MRAM Search Results

MR25H10

Abstract: MR25H10C M25H1 MR25H10CDC M25H10 MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range

UT8MR8M8

Contextual Info: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet May 14, 2012 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times

UT8MR8M8

Abstract: aeroflex sram ecc
Contextual Info: Standard Products UT8MR8M8P 64Megabit Non-Volatile MRAM Advanced Data Sheet March 15, 2012 FEATURES  Single 3.3-V power supply  Fast 50ns read/write access time  Functionally compatible with traditional asynchronous SRAMs  Equal address and chip-enable access times

MR0A16A

Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
Contextual Info: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

MR2A16A

Abstract: MR2A16ATS35C
Contextual Info: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The

tsop 48 PIN type2

Abstract: 48BGA MR0A16AMA35
Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

0.35mm pitch BGA

Abstract: MR4A08BCYS35R MR4A08B MR4A08BC mr4a08bcys MR4A08BCYS35
Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Contextual Info: Standard Products UT8MR2M8 16Megabit Non-Volatile MRAM Data Sheet April 21, 2014 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply read/write  Fast 45ns read/write access time  Functionally compatible with traditional asynchronous SRAMs

Contextual Info: MEMORY MODULE MRAM 128Kx16-SOP 3DMR2M16VS2427 Magnetoresistive Ram MODULE 2 Mbit MRAM organized as 128Kx16 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Organized as 128Kx16. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access

Contextual Info: MEMORY MODULE MRAM 128Kx8-SOP 3DMR1M08VS1426 Magnetoresistive Ram MODULE 1 Mbit MRAM organized as 128Kx8 Pin Assignment Top View SOP 44 (Pitch : 0.80 mm) Features - Organized as 128Kx8. - Single +3.3V +/-0.3V power supply operation. - Symetrical high-speed read and write fast access

DQU12

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures

Contextual Info: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

Contextual Info: MR4A08B FEATURES 2M x 8 MRAM Memory • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 packages

Contextual Info: MR25H256 256Kb Serial SPI MRAM FEATURES • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

mr25h40

Abstract: 25H40 SPECIFICATIONS10 sck 053
Contextual Info: MR25H40 FEATURES 4Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 3.0 to 3.6 Volt power supply range

mr25h40

Contextual Info: MR25H40 FEATURES 4Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 3.0 to 3.6 Volt power supply range

Contextual Info: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature

Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Block write protection • Fast, simple SPI interface with up to 40 MHz clock rate

BGA OUTLINE DRAWING

Abstract: mr4a16bmys351
Contextual Info: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package

2227V

Contextual Info: MR256D08B Dual Supply 32K x 8 MRAM FEATURES • +3.3 Volt power supply • I/O Voltage range supports wide +1.65 to +3.6 Volt interfaces • Fast 45 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature

MRAM

Abstract: BBSRAM MR2A16A honeywell memory sram
Contextual Info: MRAM Fact Sheet Overview Freescale’s magnetoresistive random access memory MRAM is a revolutionary memory technology that can replace many of today’s semiconductor memory technologies. MRAM combines the speed of SRAM and the non-volatility of flash onto a single chip.

gaussmeter

Abstract: Tunneling Magnetoresistance MR2A16A
Contextual Info: Technical Guide MRAM Overview Freescale’s magnetoresistive random access memory MRAM technology combines a magnetic device with standard silicon-based microelectronics to obtain the collective attributes of non-volatility, high-speed operation and unlimited read and write endurance, a

MR0A08B

Abstract: MR0A08BCYS35R MRAM MR0A08BCMA35 TSOP-48 FOOTPRINT 48BGA
Contextual Info: MR0A08B 128Kx8 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System

Contextual Info: Standard Products UT8MR2M8 16Megabit Non-Volatile MRAM Preliminary Data Sheet December 11, 2012 www.aeroflex.com/memories FEATURES  Single 3.3-V power supply  Fast 40ns read/write access time  Functionally compatible with traditional asynchronous