2SK2718 Search Results

2SK2718

Abstract: transistor 2sk2718
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

k2718

Abstract: transistor k2718
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

k2718

Abstract: transistor k2718
Contextual Info: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance

Contextual Info: 2SK2718 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 0 Í0 .3 : R d S ( 0N) = 5-6H (Typ.)

SS100 TRANSISTOR

Abstract: 2SK2718
Contextual Info: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance : R ßS (0 N )“ 5 .6 0 (Typ.)

transistor k2718

Abstract: K2718 transistor 2sk2718 2SK2718 2SK271
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

k2718

Abstract: transistor k2718 2SK2718 634 transistor
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SK2718(Q)

Contextual Info: TO SHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL MOS TYPE tt-MOSIII 2 7 1 8 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ± 0.3

k2718

Abstract: transistor k2718 transistor 2sk2718 2sk2718
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SK2718

Abstract: transistor 2sk2718
Contextual Info: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : |Yfs| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)

2SK2718

Abstract: 634 transistor
Contextual Info: TO SH IBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source UN Resistance : Rd S(ON) = 5.612 (Typ.)

transistor 2sk2718

Abstract: 2SK2718
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Contextual Info: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)

2SK3562

Abstract: 2SK3568 2SK2996 2SK3561 2SK3567 2SK3563 MRAM TO220-NIS 2SK2545 220SIS
Contextual Info: VOLUME 131 東芝半導体情報誌アイ 2003年6月号 CONTENTS 6 INFORMATION •大分に最先端システムLSI製造棟を建設 .P2 ■次世代携帯機器向けの 新しい小型SDメモリーカード .P2 ■1メガビットMRAMを開発 .P2

TA1343NG

Abstract: TB1318FG pal 011 A SPEAKER OUTPUT IC TC90A96BFG tmpa8859 Toshiba TMPA8873 TMPA8893 tmpa8873 TMPA8891 gt30f122
Contextual Info: システムカタログ システムカタログ TVソリューション 2007-5 デジタルテレビ・FPDテレビの構成 ● チューナ用IC デジタル放送 ● PIF/SIFシステム DRAM デジタル放送信号処理 ● 映像信号処理 伝送処理

2SK4207

Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

TPCA*8064

Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3