2SK2601 Search Results

K2601

Abstract: 2SK2601 SC-65
Contextual Info: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS

K2601

Abstract: 2SK2601 SC-65
Contextual Info: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 ^ Q MAY •

toshiba K2601

Abstract: K2601 toshiba transistor k2601 2SK2601 SC-65 toshiba 2-16c1b
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

toshiba K2601

Abstract: K2601 jeita sc-65 2SK2601
Contextual Info: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.56 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)

toshiba K2601

Abstract: K2601 toshiba transistor k2601
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

toshiba K2601

Abstract: toshiba transistor k2601 K2601 2SK2601 SC-65
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

2SK2601

Abstract: SC-65
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications l Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) l High forward transfer admittance : |Yfs| = 7.0 S (typ.)

Contextual Info: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M A X.

toshiba transistor k2601

Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type −MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON-resistance : RDS (ON) = 0.56 High forward transfer admittance : |Yfs| = 7.0 S (typ.) Unit: mm

Contextual Info: TOSHIBA 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M O S TYPE tt-M O S V 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE A N D M O TOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

K2601

Abstract: toshiba K2601 toshiba K2601 datasheet toshiba transistor k2601 2SK2601 SC-65
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

2SK2601

Abstract: SC-65
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)

K2601

Abstract: toshiba K2601 datasheet toshiba K2601 toshiba transistor k2601 2SK2601 SC-65
Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)

K2601

Abstract: toshiba K2601 2SK2601 jeita sc-65
Contextual Info: 2SK2601 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2601 ○ スイッチングレギュレータ 単位: mm z オン抵抗が低い。 : RDS (ON) = 0.75 Ω (標準) z 順方向伝達アドミタンスが高い。 : |Yfs| = 7.0 S (標準)

2SK2601

Abstract: SC-65
Contextual Info: T O S H IB A 2SK2601 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2601 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

Contextual Info: 2SK2601 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2601 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 0.56 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.0 S (typ.)

5252 F 1009 4-pin

Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4

Toshiba TMPA8873

Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
Contextual Info: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

STR-G6551

Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision

MOSFET TOSHIBA 2SK2917

Abstract: 2sK2750 equivalent 2sk2997 2SK3759 2SJ618 2sk3067 2SK3767 2SK2842 equivalent 2SK2837 equivalent 2SK2843 equivalent
Contextual Info: Power MOSFET High Voltage:more than 150V Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540004_01 1/16 Trend of High Speed and High Voltage Power MOSFETs R D S (ON )* Q s w ( O h m * n C) 8 VDSS=200V RDS(ON)@VGS=10V 6

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

GT30F131

Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SK3878 equivalent

Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)