2SK1 Search Results

Contextual Info: TO SHIBA 2SK1359 Field Effect Transistor U nit in m m Silicon N Channel MOS Type tc-MOS 11.5 15.9MAX High Speed, High Current DC-DC Converter, 032±O2 & Relay Drive and Motor Drive Applications Features • Low Drain-Source ON Resistance cJ " Rds(ON) = 3-OQ (Typ.)

2SK161

Abstract: 2SK161GR vI652
Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK161 U nit in mm FM TU N ER A P P LIC A T IO N S . VH F B A N D A M P LIF IE R A PP LIC A T IO N S . Low Noise Figure • • : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admittance : |Yfs| = 9mS (Typ.)

Contextual Info: TOSHIBA 2SK1486 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII .5 2 S K 1 486 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 20.5MAX.

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

2SK1357

Abstract: 2Sk1357 transistor
Contextual Info: 2SK1357 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE jt-MOS h -5 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. 1 5.9 MAX. *3.2±0 2 FEATURES: • Low Drain-Source ON Resistance : RDS(0N)=2.5Q (Typ.) •High Forward Transfer Admittance : I Y f s ! = 2. 0S( Typ. )

2SK1928

Contextual Info: TOSHIBA 2SK1928 Field Effect Transistor Industrial Applications Unit in mm Silicon N Channel MOS Type rc-MOS II h iZ . High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - RiD S (O N ) = 0.7Q [Typ.) • High Forward Transfer Admittance

transistor 2SK1120

Abstract: CL226 2SK1120
Contextual Info: TOSHIBA 2SK1120 Field Effect Transistor Industrial Applications Unit in m m Silicon N Channel MOS Type rc-MOS II High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

800v nmos

Contextual Info: TOSHIBA 2SK1365 Field Effect Transistor Unit in mm Silicon N Channel MOS Type n-MOS 11.5 High Speed, High Current Switching Applications Features • Low Drain-Source ON Resistance - Rds(on ) = 1 (Typ.) • High Forward Transfer Admittance - Yfs' = 4. OS (Typ.)

2SK1118

Abstract: 2SK1513 TO-3P 2SK1723 2SK790 p-channel fet to-220
Contextual Info: Power MOS FET tc-MOS Application Type No. N-CHANNEL P-CHANNEL 2SJ200 2SJ201 Audio Power Amp. 2SK1529 2SK1530 2SK357 2SK358 2SK525 2SK526 2SK532 DC/DC Converter 2SK387 Motor Driver 2SK3B8 2SK572 2SK578 2SK573 2SK447 2SK1641 2SK945 2SK528 2SK529 2SK530 2SK531

Contextual Info: T O SH IB A _ 2SK1544 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SIII-5 2 S K 1 5 4 4 INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.

2SK1380

Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1380 H I GH S P E E D , H I G H CURRENT SWI TCHING A P P L I C A T I O N S . INDUSTRIAL APPLICATIONS R E L A Y D R I V E , M O T O R D RI VE AND DC-DC C ONV ER T ER A P P L I C A T I O N S .

Contextual Info: TOSHIBA 2SK1382 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-7r-MOSIII 2 S K 1 382 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS • • • • • INDUSTRIAL APPLICATIONS Unit in mm 4V Gate Drive

2SK1377

Abstract: 10R1B
Contextual Info: 2SK1377 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E tt-MOS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 1Û3MAX. 0 1 2 ± d 2 /- FEATURES:

2SK1346

Contextual Info: FIELD EFFECT TRANSISTOR 2SK1346 SILICON N CHANNEL MOS TYPE tt-MOSH INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPL1CAÍI0NS. Unit in ma CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES: • Low Drain-Source ON Resistance :

Contextual Info: 2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications • Superior inter modulation performance. • Low noise figure: NF = 1.0dB typ. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

nsi 60 jg

Contextual Info: T O SH IB A 2SK1119 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O S II-5 2 S K 1 119 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. • • • • INDUSTRIAL APPLICATIONS U n it in mm

transistor smd marking NE

Abstract: transistor smd marking 107 MARKING NE smd marking NE 107 10V smd smd NE 2SK1585
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK1585 SOT-89 Unit: mm +0.1 4.50-0.1 Features +0.1 1.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Has low on-state resistance 1 RDS on =1.0 MAX.@VGS=4.0V,ID=0.5A 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1

2sk1464

Contextual Info: 2SK1464 2076 U H U ltra h ig h V o lta g e S eries V Ds s = 900V N Channel Power M O S F E T • f'3467 F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A bso lu te M axim um R a tin g s at Ta = 25°C Drain to Source Voltage

2sk 2056

Contextual Info: 2SK1448 AP A d v a n c e d P e rfo rm a n c e Series V dss = 4 5 0 V 2056 N Channel Power M OSFET F eatu res • Low ON-state resistance. • Very high-speed Switching. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

Contextual Info: 2SK1437 A P A d v a n c e d P e r f o r m a n c e S e rie s 2077 VDSS= 1 0 0 V N Channel Power M O S F E T F e a tu re s • Low ON-state resistance. • Very high-speed switching. • Converters. A b so lu te M axim um R atin g s at Ta - 25°C Drain to Source Voltage

2SK1725

Contextual Info: 2SK1725 LD L o w D rive S eries V DSs = 3 0 V 2 08 7 N Channel Power M OSFET Features •Low ON resistance. • Very high-speed switching. • Low-voltage drive. ■M eets radial taping. b s o lu te M ax im u m R a tin g s a t T a = 25°C D rain to Source Voltage

2SK152

Abstract: 2SK152 Sony 2sk152 equivalent
Contextual Info: 2SK152 SONY. Silicon N-Channel Junction FET Package Outline Description The 2SK152 is the first device to reach such a high "Figure of merit" level. Because it uses the latest Epitaxy and Pattern technology. Head amplifiers Video Cameras VTRs etc. per­ form very efficiently.

Contextual Info: 2SK1472 2083A LD L o w D rive S eries V Dss — 6 0 V 2092A N Channel Power M OS F ET F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A b so lu te M ax im u m R a tin g s a tT a = 25°C D rain to Source Voltage V dss

Contextual Info: 2SK1724 LD L o w D rive S eries 2062 V 0 ss —3 0 V N Channel Power M OSFET E.3BI9 F e a tu re s •Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atin g s at Ta = 25°C Drain to Source Voltage V d ss Gate to Source Voltage