4AK16 Search Results

2SK974S

Abstract: Hitachi DSA002759
Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on ≤ 0.18 Ω, VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 Ω, VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching

Hitachi DSA002787

Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance RDS on ≤ 0.18 Ω, VGS = 10 V, ID = 5 A RDS(on) ≤ 0.25 Ω, VGS = 4 V, ID = 5 A • • • • • Capable of 4 V gate drive Low drive current

2SK970

Abstract: diode 50v 5A 2SK974 2SK1093 4AK16 SP-10 2sk109
Contextual Info: HITACHI 4AK16 SILIC O N N-CHANNEL P O W E R M O S F E T A RRA Y HIGH S P E E D P O W E R SW ITCH ING • FEATURES I • Low On-Resistance Ros on ^ 0.18 Í1 , = 10 V, ln = 5 A R ds (on) ^ 0.25 £2 , VGS = 4 V, l0 = 5 A • Capable of 4 V Gale Drive • Low Drive Current

4AK16

Abstract: SP-10 Hitachi DSA00395
Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching

4AK16

Abstract: SP-10 DSA003638
Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array ADE-208-1201 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.18 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.25 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive

Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array HITACHI Application H ig h speed pow er switching Features • L o w on-resistance RDSlin < 0 . l 8 O , V GS= I 0 V , I D= 5 A R DS „n)< 0 .2 5 a , V 0S = 4 V , I d = 5 A • Capable o f 4 V gate drive • L o w drive current

Hitachi DSA002751

Contextual Info: 4AK16 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance RDS on ≤ 0.18 Ω, VGS = 10 V, ID = 5 A RDS(on) ≤ 0.25 Ω, VGS = 4 V, ID = 5 A • Capable of 4 V gate drive • Low drive current

Contextual Info: 4AK16 blE D IHIT4 HITACHI/ OPTOELECTRONICS S ILIC O N N -C H A N N EL P O W ER M O S F E T ARRAY 26 5 ± 0 3 HIGH SPEED POWER SW ITCHING • FEATURES • Low On-Resistance RDS (° n) — °-18 • Capable of 4 V Gate Drive • Low Drive Current • High Speed Switching

2SK1275

Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1778

Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

FHX04FA

Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
Contextual Info: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop

2SK975 equivalent

Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
Contextual Info: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SK1778

Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

4AK16

Abstract: SP-10
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SH14

Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
Contextual Info: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching