (O N ) “ 3.730 (Typ.)

K2608

Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 High forward transfer admittance : |Yfs|= 2.6 S (typ.) (typ.) Low leakage current

Contextual Info: TOSHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm SWITCHING REGULATOR APPLICATIONS 10.3MAX. • Low Drain-Sorce ON Resistance

transistor k2608

Abstract: K2608 2sk2608
Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current

transistor k2608

Abstract: K2608 toshiba transistor k2608 2sk2608
Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : |Yfs|= 2.6 S (typ.) Low leakage current

K2608

Abstract: transistor k2608 2SK2608 equivalent 2-10P1B 2SK2608
Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) z High forward transfer admittance : |Yfs|= 2.6 S (typ.) z Low leakage current

2SK2608 equivalent

Abstract: 2SK2608 dr-3 Equivalent to 2SK2608 2-10P1B
Contextual Info: 2SK2608 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2608 Switching Regulator Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 3.73 Ω (typ.) High forward transfer admittance : |Yfs|= 2.6 S (typ.) Low leakage current

Contextual Info: TO SHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK26Q8 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS IN D U ST R IA L A PPLIC A TIO N S U nit in mm 10.3MAX. • Low Drain-Sorce ON Resistance

2SK2608

Contextual Info: TO SHIBA 2SK2608 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2608 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS SWITCHING REGULATOR APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. . 03.6 + 0.2 • • • • Low Drain-Sorce ON Resistance : Rd S (ON) = 3.73il (Typ.)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Contextual Info: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Contextual Info: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3