2SK271 Search Results

K2717

Abstract: transistor k2717
Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)

2SK2710

Contextual Info: 2SK2710 External dimensions 2 . FM100 Absolute Maximum Ratings Electrical Characteristics Ta = 25ºC Symbol Ratings Unit Symbol VDSS 600 V V(BR) DSS I D = 100µA, VGS = 0V nA VGS = ±30V I DSS 100 µA VDS = 600V, VGS = 0V A VTH 2.0 3.0 ±48 A Re (yfs)

2SK2719

Abstract: SC-65 OR1 marking 400VY
Contextual Info: 2SK2719 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2719 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS tt-MOSIII INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • Low Drain-Sorce ON Resistance : Rd S (ON) —3.70 (Typ.)

2sk2717

Abstract: DIODE 436
Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs| = 4.4 S (typ.)

Contextual Info: TOSHIBA 2SK2719 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2719 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance

2SK2713

Contextual Info: Transistors Switching 450V, 5A 2SK2713 • Features •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 3) W ide SOA (safe operating area). 4) G ate-so urce v o lta g e g u ara ntee d at Vgss = + 30V . 5) Easily designed drive circuits.

2SK2718

Abstract: transistor 2sk2718
Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.)

Mosfet FTR 03-E

Contextual Info: Transistors Switching 500V, 10A 2SK2714 • F e a tu re s ►External dim ensions (Units: mm) 1 ) Low on-resistance. 2) ,+ 0 .3 1 - 0.1 High-speed switching. As+0-3 0.1 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e g u ara ntee d at V gss = ± 3 0 V .

Contextual Info: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s •E x te rn a l dimensions (Units: mm) 1) Low on-resistance. 2) High-speed switching. 2 3) Wide SOA (safe operating area). 4) Gate-source voltage guaranteed at Vgss = ±30V . o +0.2 0.1 — 0.5±0.1

2SK2719

Abstract: SC-65
Contextual Info: TO SH IBA 2SK2719 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2719 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance

Contextual Info: 2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIII 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.7 • High forward transfer admittance: |Yfs| = 2.6 S (typ.)

transistor k2717

Abstract: K2717 2SK2717 TRANSISTOR MAKING
Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)

Contextual Info: Transistors Small switching 500V, 2A 2SK2715 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA (safe operating area). 4) G ate-source voltage guaranteed at V gss = ± 3 0 V . •E x te rn a l dimensions (Units: mm) 5) Easily designed drive circuits.

2SK2719

Abstract: SC-65 B3202
Contextual Info: TOSHIBA 2SK2719 TOSHIBA FIELD EFFECT TRANSISTOR CHOPPER REGULATOR, APPLICATIONS SILICON N CHANNEL MOS TYPE tt-M OSIII 2SK2719 DC-DC CONVERTER AN D MOTOR DRIVE Unit in mm b 3 .2 ± 0.2 • Low Drain-Sorce ON Resistance : RßS (ON) = 3.7 Ci (Typ.) • High Forward Transfer Admittance : |Yfs| = 2.6 S (Typ.)

mosfet ftr 03

Abstract: 2SK2711 SC-75A mosfet 2sk* to-92 oc sc-62 mosfet
Contextual Info: Transistors Switching 250V, 16A 2SK2711 •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. , 5 + o .a 4 . 5 - 0 ., 10.0+23 2) High-speed switching. „+0.2 •8—0.1 3) W ide SOA (safe operating area). 4) G a te-so urce v o lta g e g u ara ntee d

S1998

Contextual Info: TO SHIBA 2SK2719 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2719 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance

UEI 410

Abstract: 2SK2715
Contextual Info: Transistors Small switching 500V, 2A 2SK2715 • Features • E x te rn a l dim ensions (Units: mm) 1 ) Low on-resistance. 2) High-speed switching. 6.5±0.2 5 1+02 r i, f V 3) W ide SOA (safe operating area). 4) G a te -so u rce vo lta g e guara ntee d at Voss = ± 3 0 V .

2SK2711

Contextual Info: Transistors Switching 250V, 16A 2SK2711 • F e a tu re s • E x te rn a l dim en sion s (Units: mm) 1 ) Low on-resistance. 0 + 0 .3 2) H igh-speed switching. c + 0 .3 &~0.t ü - 0 .1 3) W ide S O A (safe operating area). ¿ 3 .2 ± 0 .2 4) G a te -s o u rc e v o lta g e g u a ra n te e d

Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs| = 4.4 S (typ.)

2SK2715

Abstract: 500V2a parallel mosfet 500v 2A mosfet
Contextual Info: Transistors Switching 500V, 2A 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure

2SK2540

Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Contextual Info: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )

transistor k2717

Abstract: K2717 K2717 POWER TRANSISTOR k2717 equivalent 2SK2717
Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) High forward transfer admittance : |Yfs| = 4.4 S (typ.)

K2717

Abstract: transistor k2717 k2717 equivalent 2SK2717 K2717 POWER TRANSISTOR
Contextual Info: 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2717 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) z High forward transfer admittance : |Yfs| = 4.4 S (typ.)

Contextual Info: T O SH IB A 2SK2719 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE tt-M O S H I mH MF • ■». m • INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH VOLTAGE SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS